Patent Assignment
Reel/Frame 032645/0422
Assignment of Assignor's Interest
Recorded: 2014-04-09
Pages: 14
Assignor
ELPIDA MEMORY, INC.
Executed: 2014-02-20
Assignee
MICRON TECHNOLOGY, INC.
8000 SOUTH FEDERAL WAY, BOISE, IDAHO, 83716-9632
Covered Properties
(200)
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
Patent:
6,329,681 →
Application:
09/215,270 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Semiconductor Memory Device Capable of Outputting and Inputting Data at High Speed
Semiconductor Device Manufacturing Method and Semiconductor Device Manufacturing Apparatus
Method of Manufacturing a Capacitor
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Semiconductor Device Having a Cylindrical Capacitor and Method for Manufacturing the Same Using a Two-Layer Structure and Etching to Prevent Blockage
Semiconductor Device Comprising a Memory Portion and a Peripheral Circuit Portion
Stacked-Type Semiconductor Package
Method of Manufacturing Semiconductor Device Having Gate Electrodes of Polymetal Gate and Dual-Gate Structure
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Phase Change Memory Device
Semiconductor Device
Memory Module with Improved Mechanical Strength of Chips
Semiconductor Device Having a Dummy Gate
Memory Module
Semiconductor Storage Device
Semiconductor Device Manufacturing Method for Preventing Patterns from Inclining in Drying Process
Semiconductor Memory Device Including Fuse Detection Circuit to Determine Successful Fuse-Cutting Rate for Optical Fuse-Cutting Conditions
Memory Module That Is Capable of Controlling Input/Output in Accordance with Type of Memory Chip
Semiconductor Device Manufacturing Method Including Forming a Metal Silicide Layer on an Indium-Containing Layer
Semiconductor Memory Device
Semiconductor Device Having a Cylindrical Capacitor
Semiconductor Device Having a Module Board
Chip Information Managing Method, Chip Information Managing System, and Chip Information Managing Program
Method for Forming Capacitor in Semiconductor Device
Current Limit Circuit and Semiconductor Memory Device
Semiconductor Device and Method of Producing the Same
Method of Manufacturing a Semiconductor Device and the Semiconductor Device
Semiconductor Device Having a Sense Amplifier Array with Adjacent Ecc
Semiconductor Manufacturing Apparatus
Method for Manufacturing Semiconductor Device
Phase Change Memory Device and Method of Manufacturing the Device
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Integrated Circuit Device with Protection Capability for Protection Circuits from Static Electrical Charge
Semiconductor integrated circuit device including a silcon layer formed on a diffusion layer
Semiconductor Storage Device
Method for Manufacturing Semiconductor Device, Semiconductor Device and Apparatus Comprising Same
Semiconductor Memory with Sense Amplifier
Semiconductor Device
A Method for Forming a Gate Within a Trench Including the Use of a Protective Film
Method for Production of Semiconductor Device
Phase-Change Memory Device and Method of Manufacturing Same
Phase-Change Memory Device and Method of Manufacturing Same
Method for Production of Semiconductor Device Having a Hole Extending Through a First Insulating Film, a Second Insulating Film and a Third Insulating Film
Method for Manufacturing Semiconductor Device
Synchronous Type Semiconductor Device for High Speed Data Processing
Basic Cell Design Method for Reducing the Resistance of Connection Wiring Between Logic Gates
Process for Producing Semiconductor Integrated Circuit Device
Electrically Rewritable Non-Volatile Memory Element and Method of Manufacturing the Same
Electrically Rewritable Non-Volatile Memory Element
Method for Manufacturing Capacitor
Differential Amplifier Circuit
Method for Manufacturing Semiconductor Silicon Substrate and Apparatus for Manufacturing the Same
Semiconductor Memory Device
Phase Change Memory Device and Method for Manufacturing Phase Change Memory Device
Method for Manufacturing Dynamic Random Access Memory
Semiconductor Device Having a Through Electrode with a Low Resistance and Method of Manufacturing the Same
Circuit Pattern Exposure Method and Mask
Stacked Semiconductor Device
Semiconductor Device Having a Modified Dielectric Film
Nonvolatile Semiconductor Memory Device and Phase Change Memory Device
Overdrive Write Method, Write Amplifier Power Generating Circuit, and Semiconductor Memory Device Including the Same
Internal Power Supply Generating Circuit Without a Dead Band
Phase-Change Memory Device with Minimized Reduction in Thermal Efficiency and Method of Manufacturing the Same
