Micro-fluid ejection head containing reentrant fluid feed slots
View Patent ↗Methods of micro-machining a semiconductor substrate to form through fluid feed slots therein. One method includes providing a semiconductor substrate wafer having a thickness greater than about 500 microns and having a device side and a back side opposite the device side. The back side of the wafer is mechanically ground to provide a wafer having a thickness ranging from about 100 up to about 500 microns. Dry etching is conducted on the wafer from a device side thereof to form a plurality of reentrant fluid feed slots in the wafer from the device side to the back side of the wafer.
1. A method of micro-machining a substrate to form through fluid feed slots therein, the method comprising:
mechanically grinding a back side of a substrate wafer having a device side opposite the back side, to reduce the thickness of the wafer from greater than about 500 microns to about 100 to about 500 microns;
dry etching completely through the wafer from the device side thereof to form a plurality of reentrant fluid feed slots in the wafer from the device side to the back side of the wafer under etching conditions that are effective to minimize device side damage, wherein the fluid feed slots have a wall angle ranging from about 2 to about 12 degrees relative to an axis of flow through the fluid feed slots and are devoid of substantially vertical wall portions.
2. The method of claim 1 , wherein the substrate wafer is mechanically ground to a thickness ranging from about 200 to about 450 microns.
3. The method of claim 1 , wherein the dry etching step is conducted in a reactive ion etching chamber.
4. The method of claim 1 , further comprising dicing the wafer to provide a plurality of substrates.
5. A semiconductor substrate made by the method of claim 4 .
6. A micro-fluid ejection head containing the substrate of claim 5 .
7. In a deep reactive ion etching process for etching a substrate to form one or more reentrant fluid flow slots therein, the improvement comprising:
decreasing a thickness of a wafer from an initial thickness of greater than about 500 microns to a thickness ranging from about 100 up to about 500 microns prior to dry etching a plurality of reentrant fluid feed slots completely through the wafer from a device side to a back side thereof under etching conditions that are effective to minimize device side damage, wherein the fluid feed slots have a wall angle ranging from about 2 to about 12 degrees relative to an axis of flow through the fluid feed slots and are devoid of substantially vertical wall portions.
8. The improvement of claim 7 wherein the thickness of the wafer is decreased by mechanically grinding the back side of the wafer.
9. The improvement of claim 8 , wherein the substrate wafer is mechanically ground to a thickness ranging from about 200 to about 450 microns.
10. The improvement of claim 7 , wherein the thickness of the substrate wafer is decreased to a thickness ranging from about 200 to about 450 microns.
11. The improvement of claim 7 , further comprising dicing the wafer to provide a plurality of substrates.
12. A semiconductor substrate made by the improvement of claim 11 .
13. A micro-fluid ejection head containing the substrate of claim 12 .