Current limit circuit and semiconductor memory device
View Patent ↗A current limit circuit comprising: a current limit element for limiting an output current level to within a predetermined range of a limiting current and including a first PMOS transistor having a source to which a predetermined voltage is applied and a drain through which the output current is supplied; and a gate voltage generating circuit for generating a gate voltage by a feedback control such that a difference between the predetermined voltage and a gate voltage of the first PMOS transistor coincides with a threshold voltage of a second PMOS transistor having approximately the same characteristic as that of the first PMOS transistor in a state in which a predetermined current is flowing through the second PMOS transistor.
1. A device comprising:
a plurality of memory cells;
a first pair of bit lines provided for associated ones of the memory cells;
a first equalizing circuit provided for the first pair of bit lines;
a node supplied with a bit line equalizing voltage;
a first transistor coupled between the equalizing circuit and the node; and
a voltage generation circuit coupled to supply a control voltage to a control electrode of the first transistor, the voltage generation circuit comprising a voltage generator that is configured to generate the control voltage and to adjust a value of the control voltage in response to a variation of the threshold voltage of the first transistor so that the first transistor provides a substantially constant current supply ability that is independent of the variation of the threshold voltage of the first transistor.
2. The device according to claim 1 , further comprising:
a plurality of second pairs of bit lines each provided for associated ones of the memory cells;
a plurality of second equalizing circuits each provided for an associated one of the second pairs of bit lines; and
a plurality of second transistors each connected between an associated one of the second equalizing circuits and the node, the control voltage being further supplied to a control electrode of each of the second transistors.
3. The device according to claim 1 , wherein the voltage generation circuit comprises a comparator circuit that includes a first input terminal supplied with the bit line equalizing voltage and a second input terminal electrically connected to an output terminal of the voltage generation circuit through a circuit element which produces a voltage relative to the threshold voltage of the first transistor so that the control voltage is fed back to the comparator circuit through the circuit element.
4. The device according to claim 3 , wherein the circuit element comprises a third transistor that has a threshold voltage that is substantially equal in variation to the threshold voltage of the first transistor.
5. The device according to claim 4 , wherein the voltage generation circuit further comprises a control unit that outputs the control voltage in response to an output signal of the comparator circuit.
6. The device according to claim 5 , wherein the control circuit comprises an oscillator controlled in oscillation thereof in response to the output signal of the comparator circuit and a charge pump circuit responding to an oscillation signal of the oscillator to produce the control voltage.
7. The device according to claim 1 , wherein:
the voltage generation circuit includes a second transistor being substantially equal in the variation of the threshold voltage to the first transistor, and
the voltage generation circuit is configured to detect a threshold voltage variation of the second transistor as the variation of the threshold voltage of the first transistor and to adjust the value of the control voltage in response to the variation of the threshold voltage of the second transistor.
8. The device according to claim 7 , wherein the voltage generation circuit includes a comparator circuit having a first input terminal supplied with the bit line equalizing voltage and a second input terminal coupled to the second transistor.
9. The device according to claim 8 , wherein the second transistor has a first main terminal, second main terminal and a control terminal, the first main terminal of the second transistor is coupled to the control terminal of the second transistor and the second main terminal of the second transistor is coupled to the second input terminal of the comparator circuit.
10. The device according to claim 8 , wherein the first transistor has a control terminal that couples to the voltage generation circuit, the first main terminal of the second transistor and the control terminal of the second transistor are coupled in common to the control terminal of the first transistor.
11. The device according to claim 3 , wherein the second input terminal of the comparator circuit is connected to a reference voltage source through a resistance.
12. The device according to claim 8 , wherein the second input terminal of the comparator circuit is connected to a reference voltage source through a resistance.
13. The device according to claim 3 , wherein the first transistor operates in a sub-threshold region.