Patent Assignment
Reel/Frame 028209/0477
Security Agreement
Recorded: 2012-05-15
Received: 2012-05-15
Pages: 39
Assignor
ELPIDA MEMORY, INC.
Executed: 2012-04-10
Assignee
APPLE INC.
1 INFINITE LOOP, CUPERTINO, CA, 95014, UNITED STATES
Covered Properties
(100)
Semiconductor Device Including Stacked Semiconductor Chips
Application:
12/759,198 →
System with Controller and Memory
Application:
12/710,481 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
12/645,784 →
Dll Circuit and Control Method Therefor
Application:
12/552,816 →
Memory Device Including a Programmable Resistance Element
Application:
12/500,673 →
Semiconductor Memory Device
Application:
12/493,448 →
Semiconductor Device Having Single-Ended Sensing Amplifier
Application:
12/382,493 →
Content Addressable Memory Device
Application:
12/367,108 →
Sense Amplifier for Semiconductor Memory Device
Application:
12/285,527 →
Memory Device Including a Programmable Resistance Element
Application:
12/207,077 →
Memory Cell Array and Method of Controlling the Same
Application:
12/142,133 →
Semiconductor Memory Device and Writing Method Thereof
Application:
12/213,051 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
12/133,969 →
Semiconductor Storage Apparatus
Application:
12/003,734 →
Semiconductor Storage Device and Method of Manufacturing the Same
Application:
11/978,600 →
Semiconductor Memory Device Having a Main Amplifier Equipped with a Current Control Circuit in a Burst Read Operation
Application:
11/924,353 →
Ternary Content Addressable Memory with Block Encoding
Application:
11/877,310 →
Semiconductor Device
Application:
11/902,006 →
Semiconductor Device and Memory Circuit Including a Redundancy Arrangement
Application:
11/844,840 →
Semiconductor Device Having Improved Wiring
Application:
11/815,084 →
Semiconductor Storage Device
Application:
11/761,388 →
System with Controller and Memory
Application:
11/759,862 →
Semiconductor Package with Bypass Capacitor
Application:
11/802,888 →
Method for Forming a Metal Oxide Film
Application:
11/746,185 →
Nonvolatile Semiconductor Memory Device and Phase Change Memory Device
Application:
11/666,160 →
Semiconductor Storage Device
Application:
11/686,885 →
Dll Circuit and Semiconductor Device Having the Same
Application:
11/682,662 →
Sense Amplifier for Semiconductor Memory Device
Application:
11/706,409 →
Phase Change Memory Device and Method for Manufacturing Phase Change Memory Device
Application:
11/623,657 →
Stacked Semiconductor Device
Application:
11/651,517 →
Semiconductor Storage Device and Refresh Control Method Therefor
Application:
11/640,388 →
Memory Module and Memory System
Application:
11/634,405 →
Phase-Change Memory Device and Method of Manufacturing Same
Application:
11/563,643 →
Memory System and Data Transmission Method
Application:
11/593,405 →
Semiconductor Memory Device
Application:
11/584,899 →
Synchronous Semiconductor Memory Device
Application:
11/583,980 →
Semiconductor Memory Chip with on-Die Termination Function
Application:
11/582,981 →
Delay Circuit and Delay Synchronization Loop Device
Application:
11/580,111 →
Semiconductor Memory Device with Sub-Amplifiers Having a Variable Current Source
Application:
11/467,793 →
Memory Module and Memory System
Application:
11/492,981 →
Current Limit Circuit and Semiconductor Memory Device
Application:
11/483,662 →
Semiconductor Device Including a Plurality of Semiconductor Chips and a Plurality of Through-Line Groups
Application:
11/418,094 →
Semiconductor Storage Apparatus
Application:
11/409,088 →
Data Storing Method of Dynamic Ram and Semiconductor Memory Device
Application:
11/399,485 →
Semiconductor Device and a Method of Manufacturing the Same
Application:
11/392,689 →
Semiconductor Memory Device and Testing Method Thereof
Application:
11/392,583 →
Semiconductor Device
Application:
11/377,574 →
Semiconductor Memory Device and Writing Method Thereof
Application:
11/340,623 →
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Application:
11/334,504 →
Semiconductor Device Having a Bonding Pad Structure Including an Annular Contact
Application:
11/285,057 →
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Application:
11/264,091 →
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Application:
11/264,129 →
