Semiconductor substrate and semiconductor device using the same
View Patent ↗A semiconductor substrate used for fabricating vertical devices, such as vertical MOSFET, capable of maintaining low ON-stage resistance and of ensuring a necessary level of OFF-stage breakdown voltage is provided. A heavily-doped arsenic layer of 0.5 to 3.0 μm thick is inserted between a heavily-doped phosphorus layer 11 composing the drain of a vertical MOSFET and an n − -type drift layer. The heavily-doped arsenic layer functions as a barrier layer which prevents phosphorus from diffusing from the heavily-doped phosphorus layer into the n − -type drift layer. This is successful in maintaining spreading of the depletion layer during OFF time of the vertical MOSFET to thereby improve the OFF-stage breakdown voltage, and in maintaining the low ON-stage resistance.
1. A semiconductor substrate comprising:
a first silicon layer containing phosphorus as an impurity with a first concentration;
a second silicon layer formed on said first silicon layer and containing an n-type impurity with a second concentration lower than said first concentration; and
a third silicon layer containing an n-type impurity with a third concentration, being disposed between said first silicon layer and said second silicon layer so as to prevent phosphorus contained in said first silicon layer from diffusing into said second silicon layer.
2. The semiconductor substrate according to claim 1 , wherein said n-type impurity contained in said third silicon layer has a diffusion coefficient to silicon lower than that of phosphorus, and said third concentration is lower than said first concentration and higher than said second concentration.
3. The semiconductor substrate according to claim 2 , wherein said n-type impurity contained in said third silicon layer is arsenic or antimony.
4. The semiconductor substrate according to claim 3 , wherein said first silicon layer and said third silicon layer have a specific resistance of 0.1 Ω−cm or less.
5. The semiconductor substrate according to claim 1 , wherein thickness of said third silicon layer falls in a range from 0.5 μm to 3 μm.
6. A semiconductor device having a transistor formed on said semiconductor substrate described in claim 1 .
7. The semiconductor device according to claim 6 , wherein said transistor comprises a vertical MOSFET or an insulated gate bipolar transistor.
8. The semiconductor substrate according to claim 6 , wherein said transistor comprises a vertical transistor.
9. The semiconductor substrate according to claim 1 , wherein said third silicon layer is disposed between said first silicon layer and said second silicon layer so as to prevent said phosphorus contained in said first silicon layer from diffusing into said second layer during manufacture.
10. The semiconductor substrate according to claim 9 , wherein said third silicon layer is disposed between said first silicon layer and said second silicon layer so as to prevent said phosphorus contained in said first silicon layer from diffusing into said second layer during annealing.
11. A vertical MOSFET, comprising:
a first silicon layer containing a first impurity of a first conductivity in a first concentration and said first impurity having a first diffusion coefficient;
a second silicon layer containing a second impurity of said first conductivity in a second concentration lower than said first concentration;
a third silicon layer containing a third impurity of said first conductivity having a diffusion coefficient to silicon lower than that of said first impurity in a third concentration between said first concentration and said second concentration, and disposed between said first silicon layer and said second silicon layer so as to prevent said first impurity contained in said first silicon layer from diffusing into said second silicon layer; and
a fourth silicon layer containing a fourth impurity of a second conductivity formed on said second silicon layer as a base layer.
12. The vertical MOSFET according to claim 11 , wherein said third impurity is selected from the group consisting of arsenic and antimony.
13. The vertical MOSFET according to claim 11 , wherein said first impurity and said second impurity comprise the same impurity.
14. The vertical MOSFET according to claim 11 , wherein said third silicon layer has a thickness t such that 0.5 μm ≦t ≦3.0 μm.
15. The vertical MOSFET according to claim 11 , further comprising a gate electrode formed in said fourth silicon layer to reach said second silicon layer.