Temperature-compensated resistor and fabrication method therefor
View Patent ↗A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration is formed, and is selected from an enlarged transverse portion in the resistor element intermediate and spaced from the terminal contacts, and at least one contact pattern along and in contact with the resistor element intermediate and spaced from the terminal contacts.
1. A method of forming a temperature-compensated resistor, comprising:
forming a resistor on a semiconductor substrate;
forming terminal contacts on the ends of the resistor; and
forming at least first and second temperature-compensating elements at least one on and in the resistor, the first element comprising an enlarged transverse portion in the resistor element intermediate and spaced from the terminal contacts, the first element having an epi thermal resistance associated therewith proportional to a coefficient of resistivity ρ e , the second element comprising at least one contact pattern disposed along and in contact with the resistor, and intermediate and spaced from the terminal contacts; the second element having a contact thermal resistance associated therewith proportional to a coefficient of resistivity ρ c ;
wherein the first and second elements are configured to at least partially offset the respective epi and contact resistances associated therewith as a temperature of the resistor changes.
2. The method of claim 1 , wherein forming the resistor further comprises forming a plurality of the contact patterns disposed along and in contact with the resistor, and intermediate and spaced from the terminal contacts.
3. The method of claim 1 , wherein forming the resistor further comprises forming a plurality of the enlarged transverse portions in the resistor intermediate and spaced from the terminal contacts.
4. The method of claim 1 , wherein forming a the resistor further comprises forming an epitaxial resistor.
5. The method of claim 1 , wherein the semiconductor substrate is a gallium arsenide substrate and the resistor is an epitaxial resistor formed in a gallium arsenide process.
6. A method of forming a temperature-compensated resistor, comprising:
in a gallium arsenide process on a gallium arsenide semiconductor substrate, forming the resistor;
forming metallic terminal contacts on ends of the resistor;
forming at least first and second temperature-compensating elements at least one of on and in the resistor, the first element comprising an enlarged transverse portion in the resistor intermediate and spaced from the metallic terminal contacts, the first element having an epi thermal resistance associated therewith proportional to a coefficient of resistivity ρ e , the second element comprising at least one metallic contact pattern disposed along and in contact with the resistor element, and intermediate and spaced from the metallic terminal contacts, the second element having a contact thermal resistance associated therewith proportional to a coefficient of resistivity ρ c ;
wherein the first and second elements are configured to at least partially offset the respective epi and contact resistances associated therewith as a temperature of the resistor changes.
7. The method of claim 6 , wherein forming the resistor further comprises forming a plurality of enlarged transverse portions in the resistor intermediate and spaced from the metallic terminal contacts.
8. The method of claim 6 , wherein forming the resistor further comprises forming a plurality of metallic contact patterns along and in contact with the resistor, and intermediate and spaced from the metallic terminal contacts.
9. The method of claim 6 , wherein forming a the resistor further comprises forming an epitaxial resistor.
10. A temperature-compensated resistor, comprising:
a resistor disposed on a semiconductor substrate;
terminal contacts disposed on ends of the resistor; and
at least first and second temperature-compensating elements disposed at least one of on and in the resistor, the first element comprising an enlarged transverse portion in the resistor intermediate and spaced from the terminal contacts, the first element having an epi thermal resistance associated therewith proportional to a coefficient of resistivity ρ e , the second element comprising at least one contact pattern disposed along and in contact with the resistor, and intermediate and spaced from the terminal contacts the second element having a contact thermal resistance associated therewith proportional to a coefficient of resistivity ρ c ;
wherein the first and second elements are configured to at least partially offset the respective epi and contact resistances associated therewith as a temperature of the resistor changes.
11. The resistor of claim 10 , wherein the temperature-compensating resistor further comprises a plurality of enlarged transverse portions in the resistor intermediate and spaced from the terminal contacts.
12. The resistor of claim 10 , wherein the temperature-compensating resistor further comprises a plurality of contact patterns disposed along and in contact with the resistor element, and intermediate and spaced from the terminal contacts.
13. The resistor of claim 10 , wherein the resistor further comprises an epitaxial resistor.
14. The resistor of claim 10 , wherein the semiconductor substrate is a gallium arsenide substrate and the resistor is an epitaxial resistor formed in a gallium arsenide process.