Granted Patent B2

US 7,772,099 · App. 11/765,145 · Granted Aug 10, 2010

Abstract

Claims (9)

1. A method for manufacturing a semiconductor device comprising:

consecutively depositing a doped silicon layer doped with a first-conductivity-type dopant and a non-doped silicon layer to form a layered silicon film overlying a silicon substrate, said silicon substrate including a first region and a second region;

implanting a first-conductivity-type dopant into a portion of said layered silicon film in said first region;

implanting a second-conductivity-type dopant into a portion of said layered silicon film in said second region; and

heat treating said layered silicon film to form a first-conductivity-type silicon film in said first region and a second-conductivity-type silicon film in said second region.

2. The method according to claim 1 , further comprising, before said depositing, forming a recess in said first region of said silicon substrate, wherein said depositing deposits said doped silicon layer and said non-doped silicon layer on said silicon substrate including an internal of said recess, and said non-dope silicon film has a substantially flat top surface.

3. The method according to claim 2 , wherein said doped silicon layer has a thickness larger than half a minimum width of said recess.

4. The method according to claim 1 , further comprising depositing a metallic film on said layered silicon film before or after said heat treatment.

5. The method according to claim 4 , further comprising patterning said layered silicon film and said metallic film to form a gate electrode of a MOSFET.

Assignments (9)