Semiconductor device
View Patent ↗The present invention provides a technique which, without causing two problems, i.e., (1) increased number of power supply/grounding pins and (2) increased power feed line inductance, prevents the noise causing a problem in a control circuit, from becoming routed around and induced into an output buffer. More specifically, the above can be realized by using either of two methods: (A) providing an on-chip bypass capacitor for the control circuit and isolating a power feed route of the control circuit from that of the output buffer in an AC-like manner, or (B) designing electrical parameters (inserting resistors) such that the oscillation mode of any electrical parameter noise induced into the power feed routes will change to overdamping.
1. A semiconductor device including a semiconductor chip and a substrate, said semiconductor chip including an output circuit and a control circuit, said semiconductor chip being mounted on said substrate, said semiconductor device comprising:
a first electrode section provided on said substrate, said first electrode section having a power supply potential;
a first connection terminal formed on said semiconductor chip, said first connection terminal being connected to a power supply potential terminal of said output circuit;
a second electrode section provided on said substrate, said second electrode section having a grounding potential;
a second connection terminal formed on said semiconductor chip, said second connection terminal being connected to a grounding potential terminal of said output circuit; and
an on-chip bypass capacitor connected between said first and second connection terminals, said capacitor being provided at a position where it serves as a bypass for said output circuit;
wherein, when
an inductance value of a power feed line provided on said substrate in order to feed power to said semiconductor chip is taken as “L pkq ”,
a capacitance value that said on-chip bypass capacitor possesses is taken as “C dec ”, and
the total resistance value obtained by totaling a resistance value of the wiring provided on a route leading from said first electrode section through said on-chip bypass capacitor to said second electrode section, and a resistance value of a resistor independently provided on the way of the wiring route, is taken as “R pg ”,
said resistor that satisfies the following (Expression 1) is provided between said first connection terminal and said first electrode section and between said second connection terminal and said second electrode section:
R
pg
≥
2
L
pkg
C
dec
.
(
Expression
1
)
2. A semiconductor device including a semiconductor chip and a substrate, said semiconductor chip including an output circuit and a control circuit, said semiconductor chip being mounted on said substrate, said semiconductor device comprising:
a first electrode section provided on said substrate, said first electrode section having a power supply potential;
a first connection terminal formed on said semiconductor chip, said first connection terminal being connected to a power supply potential terminal of said output circuit;
a second electrode section provided on said substrate, said second electrode section having a grounding potential;
a second connection terminal formed on said semiconductor chip, said second connection terminal being connected to a grounding potential terminal of said output circuit; and
an on-chip bypass capacitor connected between said first and second connection terminals, said capacitor being provided at a position where it serves as a bypass for said output circuit;
wherein, when
an inductance value of a power feed line provided on said substrate in order to feed power to said semiconductor chip is taken as “L pkg ”,
a capacitance value that said on-chip bypass capacitor possesses is taken as “C dec ”, and
the total resistance value obtained by totaling a resistance value of the wiring provided on a route leading from said first electrode section through said on-chip bypass capacitor to said second electrode section, and a resistance value of a resistor independently provided on the way of the wiring route, is taken as “R pg ”,
said resistor that satisfies the following (Expression 1) is provided at said first electrode section and said second electrode section:
R
pg
≥
2
L
pkg
C
dec
.
(
Expression
1
)