Phase-change memory device and method of manufacturing same
View Patent ↗A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, the heater electrode and the second electrically conductive material plug being not in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.
1. A phase-change memory device comprising:
a phase-change layer;
a heater electrode having an end held in contact with said phase-change layer;
a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of said heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than said first electrically conductive material, said first electrically conductive material plug and said second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, said heater electrode and said second electrically conductive material plug being not in overlapping relation to each other; and
an electrically conductive layer electrically connected to said second electrically conductive material plug.
2. The phase-change memory device according to claim 1 , wherein said contact plug of different kinds of material has a planar shape including:
a wider main body constructed of said second electrically conductive material plug; and
a protrusion projecting from said main body and narrower than said main body, said protrusion being made of said first electrically conductive material, said heater electrode being connected to said protrusion.
3. The phase-change memory device according to claim 2 , wherein said planar shape of said contact plug of different kinds of material is either P-shaped, L-shaped, or T-shaped.
4. The phase-change memory device according to claim 1 , wherein said second electrically conductive material plug is greater in volume than said first electrically conductive material plug.
5. The phase-change memory device according to claim 1 , wherein said first electrically conductive material of said first electrically conductive material plug includes a metal material which is a major constituent of said heater element, and said second electrically conductive material plug includes a metal material which is a major constituent of a ground potential electrode or an interconnect of said phase-change memory device.
6. The phase-change memory device according to claim 1 , wherein said first electrically conductive material of said first electrically conductive material plug includes a metal material which is the same as a metal material of said heater element, and said second electrically conductive material plug includes a metal material which is a major constituent of a ground potential electrode or an interconnect of said phase-change memory device.
7. The phase-change memory device according to claim 1 , wherein said first electrically conductive material of said first electrically conductive material plug comprises a metal which is any one of titanium (Ti), tantalum (Ta), molybdenum (Mo), niobium (Nb), zirconium (Zr) or tungsten (W), or a nitride of the metal, or a silicide of the metal.
8. The phase-change memory device according to claim 1 , wherein said first electrically conductive material of said first electrically conductive material plug comprises titanium nitride (TiN), tantalum nitride (TaN), a molybdenum nitride (MoN), niobium nitride, titanium silicon nitride, titanium aluminum nitride, titanium boron nitride, zirconium-silicon nitride, tungsten-silicon nitride, tungsten-boron nitride, zirconium-aluminum nitride, molybdenum-silicon nitride, molybdenum-aluminum nitride, tantalum-silicon nitride, tantalum-aluminum nitride, titanium oxynitride, titanium aluminum oxynitride, tungsten oxynitride, tantalum oxynitride, tantalum silicide (TaSi), tungsten silicide (WSi), or molybdenum silicide (MoSi).
9. The phase-change memory device according to claim 1 , wherein said second electrically conductive material of said second electrically conductive material plug comprises a metal which is any one of tungsten (W), aluminum (Al), molybdenum (Mo) or copper (Cu), or a silicide of the metal.
10. The phase-change memory device according to claim 1 , wherein the specific resistance of said first electrically conductive material of said first electrically conductive material plug is at least 10 times the specific resistance of said second electrically conductive material of said second electrically conductive material plug.
11. The phase-change memory device according to claim 1 , wherein said first electrically conductive material plug comprises a plug formed by depositing titanium nitride (TiN) on a thin film made of titanium (Ti) disposed on the inner and bottom surfaces of a contact hole defined in an interlayer insulating film, and said second electrically conductive material plug comprises a plug formed by depositing tungsten (W) in a cavity which remains after said titanium nitride (TiN) is deposited.
12. The phase-change memory device according to claim 1 , further comprising:
a switching element for selecting a memory cell; and
a ground potential connecting plug for connecting a ground potential to one pole of said switching element;
said one pole of said switching element being connected to the ground potential through said ground potential connecting plug, and another pole of said switching element being electrically connected to said second electrically conductive material plug of said contact plug of different kinds of material.
13. The phase-change memory device according to claim 12 , wherein said ground potential connecting plug comprises a first electrically conductive material plug and a second electrically conductive material plug as said contact plug of different kinds of material.
14. A phase-change memory device comprising:
a switching element for selecting a memory cell, said switching element being disposed in or on a semiconductor substrate;
a contact plug of different kinds of material having a first electrically conductive material plug and a second electrically conductive material plug whose electrical conductivity and thermal conductivity is greater than that of said first electrically conductive material plug, said first electrically conductive material plug and said second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof;
a heater electrode connected to said first electrically conductive material plug, said heater electrode and said second electrically conductive material plug not being in overlapping relation to each other;
a phase-change layer connected to said heater electrode; and
an electrode layer connected to said phase-change layer.
15. The phase-change memory device according to claim 1 , wherein said phase-change layer comprises a chalcogenide semiconductor layer.
16. The phase-change memory device according to claim 14 , wherein said phase-change layer comprises a chalcogenide semiconductor layer.
17. A method of manufacturing a contact plug of different kinds of material of a phase-change memory device according to claim 1 , comprising the steps of:
selectively patterning a portion of an interlayer insulating film disposed on a semiconductor substrate to form a contact hole having a planar shape including a wider main body and a protrusion projecting from said main body and narrower than said main body;
filling said contact hole with said first electrically conductive material to form said first electrically conductive material plug under such a condition that only said protrusion is fully filled; and
fully filling said main body of said contact hole with said second electrically conductive material to form said second electrically conductive material plug.
18. A method of manufacturing a phase-change memory device according to claim 1 , comprising the steps of:
forming a switching element for selecting a memory cell, in or on a semiconductor substrate;
forming said contact plug of different kinds of material such that said second electrically conductive material plug is held in electrical contact with one pole of said switching element, by a method of manufacturing a contact plug of different kinds of material according to claim 17 ;
forming said heater electrode such that said heater electrode has a lower surface held in contact with an upper surface of said first electrically conductive material plug;
forming said phase-change layer such that said phase-change layer has a lower surface held in contact with an upper surface of said heater electrode; and
forming an electrode layer connected to at least a portion of an upper surface of said phase-change layer.
19. The method of manufacturing a phase-change memory device according to claim 18 , wherein said step of forming said contact plug of different kinds of material includes the step of forming a ground potential plug for keeping another pole of said switching element at a ground potential, when said contact plug of different kinds of material is formed.
20. The method of manufacturing a phase-change memory device according to claim 18 , wherein said switching element comprises an insulated-gate field-effect transistor, and when a gate electrode of said insulated-gate field-effect transistor is formed, an electrically insulating layer is formed on upper and side surfaces of an electrically conductive material layer of said gate electrode.