IP Library Granted Patent US 7,085,192
Granted Patent B2
US 7,085,192 · App. 11/004,796 · Granted Aug 1, 2006

Semiconductor integrated circuit device

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Quick Facts
Patent No.
US 7,085,192
App. No.
11/004,796
Granted
Aug 1, 2006
Kind
B2
Abstract

In a semiconductor integrated circuit device, a write command decoder decodes a write command and outputs decode pulses. A command counter circuit counts the decode pulses as the number of commands. A latch circuit latches the write aDDRess in response to a count output from the command counter circuit. A latency counter circuit counts a latency in response to the decode pulses. The semiconductor integrated circuit device further includes a circuit for turning on a column selection control signal when the count value of the latency counter circuit exceeds a predetermined latency value and a circuit for outputting the aDDRess latched by the latch circuit as a column aDDRess in response to the column selection control signal being turned on. The semiconductor integrated circuit device performs a write operation to the column aDDRess in response to the column selection control signal being turned on.

Claims (27)

1. A semiconductor integrated circuit device receiving a command and an aDDRess, comprising:

a command decoder for decoding the command and outputting decode pulses;

a command counter circuit for counting the decode pulses as the number of commands;

a latch circuit for latching the aDDRess in response to a count output from the command counter circuit;

a latency counter circuit for counting a latency in response to the decode pulses;

a first output circuit for turning on a column selection control signal when the count value of the latency counter circuit exceeds a predetermined latency value; and

a second output circuit for outputting the aDDRess latched by the latch circuit as a column aDDRess in response to the column selection control signal being turned on.

2. The semiconductor integrated circuit device according to claim 1 , wherein the command is one of a write command and a read command.

3. The semiconductor integrated circuit device according to claim 1 , wherein the semiconductor integrated circuit device is a DDR-II SDRAM.

4. A semiconductor integrated circuit device receiving a write command and a write aDDRess, comprising:

a write command decoder for decoding the write command and outputting decode pulses;

a command counter circuit for counting the decode pulses as the number of commands;

a latch circuit for latching the write aDDRess in response to a count output from the command counter circuit;

a latency counter circuit for counting a latency in response to the decode pulses;

a first output circuit for turning on a column selection control signal when the count value of the latency counter circuit exceeds a predetermined latency value; and

a second output circuit for outputting the aDDRess latched by the latch circuit as a column aDDRess in response to the column selection control signal being turned on;

wherein a write operation to the column aDDRess is carried out in response to the column selection control signal being turned on.

5. The semiconductor integrated circuit device according to claim 4 , wherein the semiconductor integrated circuit device is a DDR-II SDRAM.

6. A semiconductor integrated circuit device receiving a read command and a read aDDRess, comprising:

a read command decoder for decoding the read command and outputting decode pulses;

a command counter circuit for counting the decode pulses as the number of commands;

a latch circuit for latching the read aDDRess in response to a count output from the command counter circuit;

a latency counter circuit for counting a latency in response to the decode pulses;

a first output circuit for turning on a column selection control signal when the count value of the latency counter circuit exceeds a predetermined latency value; and

a second output circuit for outputting the aDDRess latched by the latch circuit as a column aDDRess in response to the column selection control signal being turned on;

wherein a read operation to the column aDDRess is carried out in response to the column selection control signal being turned on.

7. The semiconductor integrated circuit device according to claim 6 , wherein the semiconductor integrated circuit device is a DDR-II SDRAM.

Assignments (8)
CHANGE OF NAME Recorded Aug 24, 2016
From: PS5 LUXCO S.A.R.L.
To: LONGITUDE SEMICONDUCTOR S.A.R.L.
Reel/Frame 039793/0880 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2016
From: PS4 LUXCO S.A.R.L.
To: PS5 LUXCO S.A.R.L.
Reel/Frame 039818/0506 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 15, 2014
From: ELPIDA MEMORY, INC.
To: PS4 LUXCO S.A.R.L.
Reel/Frame 032899/0588 →
RELEASE OF SECURITY INTEREST Recorded Feb 24, 2014
From: APPLE, INC
To: ELPIDA MEMORY, INC.
Reel/Frame 032331/0637 →
SECURITY AGREEMENT Recorded Jul 29, 2013
From: PS4 LUXCO S.A.R.L.
To: ELPIDA MEMORY INC.
Reel/Frame 032414/0261 →
SECURITY AGREEMENT Recorded May 15, 2012
From: ELPIDA MEMORY, INC.
To: APPLE INC.
Reel/Frame 028209/0477 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2007
From: HITACHI, LTD.; HITACHI ULSI SYSTEMS CO., LTD.
To: ELPIDA MEMORY, INC.
Reel/Frame 019280/0839 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2004
From: FUJISAWA, HIROKI; KUBOUCHI, SHUICHI
To: ELPIDA MEMORY, INC.; HITACHI ULSI SYSTEMS CO., LTD.; HITACHI, LTD.
Reel/Frame 016066/0350 →