Flip-chip packaged SMD-type LED with antistatic function and having no wire bonding
View Patent ↗A flip-chip packaged SMD-type (surface-mount device) light emitting diode is provided. The light emitting diode chip is packaged in flip chip packages and is connected with an electrostatic protection device such as a transient voltage suppressor (TVS) or a Zener diode. The electrostatic protection device is attached with a substrate so as to form a flip-chip packaged SMD-type light emitting diode. The light emitting diode chip is connected to a lead frame of the substrate by a high electrical and heat conductive component thus the device needs no wire bonding. Due to the electrostatic protection device, the device has static control effect.
1. A flip-chip packaged surface-mounted device light emitting diode with antistatic function and having no wire bonding comprising
a high electrical and heat conductive base substrate with a first lead frame and a second lead frame;
an electrostatic protection device having a first p-type electrode and a first n-type electrode while said first n-type electrode is connected with said first lead frame;
a light emitting diode having a second p-type electrode, a second n-type electrode and a third n-type electrode;
said second p-type electrode is connected with said first n-type electrode of said electrostatic protection device and said second n-type electrode is connected with said first p-type electrode; and
a high electrical and heat conductive component connected with said second lead frame and said third n-type electrode of said light emitting diode.
2. The device according to claim 1 , wherein said electrostatic protection device is a Zener diode.
3. The device according to claim 1 , wherein said first p-type electrode and said first n-type electrode are disposed on the same side.
4. The device according to claim 1 , wherein said second p-type electrode, said second n-type electrode and said third n-type electrode are disposed on the same side while said second n-type electrode is disposed apart from said third n-type electrode.
5. The device according to claim 1 , wherein said light emitting diode is a light-emitting gallium nitride-based III–V group compound semiconductor device.
6. The device according to claim 1 , wherein said light emitting diode is connected with said electrostatic protection device by a solder or a bump.
7. The device according to claim 1 , wherein said first lead frame is connected with said electrostatic protection device by high conductive paste.
8. The device according to claim 1 , wherein said third electrode is connected with said high electrical and heat conductive component by a solder or a bump.
9. The device according to claim 1 , wherein said high electrical and heat conductive component is connected with said second lead frame by high conductive paste.
10. A flip-chip packaged surface-mounted device light emitting diode with antistatic function and having no wire bonding comprising
a high electrical and heat conductive base substrate with a first lead frame and a second lead frame;
an electrostatic protection device having a first p-type electrode, a second p-type electrode and a first n-type electrode while said first n-type electrode is connected with said first lead frame;
a light emitting diode having a third p-type electrode, a second n-type electrode and a third n-type electrode; said third p-type electrode is connected with said second p-type electrode of said electrostatic protection device and said second n-type electrode is connected with said first p-type electrode; and
a high electrical and heat conductive component connected with said second lead frame and said third n-type electrode of said light emitting diode.
11. The device according to claim 10 , wherein said electrostatic protection device is a transient voltage suppressor (TVS).
12. The device according to claim 10 , wherein said first p-type electrode, said second p-type electrode and said first n-type electrode are disposed on the same side.
13. The device according to claim 10 , wherein said third p-type electrode, said second n-type electrode and said third n-type electrode are disposed on the same side while said second n-type electrode is arranged apart from said third n-type electrode.
14. The device according to claim 10 , wherein said light emitting diode is a light-emitting gallium nitride-based III–V group compound semiconductor device.
15. The device according to claim 10 , wherein said light emitting diode is connected with said electrostatic protection device by a solder or a bump.
16. The device according to claim 10 , wherein said first lead frame is connected with said electrostatic protection device by high conductive paste.
17. The device according to claim 10 , wherein said third electrode is connected with said high electrical and heat conductive component by a solder or a bump.
18. The device according to claim 10 , wherein said high electrical and heat conductive component is connected with said second lead frame by high conductive paste.
19. A flip-chip packaged surface-mounted device light emitting diode with antistatic function and having no wire bonding comprising
an electrical and heat conductive base substrate with a first lead frame and a second lead frame;
an electrostatic protection device connected with said first lead frame;
a light emitting diode connected with said electrostatic protection device; and
a high electrical and heat conductive component connected with said second lead frame and said light emitting diode.
20. The device according to claim 19 , wherein said electrostatic protection device is a transient voltage suppressor (TVS).
21. The device according to claim 19 , wherein said electrostatic protection device is a Zener diode.
22. The device according to claim 19 , wherein said electrostatic protection device having a first p-type electrode and a first n-type electrode.
23. The device according to claim 19 , wherein said electrostatic protection device having a first p-type electrode, a second p-type electrode and a first n-type electrode.
24. The device according to claim 19 , wherein said first n-type electrode is connected with said first lead frame.
25. The device according to claim 23 , wherein said first n-type electrode is connected with said first lead frame.
26. The device according to claim 22 , wherein said first p-type electrode and said first n-type electrode are disposed on the same side.
27. The device according to claim 23 , wherein said first p-type electrode, said second p-type electrode and said first n-type electrode are disposed on the same side.
28. The device according to claim 19 , wherein said light emitting diode having a second p-type electrode, a second n-type electrode and a third n-type electrode.
29. The device according to claim 19 , wherein said light emitting diode having a third p-type electrode, a second n-type electrode and a third n-type electrode.
30. The device according to claim 28 , wherein said second p-type electrode, said second n-type electrode and said third n-type electrode are disposed on the same side while said second n-type electrode is disposed apart from said third n-type electrode.
31. he device according to claim 29 , wherein said third p-type electrode, said second n-type electrode and said third n-type electrode are disposed on the same side while said second n-type electrode is disposed apart from said third n-type electrode.
32. The device according to claim 19 , wherein said light emitting diode is a light-emitting gallium nitride-based III–V group compound semiconductor device.
33. The device according to claim 19 , wherein said light emitting diode is connected with said electrostatic protection device by a solder or a bump.
34. The device according to claim 19 , wherein said first lead frame is connected with said electrostatic protection device by high conductive paste.
35. The device according to claim 19 , wherein said high electrical and heat conductive component is connected with said second lead frame by high conductive paste.