Semiconductor device
View Patent ↗A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate includes an inner through-electrode, a quadrangular ring-shaped semiconductor, and an outer peripheral through-electrode. The quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.
1. A through-electrode that penetrates a semiconductor substrate and that is insulatively separated from the semiconductor substrate, the through-electrode comprising:
an inner through-electrode;
a quadrangular ring-shaped semiconductor; and an outer peripheral through-electrode, wherein the quadrangular ring-shaped semiconductor is formed around the inner through-electrode, and the outer peripheral through-electrode is formed around the quadrangular ring-shaped semiconductor.
2. The through-electrode according to claim 1 , wherein each of the quadrangular ring-shaped semiconductor and the outer peripheral through-electrode are in such a floating state that no potential is supplied.
3. The through-electrode according to claim 2 , wherein the inner through-electrode, the quadrangular ring-shaped semiconductor, and the outer peripheral through-electrode are insulatively separated from one another by insulating layers.
4. The through-electrode according to claim 2 , wherein:
the inner through-electrode includes a columnar semiconductor and an inner through conducting layer;
the columnar semiconductor has a square or rectangular cross-sectional shape;
the columnar semiconductor is arranged with the same spacing between opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductor; and
the spaces between the opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductor are filled in with the inner through conducting layer.
5. The through-electrode according to claim 2 , wherein:
the inner through-electrode includes a plurality of columnar semiconductors and an inner through conducting layer;
each of the columnar semiconductors has a square or rectangular cross-sectional shape;
the columnar semiconductors are arranged with the same spacing between opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductors and between the adjacent columnar semiconductors; and
the spaces between the opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductors and between the adjacent columnar semiconductors are filled in with the inner through conducting layer.
6. The through-electrode according to claim 4 , wherein the columnar semiconductor is insulatively separated from the inner through conducting layer by an inner through-electrode insulating layer.
7. The through-electrode according to claim 2 , wherein the quadrangular ring-shaped semiconductor is insulatively separated from the inner through conducting layer by the inner through-electrode insulating layer, and insulatively separated from the outer peripheral through conducting layer by the outer peripheral through-electrode insulating layer.
8. The through-electrode according to claim 2 , wherein the outer peripheral through-electrode includes the outer peripheral through conducting layer and the outer peripheral through-electrode insulating layer, and is insulatively separated from the quadrangular ring-shaped semiconductor and the semiconductor substrate by the outer peripheral through-electrode insulating layer.
9. The through-electrode according to claim 2 , wherein a thickness of each of the outer peripheral through conducting layer and the outer peripheral through-electrode insulating layer that constitute the outer peripheral through-electrode, is smaller than a thickness of the respective one of the inner through conducting layer and the inner through-electrode insulating layer that constitute the inner through-electrode.
10. The through-electrode according to claim 2 , further comprising:
at least one outer peripheral layer arranged outside the outer peripheral through-electrode, the at least one outer peripheral layer including a quadrangular ring-shaped semiconductor and an outer peripheral through-electrode.
11. The through-electrode according to claim 1 , wherein the inner through-electrode is connected to a bump directly, or indirectly via connection wiring.
12. A semiconductor device formed by stacking semiconductor chips, each of the semiconductor chips comprising:
an inner through-electrode that penetrates a semiconductor substrate;
a quadrangular ring-shaped semiconductor formed around the inner through-electrode; and
an outer peripheral through-electrode formed around the outer periphery of the quadrangular ring-shaped semiconductor.
13. The semiconductor device according to claim 12 , wherein each of the quadrangular ring-shaped semiconductor and the outer peripheral through-electrode are in such a floating state that no potential is supplied.
14. The semiconductor device according to claim 13 , wherein the inner through-electrode includes a plurality of columnar semiconductors and an inner through conducting layer, and is insulatively separated from the quadrangular ring-shaped semiconductor by an inner through-electrode insulating layer.
15. The semiconductor device according to claim 13 ,
wherein the plurality of columnar semiconductors is arranged with the same spacing between opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductors or between the adjacent columnar semiconductors; and
wherein the spaces between the opposing sides of the quadrangular ring-shaped semiconductor and the columnar semiconductors and between the adjacent columnar semiconductors are filled in with the inner through conducting layer.
16. The semiconductor device according to claim 13 , wherein each of the columnar semiconductors is insulatively separated from the inner through conducting layer by the inner through-electrode insulating layer.
17. The semiconductor device according to claim 13 , further comprising:
at least one outer peripheral layer arranged outside the outer peripheral through-electrode, the at least one outer peripheral layer including a quadrangular ring-shaped semiconductor and an outer peripheral through-electrode.
18. The semiconductor device according to claim 12 ,
wherein the inner through-electrode is connected to a bump directly, or indirectly via connection wiring; and
wherein the semiconductor chips are stacked by the bump.
19. The through-electrode according to claim 5 , wherein the columnar semiconductor is insulatively separated from the inner through conducting layer by an inner through-electrode insulating layer.