Method of verifying a semiconductor integrated circuit apparatus, which can sufficiently evaluate a reliability of a non-destructive fuse module after it is assembled

1. A method of verifying a semiconductor integrated circuit apparatus, comprising:

(a) providing a semiconductor integrated circuit apparatus including: a first transistor which has a floating gate in which a potential is floated and to which data is written; a second transistor which has a floating gate connected together with said floating gate and reads out said data written to said first transistor; and a control gate unit, which is coupled to said floating gate, controlling an operation of reading out said data of said second transistor;

(b) comparing a first data outputted through said second transistor when a first potential is applied to said control gate unit with a second data outputted through said second transistor when a second potential is applied to said control gate unit to generate a comparison result; and

(c) verifying said data written to said floating gate based on said comparison result, and

wherein said first potential is different from said second potential.

2. The method of verifying a semiconductor integrated circuit apparatus according to claim 1 , wherein said first potential is a potential supplied from an external portion to said semiconductor integrated circuit apparatus when said data is read out, and

wherein said second potential is a potential generated by boosting said first potential in said semiconductor integrated circuit apparatus.

3. The method of verifying a semiconductor integrated circuit apparatus according to claim 1 , wherein at said (b), said first data latched by a first latching circuit is compared with said second data latched by a second latching circuit.

4. The method of verifying a semiconductor integrated circuit apparatus according to claim 1 , wherein at said (b), said second potential that is trimmed is applied to said control gate unit.

5. The method of verifying a semiconductor integrated circuit apparatus according to claim 1 , wherein at said (b), said second potential is higher than or equal to a potential which is supplied from an external portion to said semiconductor integrated circuit apparatus when said data is read out, and is lower than or equal to a boost potential in which a potential supplied from said external portion to said semiconductor integrated circuit apparatus when said data is programmed, is boosted.

6. A semiconductor integrated circuit apparatus, comprising:

a first transistor which has a floating gate in which a potential is floated and to which data is written;

a second transistor which has a floating gate connected together with said floating gate and reads out said data written to said first transistor; and

a control gate unit which is coupled to said floating gate and controls an operation of reading out said data of said second transistor, and

wherein a verifying operation of said data written to said floating gate is performed based on a comparison result of comparing a first data outputted through said second transistor when a first potential is applied to said control gate unit with a second data outputted through said second transistor when a second potential is applied to said control gate unit, and

wherein said first potential is different from said second potential.

7. The semiconductor integrated circuit apparatus according to claim 6 , further comprising:

a second latch circuit latching said second data.

8. The semiconductor integrated circuit apparatus according to claim 6 , wherein said second potential that is trimmed is applied to said control gate unit.

9. The semiconductor integrated circuit apparatus according to claim 6 , wherein said first potential is supplied to said semiconductor integrated circuit apparatus from an external portion, and said second potential is generated in said semiconductor integrated circuit apparatus.

10. The semiconductor integrated circuit apparatus according to claim 6 , wherein said first potential is a potential supplied from an external portion to said semiconductor integrated circuit apparatus when said data is read out.

11. The semiconductor integrated circuit apparatus according to claim 6 , wherein said second potential is a potential generated by boosting said first potential in said semiconductor integrated circuit apparatus.

12. The semiconductor integrated circuit apparatus according to claim 6 , wherein said first potential is a potential applied to said control gate unit when said data is read out.

13. The semiconductor integrated circuit apparatus according to claim 6 , wherein said second potential is a potential generated by boosting in said semiconductor integrated circuit apparatus a third potential supplied from an external portion to said semiconductor integrated circuit apparatus when said verifying operation is performed.

14. The semiconductor integrated circuit apparatus according to claim 13 , wherein said third potential is different from said first potential.

15. The semiconductor integrated circuit apparatus according to claim 6 , wherein said second potential is lower than a fourth potential generated by boosting in said semiconductor integrated circuit apparatus a fifth potential supplied from an external portion to said semiconductor integrated circuit apparatus when said data is written.

16. The semiconductor integrated circuit apparatus according to claim 6 , wherein said second potential is lower than a sixth potential applied to said control gate unit when said data is written.

17. The semiconductor integrated circuit apparatus according to claim 6 , wherein a first electrode of said first transistor is connected to a data input terminal to which said data is inputted, and

wherein when said data is written to said first transistor, a seventh potential different from each of said first potential and said second potential is applied to a second electrode of said first transistor.

18. The semiconductor integrated circuit apparatus according to claim 6 , wherein each of said first transistor, said second transistor and said control gate unit is constituted by a high withstanding voltage MOS transistor having a single gate structure, and

wherein said first transistor, said second transistor and said control gate unit are formed in structures which can be manufactured by a CMOS manufacturing process.

19. The semiconductor integrated circuit apparatus according to claim 6 , wherein a defective address data indicating a defective address of a DRAM is written to said semiconductor integrated circuit apparatus as said data, and

wherein said second potential is a word line boost potential of said DRAM.

20. The semiconductor integrated circuit apparatus according to claim 19 , wherein a comparison said first data with said second data is performed in an address comparator comparing said defective address with an input address which is used to access said DRAM.

21. The semiconductor integrated circuit apparatus according to claim 19 , wherein a first signal indicating a result of a comparison said first data with said second data is outputted from a redundancy roll call circuit to output a second signal indicating said defective address which is relieved after said semiconductor integrated circuit apparatus is assembled to an external portion of said semiconductor integrated circuit apparatus.

22. The semiconductor integrated circuit apparatus according to claim 6 , wherein said semiconductor integrated circuit apparatus is an EEPROM.