Semiconductor device and manufacture method thereof
View Patent ↗A semiconductor device includes an interlayer insulating film formed on a semiconductor substrate to cover a lower electrode, a side-wall insulating film formed on a side wall of a contact hole formed through the interlayer insulating film to a depth reaching the lower electrode, a heater formed in the interior of the contact hole defined by the side-wall insulating film, and a phase-change film in contact with the top surface of the heater. The heater is in contact with the lower electrode at the bottom surface within the contact hole, and the top surface thereof is located at a lower level than that of the top surface of the side-wall insulating film. The top surface of the heater is located at a lower level than the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.
1. A semiconductor device comprising:
an interlayer insulating film formed over a semiconductor substrate so as to cover a lower electrode;
a side-wall Insulating film formed on a side wall of a contact hole having a depth reaching the lower electrode through the interlayer insulating film;
a heater formed in the interior of the contact hole defined by the sidewall insulating film;
a phase-change film formed in contact with the top surface of the heater; and
an upper electrode formed in contact with the top surface of the phase-change film,
the heater being formed such that it is connected to the lower electrode at the bottom surface thereof, and the level of the top surface of the heater is lower than the level of the top surface of the side-wall insulating film.
2. The semiconductor device according to claim 1 , wherein the level of the top surface of the heater is lower than the level of the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.
3. The semiconductor device according to claim 1 wherein the level of the top surface of the phase-change film formed to be in contact with the top surface of the heater is partially lower than the level of the top surface of the side-wall insulating film.
4. The semiconductor device according to claim 1 , wherein a phase-change region, where phase change occurs, is formed in the phase-change film in an area located lower than the revel of the top surface of the side-wall insulating film.
5. The semiconductor device according to claim 1 , wherein the level of the top surface of the side-wall insulating film is lower than the level of the top surface of the interlayer insulating film.
6. The semiconductor device according to claim 1 , wherein the heater is of a cylindrical shape and has an insulating film inside the cylinder.
7. The semiconductor device according to claim 6 , wherein the level of the top surface of the insulating film is higher than the level of the top surface of the heater and lower than the level of the top surface of the side-wall insulating film.
8. The semiconductor device according to claim 7 , wherein a part of the phase-change film is disposed into the contact hole, a lower surface of the part of the phase-change film being contact with both the top surface and a side surface of the side-wall insulating film in the contact hole, and a part of the upper electrode is disposed into the contact hole, a lower surface of the part of the upper electrode being contact with a top surface of the phase-change film in the contact hole.
9. The semiconductor device according to claim 1 , wherein a part of the phase-change film is disposed into the contact hole, a lower surface of the part of the phase-change film being contact with both the top surface and a side surface of the side-wall insulating film in the contact hole, and a part of the upper electrode is disposed into the contact hole, a lower surface of the part of the upper electrode being contact with a top surface of the phase-change film in the contact hole.
10. A semiconductor device having a memory cell, comprising:
a semiconductor substrate;
a lower electrode over the semiconductor substrate;
an interlayer insulating film over the semiconductor substrate and the lower electrode;
an opening formed in the interlayer insulating film to a depth reaching the lower electrode;
a side-wall insulating film formed on a side wall of the opening;
a heater being in contact with the lower electrode at the bottom surface of the remaining opening inside the side-wall insulating film and buried in the remaining opening such that the height of the heater is lower than that of the side-wall insulating film; and
a phase-change material film formed to be in contact with the top surface of the heater.
11. The semiconductor device according to claim 10 , wherein the height of the heater is lower than the height of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.
12. The semiconductor device according to claim 10 , wherein the upper surface of the bottom portion of the phase-change film located in the remaining opening is formed at a level lower than the height of the side-wall insulating film.
13. The semiconductor device according to claim 10 , wherein the heater is of a cylindrical shape the bottom of which is in contact with the lower electrode, the interior of the cylindrical shape being filled with an insulating material, and the phase-change material being formed in contact with the cylindrical heater and the insulating material.
14. The semiconductor device according to claim 13 , wherein the level of the top surface of the insulating material is higher than the level of the top surface of the heater and lower than the level of the top surface of the sidewall insulating film.