Semiconductor Device and Method of Manufacturing Semiconductor Device
Stacked Semiconductor Memory Device and Control Method Thereof
Semiconductor Device and Manufacture Method Thereof
Semiconductor Device That Includes Transistors Formed on Different Silicon Surfaces
Semiconductor Memory Device Which Controls Refresh of a Memory Array in Normal Operation
Semiconductor Device Having a Smaller Electrostatic Capacitance Electrode
Semiconductor Memory Device
Method for Manufacturing a Semiconductor Device Having a Doped Silicon Film
Nanolaminate-Structure Dielectric Film Forming Method
Semiconductor Memory Device and Manufacturing Method Thereof
Semiconductor Memory Device Comprising Memory Element Programming Circuits Having Different Programming Threshold Power Supply Voltages
Semiconductor Device Having a Circular-Arc Profile on a Silicon Surface
Polishing Device
Probe Card
Semiconductor Device and Manufacture Method Thereof
Semiconductor Memory Device and Fabrication Method Thereof
Semiconductor Memory Device
Semiconductor Device Having Improved Wiring
Semiconductor Device
Method of Manufacturing Semiconductor Device Having Trench-Gate Transistor
Method for Manufacturing a Semiconductor Device Including a Crown-Type Capacitor
Semiconductor Memory Device and Fabrication Method Thereof
Semiconductor Memory Device and Refresh Control Method Thereof
Method for Manufacturing a Semiconductor Device Having a Polymetal Gate Electrode Structure
Semiconductor Device and Manufacture Method Thereof
Semiconductor Storage Device
Semiconductor Memory Device and Semiconductor Device
Semiconductor Device and Method of Producing the Same
Method of Manufacturing Semiconductor Device
Semiconductor Device and Manufacturing Method Thereof
Phase Change Memory Device
Process for Forming Resist Pattern, and Resist Coating and Developing Apparatus
Semiconductor Device and Manufacturing Method of the Same
Semiconductor Device Having a Pseudo Power Supply Wiring
Semiconductor Device Including a Germanium Silicide Film on a Selective Epitaxial Layer
Semiconductor Memory Device
Method of Producing Semiconductor Device
Semiconductor Device Having Fin Field Effect Transistor and Manufacturing Method Thereof
Semiconductor Device, Method for Measuring Characteristics of Element to Be Measured, and Characteristic Management System of Semiconductor Device
Semiconductor Device Including a Trench with a Curved Surface Portion and Method of Manufacturing the Same
Semiconductor Device Having a Capacitance Element and Method of Manufacturing the Same
Method of Manufacturing Semiconductor Device
Semiconductor Memory Device with Transfer Switch and Method of Operating the Device
Semiconductor Device Manufacturing Apparatus and Method
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device Including a Signal Generator Activated Upon Occuring of a Timing Signal
Semiconductor Device Including a Fin-Channel Recess-Gate Misfet
Method for Manufacturing a Three-Dimensional Semiconductor Device and a Wafer Used Therein
Power Supply Voltage Reset Circuit and Reset Signal Generating Method
Dieletric Film Layered Product
Semiconductor Storage Device and Method of Manufacturing the Same
Semiconductor Device and Method of Forming the Same
Semiconductor Memory Device
Memory Module
Redundancy Circuit and Semiconductor Memory Device
Semiconductor Storage Device
Semiconductor Device
Semiconductor Device Including Ground and Power-Supply Planes and a Dielectric Layer Between the Ground and Power-Supply Planes
Polishing Apparatus Including Separate Retainer Rings
Semiconductor Device Including a Plurality of Fuse Elements and Attenuation Members Between or Around the Plurality of Fuse Elements
Reference Voltage Generating Circuit and Semiconductor Integrated Circuit Device
Semiconductor Device and Method of Manufacturing the Same
Metastable-Resistant Phase Comparing Circuit
Photomask Reticle for Use in Projection Exposure, and Manufacturing Methods Therefor
Stacked-Type Semiconductor Package
Semiconductor Memory Device and Method of Manufacturing the Same
Semiconductor Memory Device and Data Processing System
Semiconductor Memory Device
Semiconductor Memory Apparatus, Memory Access Control System and Data Reading Method
Semiconductor Device
Circuit Module and Electrical Component
Method of Manufacturing Semiconductor Device Having Cylinder-Type Capacitor Structure
Capacitor for Semiconductor Device
Semiconductor Stack Package Having Wiring Extension Part Which Has Hole for Wiring
