Method of manufacturing semiconductor device
View Patent ↗Provided is a method of manufacturing a semiconductor device including at least two processes. Under an atmosphere comprising hydrogen and oxygen, a sacrificial oxide film is formed on a silicon substrate that is provided with at least one nitride region. Then, the sacrificial oxide film and the nitride region are removed from the silicon substrate.
1. A method of manufacturing a semiconductor device comprising:
under an atmosphere comprising hydrogen and oxygen, forming a sacrificial oxide film on a silicon substrate provided with at least one nitride region;
removing the sacrificial oxide film and the nitride region from the silicon substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a trench on a silicon substrate by using a nitride film as a mask;
forming an isolation region made of oxide materials in the trench so that the silicon substrate is provided with the nitride region.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the forming a sacrificial oxide film is carried out at 800° C. or higher.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the forming a sacrificial oxide film is carried out at 1000° C.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the forming a sacrificial oxide film comprises forming the sacrificial oxide film on at least one device formation region of the silicon substrate.
6. A method of manufacturing a semiconductor device comprising:
forming a trench on a silicon substrate by using a nitride film as a mask;
forming an isolation region made of oxide materials in the trench so that the silicon substrate is provided with at least one nitride region;
under an atmosphere comprising hydrogen and oxygen, forming a sacrificial oxide film on the silicon substrate provided with the at least one nitride region; and
removing the sacrificial oxide film and the nitride region from the silicon substrate;
wherein the forming an isolation region comprises:
forming a first oxide film on the trench by wet oxidation to obtain an oxide trench; and
filling the oxide trench with a second oxide film to form the isolation region.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the forming a sacrificial oxide layer is carried out so that the sacrificial oxide film has a thickness substantially equal to three-fifth of another thickness of the first oxide film.
8. The method of manufacturing a semiconductor device according to claim 6 , wherein the forming a sacrificial oxide film comprising adjusting a thickness of the sacrificial oxide film so that the thickness of the sacrificial oxide film is proportional to the thickness of the first oxide film.
9. A method of manufacturing a semiconductor device, comprising:
forming a pad silicon oxide film on a silicon substrate;
forming a silicon nitride film on the pad silicon oxide film;
patterning a part of the pad silicon oxide film and the silicon nitride film to expose a first surface region of the silicon substrate;
selectively etching the silicon substrate using the silicon nitride film as a mask to form a trench;
forming a liner silicon oxide film on a surface of the trench;
forming a filling insulation film, with which the trench is filled, on the liner silicon oxide film;
removing the silicon nitride film and the pad silicon oxide film to expose a second surface region of the silicon substrate;
covering the second surface region of the silicon substrate with a sacrificial oxide film by heat oxidation under an atmosphere comprising hydrogen and oxygen;
removing the sacrificial oxide film to a newly exposed surface which corresponds to the second surface region of the silicon substrate; and
forming a gate insulation film on the newly-exposed surface.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein the atmosphere contains O atomic radicals and OH − molecular radicals.
11. The method of manufacturing a semiconductor device according to claim 9 , wherein the thickness of the sacrificial oxide film is three-fifths of the thickness of the liner oxide film.
12. The method of manufacturing a semiconductor device according to claim 9 , wherein the thickness of the sacrificial oxide film is adjusted so that it is proportional to the thickness of the liner oxide film.
13. The method of manufacturing a semiconductor device according to claim 10 , wherein the temperature of the atmosphere is 800° C. or higher.