Method for manufacturing MOS transistor and semiconductor device employing MOS transistor made using the same
View Patent ↗A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolation oxidation film such that the isolation oxidation film is left remaining only over a field oxidation film; heat treating the semiconductor substrate to form silicide by the metal thin film in gate, source, and drain regions; removing portions of the metal thin film that is not formed into silicide, that is, removing unreacted metal thin film; removing the isolation oxidation film left remaining on the field oxidation film; and heat treating the semiconductor substrate in an oxygen environment to form the unreacted metal thin film remaining on the field oxidation film into a metal oxidation film. The present invention is related also to a semiconductor device that employs a metal-oxide-semiconductor transistor made using the method.
1. A semiconductor device, comprising:
a semiconductor substrate having a device separation region formed by a field oxidation film;
a metal-oxide-semiconductor transistor including a gate, a source, and a drain, the metal-oxide-semiconductor transistor being provided in a device region of the semiconductor substrate;
an insulating film formed on the semiconductor substrate and including contact holes that expose portions of the gate, source, and drain;
silicide formed on the metal-oxide-semiconductor transistor to reduce contact resistances of the gate, source, and drain;
a liner film formed over the gate and filed oxidation film; and
a metal oxidation film formed between the filed oxidation film and the liner film.
2. The semiconductor device of claim 1 , wherein the silicide is formed of a metal such as titanium and cobalt.
3. The semiconductor device of claim 2 , wherein the silicide is formed to a thickness of about 300 to 500 Å.
4. The semiconductor device of claim 1 , wherein the metal oxidation film is formed of a metal such as titanium and cobalt.
5. The semiconductor device of claim 4 , wherein the metal oxidation film is formed to a thickness of about 300 to 500 Å.
6. The semiconductor device of claim 1 , wherein the liner film is a silicon nitride film, and the liner film is formed to a thickness of about 200 to 400 Å.