Semiconductor Device and Method for Manufacturing the Same
Method of Manufacturing Semiconductor Device and Semiconductor Device Having a Fin-Shaped Channel
Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device and Method of Forming the Same
Multiport Memory and Information Processing System
Duty Correction Circuit
Semiconductor Memory Device
Semiconductor Device and Method of Manufacturing the Same
Manufacturing Method of Semiconductor Device
Method of Fabricating a Semiconductor Device
Current Limit Circuit and Semiconductor Memory Device
Simulation Method for Transistor Unsuitable for Existing Model
Nonvolatile Memory Device
Semiconductor Device with Transistor, Conductive Pad, and Contact
Semiconductor Device Including an Anti-Fuse Element
Semiconductor Device Performing Serial Parallel Conversion
Semiconductor Device for Supplying Stable Voltage to Control Electrode of Transistor
Capacitor Insulating Film, Capacitor, and Semiconductor Device
Semiconductor Device
Semiconductor Device Having Nonvolatile Memory Element and Data Processing System Including the Same
Semiconductor Device Having a Capacitance Element and Method of Manufacturing the Same
Semiconductor Device Having Data Input/Output Unit Connected to Bus Line
Parity Unit Using 3-Input Nands
Circuit System for Data Transmission
Patent:
7,915,915 →
Application:
12/772,582 →
Method of Fabricating Stacked Semiconductor Chips
Semiconductor Device and Manufacturing Method Thereof
Semiconductor Device
Stacked Semiconductor Memory Device
Method of Manufacturing Semiconductor Device
Semiconductor Device Having Nonvolatile Memory Element and Data Processing System Including the Same
Semiconductor Device with a Selection Circuit Selecting a Specific Pad
Semiconductor Integrated Circuit Device
Semiconductor Memory Device Performing Refresh Operation and Method of Testing the Same
Semiconductor Device
Method of Manufacturing a Semiconductor Device Having Fin-Field Effect Transistor
Method of Manufacturing a Semiconductor Device Having an Electrode Exposed Through a Hole
Method of Manufacturing Semiconductor Device
Semiconductor Device
Latency Counter, Semiconductor Memory Device Including the Same, and Data Processing System
Latency Counter, Semiconductor Memory Device Including the Same, and Data Processing System
Method of Manufacturing Semiconductor Device
Semiconductor Device Having Sense Amplifiers Supplied with an Over-Drive Voltage in a Normal Mode and Supplied with a Step-Down Voltage in a Refresh Mode
Method of Manufacturing Semiconductor Device
Semiconductor Device Having Open Bit Line Architecture
Semiconductor Device Having Hierarchical Data Line Structure and Control Method Thereof
Semiconductor Device
Semiconductor Device Having Level Shift Circuit, Control Method Thereof, and Data Processing System
Semiconductor Memory Device Having Pad Electrodes Arranged in Plural Rows
Semiconductor Device Using Plural Internal Operation Voltages and Data Processing System Using the Same
Semiconductor Device Capable of Detecting Defect of Column Selection Line
Semiconductor Device and Data Processing System
Semiconductor Device Including Analog Circuit and Digital Circuit
Semiconductor Device
Semiconductor Device and Layout Design Apparatus of Semiconductor Device
Semiconductor Device and Data Processing System Including the Same
Semiconductor Device and Data Processing System Including the Same
Semiconductor Device with Vertical Transistor
Clock Generation Circuit, Semiconductor Device Including the Same, and Method of Generating Clock Signal
Related Assignments
(9)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement
May 15, 2012
From: ELPIDA MEMORY, INC.
To: APPLE INC.
Reel/Frame 028209/0477 →
Release of Security Interest
Feb 24, 2014
From: APPLE, INC
To: ELPIDA MEMORY, INC.
Reel/Frame 032331/0637 →
Security Interest
May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Patent Security Agreement
Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
Corrective Assignment to Correct the Replace Erroneously Filed Patent #7358718 with the Correct Patent #7358178 Previously Recorded on Reel 038669 Frame 0001. Assignor(S) Hereby Confirms the Security Interest.
Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
Security Interest
Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
Release of Security Interest
Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
Release of Security Interest
Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
Release of Security Interest
Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →