Method for measuring VCSEL reverse bias leakage in an optical module
View Patent ↗Reverse bias leakage testing may be used to determine the health of a vertical cavity surface emitting laser (VCSEL). When VCSELs are integrated on a die with other electronic devices such testing may damage the other electronic devices or be prohibited by circuits on the die designed to protect the electronics from being reverse biased. Accordingly, reverse bias testing may be facilitated by providing a second ground pad, separate from the die ground pad, specific to the VCSEL.
1. An apparatus comprising:
a module;
at least one electronic device integral with the module;
at least one optoelectronic device integral with the module;
a common voltage source pad for the electronic and optoelectronic devices;
a first ground pad for the at least one electronic device;
a second ground pad, separate from the first ground pad, for the at least one optoelectronic device; and
one of a diode and a resistor between an anode of the at least one optoelectronic device and the common voltage source pad.
2. An apparatus comprising;
a module;
at least one electronic device integral with the module;
at least one optoelectronic device integral with the module;
a common voltage source pad for the electronic and optoelectronic devices;
a first ground pad for the at least one electronic device;
a second ground pad, separate from the first around pad, for the at least one optoelectronic device;
voltage source to apply a reverse bias voltage between the second ground pad and the common voltage source pad; and
a current meter in a path between the second ground pad and the common voltage source pad.
3. An apparatus comprising:
a module;
at least one electronic device integral with the module;
at least one optoelectronic device integral with the module;
a common voltage source pad for the electronic and optoelectronic devices;
a first ground pad for the at least one electronic device;
a second ground pad, separate from the first ground pad, for the at least one optoelectronic device, wherein the at least one optoelectronic device comprises a vertical cavity surface emitting laser (VCSEL);
a plurality of the modules on a substrate to form a parallel optics module; and
a plurality of individual VCSEL grounds, one for each of said plurality o modules.
4. The apparatus as recited in claim 3 further comprising VCSEL driver circuitry and transmitter circuitry on said substrate.
5. A method comprising:
integrating an electronic device and an optoelectronic device on a die;
providing a common voltage source pad for all devices on the die;
providing a first ground pad for the electronic device;
providing a second ground pad, separate for the first ground pad, for the optoelectronic device, wherein the optoelectronic device comprises a vertical cavity surface emitting laser (VCSEL); and
providing a reverse bias voltage between the common voltage source pad and the second ground pad.
6. The method as recited in claim 5 further comprising:
measuring a reverse bas current flowing through the VCSEL to determine electrostatic discharge (ESO) damage.
7. A system, comprising:
a parallel optics module comprising a plurality of singulated dies each comprising integrated electronic components and optoelectronic components positioned on a substrate;
a common voltage supply pad to supply voltage to each said die;
a common ground pad to ground said electronic components on each said die;
at least one optoelectronic ground pad, separate from the common ground pad;
a plurality of input ports for inputting signals to the parallel optics module;
a plurality of output ports to output signals from the parallel optics module;
a processor to control routing of signals from the input ports and output ports through the parallel optics module wherein the optoelectronic components comprise vertical cavity surface emitting lasers (VCSELs); and
a voltage source to apply a reverse bias voltage between the at least one optoelectronic ground pad and the common voltage source pad.
8. The system as recited in claim 7 further comprising a current meter between the at least one optoelectronic ground pad and the common voltage source pad to detect a leakage current a corresponding VCSEL.