Dieletric film layered product
View Patent ↗In order to provide a dielectric film which can avoid both boron leakage and an increase of the leak current, a semiconductor apparatus which has the dielectric film, a production method of the dielectric film and a production method of the semiconductor apparatus, a dielectric film layered product is applied which includes: a semiconductor substrate ( 2 ); a first hafnium-containing silicon oxide nitride layer ( 3 a ) made from a microcrystalline structure; a second hafnium-containing silicon oxide nitride layer ( 3 b ) made from a non-crystalline structure; and a layered film which is made from the first and second hafnium-containing silicon oxide nitride layers that are layered on the semiconductor substrate, and which has a nitrogen ratio of 15-40 atomic percent.
1. A dielectric film layered product comprising:
a semiconductor substrate;
a first hafnium-containing silicon oxide nitride layer having a microcrystalline structure; and
a second hafnium-containing silicon oxide nitride layer having a non-crystalline structure;
wherein the first and second hafnium-containing silicon oxide nitride layers are layered on the semiconductor substrate, and together constitute a layered film which has a nitrogen ratio of 15-40 atomic percent.
2. A dielectric film layered product according to claim 1 , wherein the first hafnium-containing silicon oxide nitride layer is set on the second hafnium-containing silicon oxide nitride layer.
3. A dielectric film layered product according to claim 2 , wherein the first hafnium-containing silicon oxide nitride layer comprises a crystal size of 1-5 nm.
4. A dielectric film layered product according to claim 1 , wherein the second hafnium-containing silicon oxide nitride layer is set on the first hafnium-containing silicon oxide nitride layer.
5. A dielectric film layered product according to claim 4 , wherein the first hafnium-containing silicon oxide nitride layer comprises a crystal size of 1-5 nm.
6. A dielectric film layered product according to claim 1 , wherein the first hafnium-containing silicon oxide nitride layer comprises a crystal size of 1-5 nm.
7. A dielectric film layered product according to claim 6 , wherein the crystal size of the first hafnium-containing silicon oxide nitride layer is obtained based on a diffraction peak of (111) of a diffraction pattern obtained by applying an in-plane-X-ray diffraction measuring method.
8. A semiconductor apparatus comprising a MOS transistor, wherein the MOS transistor comprises a gate dielectric film which is the dielectric film layered product according to claim 1 .