Refresh Control Method of a Semiconductor Memory Device and Semiconductor Memory Device
Application:
11/254,722 →
Semiconductor Memory Device and Refresh Period Controlling Method
Application:
11/152,762 →
Semiconductor Memory Device
Application:
11/151,417 →
Sense Amplifier for Semiconductor Memory Device
Application:
10/534,049 →
Semiconductor Storage Device and Method of Controlling Refreshing of Semiconductor Storage Device
Application:
11/097,247 →
Dynamic Semiconductor Memory Device
Application:
11/064,837 →
Semiconductor Storage Device and Refresh Control Method Therefor
Application:
11/042,441 →
Semiconductor Memory Module, Memory System, Circuit, Semiconductor Device, and Dimm
Application:
11/019,274 →
Content Addressable Memory Including Main-Match Lines and Sub-Match Lines
Application:
11/019,321 →
Semiconductor Integrated Circuit Device
Application:
11/004,796 →
Input/Output Circuit, Reference-Voltage Generating Circuit, and Semiconductor Integrated Circuit
Application:
11/000,005 →
Latch Circuit and Synchronous Memory Including the Same
Application:
10/995,528 →
Semiconductor Device
Application:
10/994,412 →
4N Pre-Fetch Memory Data Transfer System
Application:
10/990,990 →
Stacked Memory, Memory Module and Memory System
Application:
10/979,157 →
Delay Circuit and Delay Synchronization Loop Device
Application:
10/901,220 →
Cell Leakage Monitoring Circuit and Monitoring Method
Application:
10/842,468 →
Memory Module and Memory System
Application:
10/828,189 →
Semiconductor Storage Device
Application:
10/817,860 →
Signal Transmitting System
Application:
10/816,187 →
Method of Deciding Error Rate and Semiconductor Integrated Circuit Device
Application:
10/808,285 →
Method for Forming a Metal Oxide Film
Application:
10/808,193 →
Data Storing Method of Dynamic Ram and Semiconductor Memory Device
Application:
10/753,534 →
Semiconductor Memory Device Adaptive for Use Circumstance
Application:
10/714,210 →
Data Inversion Circuit and Semiconductor Device
Application:
10/680,239 →
Semiconductor Memory Device Having a Hierarchical I/O Structure
Application:
10/658,396 →
Memory System and Data Transmission Method
Application:
10/647,157 →
Memory Module and Memory System Having an Expandable Signal Transmission, Increased Signal Transmission and/or High Capacity Memory
Application:
10/628,517 →
A Semiconductor Memory Device Having Improved Arrangement for Replacing Failed Bit Lines
Application:
10/627,769 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
10/626,532 →
Semiconductor Memory Device Provided with Error Correcting Code Circuitry
Application:
10/617,040 →
Semiconductor Memory Device
Application:
10/446,734 →
Semiconductor Memory Device
Application:
10/445,522 →
Memory System, Module and Register
Application:
10/427,090 →
Semiconductor Memory Device with an Improved Memory Cell Structure and Method of Operating the Same
Application:
10/411,700 →
Input Buffer Circuit and Semiconductor Memory Device
Application:
10/379,200 →
Redundancy Architecture for Repairing Semiconductor Memories
Application:
10/370,578 →
Apparatus and Method of High Speed Current Sensing for Low Voltage Operation
Application:
10/341,933 →
Semiconductor Integrated Circuit
Application:
10/337,322 →
Output Buffer Circuit and Integrated Semiconductor Circuit Device with Such Output Buffer Circuit
Application:
10/320,059 →
Dynamic Semiconductor Memory Device and Method of Controlling Refresh Thereof
Application:
10/317,553 →
Method of Verifying a Semiconductor Integrated Circuit Apparatus, Which Can Sufficiently Evaluate a Reliability of a Non-Destructive Fuse Module After It Is Assembled
Application:
10/310,623 →
Dynamic Random Access Memeory (Dram) Capable of Canceling Out Complementary Noise Developed in Plate Electrodes of Memory Cell Capacitors
Application:
10/309,180 →
Input/Output Circuit, Reference-Voltage Generating Circuit, and Semiconductor Integrated Circuit
Application:
10/279,817 →
Refresh Control Circuit for Ics with a Memory Array
Application:
10/065,195 →
Refreshing of Multi-Port Memory in Integrated Circuits
Application:
10/065,128 →
Semiconductor Integrated Circuit Device and Delay-Locked Loop Device
Application:
10/242,067 →
Interpolating Circuit, Dll Circuit and Semiconductor Integrated Circuit
Application:
10/241,986 →