Image sensor device with color filters and manufacturing method thereof
View Patent ↗An image sensor device including a substrate, a plurality of photo sensors, a dielectric layer, a planar layer, a plurality of color filters, a plurality of microlenses, and a shield layer is provided. The photo sensors are disposed in the substrate, and the dielectric layer is disposed over the photo sensors and the substrate. The planar layer is disposed over the dielectric layer. The color filters are disposed in the planar layer, wherein each of the color filters is disposed over each of the photo sensors. The microlenses are disposed over the planar layer, wherein each of the microlenses is disposed over each of the color filter. The shield layer including a plurality of openings is disposed in the planar layer and is disposed under or over the color filters, wherein each of the openings is disposed over each of the color filters.
1. An image sensor device, comprising:
a substrate;
a plurality of photo sensors, disposed in the substrate;
a dielectric layer, disposed over the photo sensors and the substrate;
a planar layer, disposed over the dielectric layer;
a plurality of color filters, disposed in the planar layer, wherein each of the color filters is disposed over each of the photo sensors;
a plurality of microlenses, disposed over the planar layer, wherein each of the microlenses is disposed over each of the color filter; and
a shield layer comprising a plurality of openings, wherein the shield layer is disposed in the planar layer and is disposed under or over the color filters, wherein each of the openings is disposed over each of the color filters.
2. The image sensor device of claim 1 , wherein each of the color filters comprise a red color filter, a green color filter, or a blue color filter.
3. The image sensor device of claim 1 , wherein each of the color filters comprises a cyan color filter, a magenta color filter, or a yellow color filter.
4. The image sensor device of claim 1 , wherein the photo sensors is a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.
5. The image sensor device of claim 1 , wherein the shield layer is a rectangular shape or a taper shape.
6. The image sensor device of claim 1 , wherein a transmittance of visible light of the shield layer is less than 10%.
7. A method of forming an image sensor device, comprising:
providing a substrate;
forming a plurality of photo sensors in the substrate;
forming a dielectric layer over the photo sensors and the substrate;
forming a plurality of color filters and a shield layer over the dielectric layer, wherein the shield layer is disposed under or over the color filters, and each of the color filters is disposed over each of the photo sensors, wherein the shield layer comprises a plurality of openings and each of the openings is disposed over each of the photo sensors;
forming a planar layer over the dielectric layer, wherein the planar layer covers the color filters and the shield layer; and
forming a plurality of microlenses over the planar layer, wherein each of the microlenses is disposed over each of the color filter.
8. The method of claim 7 , wherein when the shield layer is disposed under the color filters, the step of forming the color filters and the shield layer over the dielectric layer comprises:
forming the shield layer over the dielectric layer, wherein the shield layer comprises a plurality of openings, and each of the openings is disposed over each of the photo sensors; and
forming a first planar layer over the dielectric layer, wherein the first planar layer covers the shield layer;
forming the color filters over the first planar layer, wherein each of the color filters is disposed over each of the photo sensors; and
forming a second planar layer over the first planar layer and the second planar layer covering the color filters, wherein the planar layer comprises the first planar layer and the second planar layer.
9. The method of claim 7 , wherein when the shield layer is disposed over the color filters, the step of forming the color filters and the shield layer over the dielectric layer comprises:
forming the color filters over the dielectric layer, wherein each of the color filters is disposed over each of the photo sensors;
forming a first planar layer over the dielectric layer, wherein the first planar layercovers the color filters;
forming the shield layer over the first planar layer, wherein the shield layer comprises a plurality of openings, and each of the openings is disposed over each of the photo sensors; and
forming a second planar layer over the first planar layer and the second planar layer covering the shield layer, wherein the planar layer comprises the first planar layer and the second planar layer.
10. The method of claim 7 , wherein each of the color filter comprises a red color filter, a green color filter, or a blue color filter.
11. The method of claim 7 , wherein each of the color filters comprises a cyan color filter, a magenta color filter, or a yellow color filter.
12. The method of claim 7 , wherein the photo sensors are a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.
13. The method of claim 7 , wherein the shield layer is a rectangular shape or a taper shape.
14. The method of claim 7 , wherein a transmittance of visible light of the shield layer is less than 10%.
15. An image sensor device, comprising:
a plurality of photo sensors and a substrate;
a dielectric layer, disposed over the photo sensors and the substrate;
a planar layer, disposed over the dielectric layer;
a plurality of color filters, disposed in the planar layer, wherein each of the color filters is disposed over each of the photo sensors;
a shield layer comprising a plurality of openings, wherein the shield layer is disposed over the planar layer, and each of the opening is disposed over each of the color filters; and
a plurality of microlenses, disposed over the planar layer, wherein each of the microlenses is disposed in each of the openings.
16. The image sensor device of claim 15 , wherein each of the color filters comprises a red color filter, a green color filter, or a blue color filter.
17. The image sensor device of claim 15 , wherein each of the color filters comprises a cyan color filter, a magenta color filter, or a yellow color filter.
18. The image sensor device of claim 15 , wherein the photo sensors are a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.
19. The image sensor device of claim 15 , wherein a transmittance of visible light of the shield layer is less than 10%.
20. A method of forming an image sensor device, comprising:
providing a substrate;
forming a plurality of photo sensors in the substrate;
forming a dielectric layer over the photo sensors and the substrate;
forming a plurality of color filters over the dielectric layer, wherein each of the color filters is disposed over each of the photo sensors,
forming a planar layer over the dielectric layer and the planar layer covering the color filters;
forming a shield layer and a plurality of microlenses over the planar layer, wherein the shield layer comprises a plurality of openings, and each of the openings is disposed over each of the photo sensors, wherein each of the microlenses is disposed in each of the opening.
21. The method of claim 20 , wherein each of the color filters comprises a red color filter, a green color filter, or a blue color filter.
22. The method of claim 20 , wherein each of the color filters comprises a cyan color filter, a magenta color filter, or a yellow color filter.
23. The method of claim 20 , wherein the photo sensors are a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.
24. The method of claim 20 , wherein the shield layer is a rectangular shape or a taper shape.
25. The method of claim 20 , wherein a transmittance of visible light of the shield layer is less than 10%.