Granted Patent B2

US 8,124,493 · App. 12/846,305 · Granted Feb 28, 2012

Abstract

Claims (50)

1. A method of manufacturing a semiconductor device, comprising:

forming a first insulating film over a substrate;

forming a second insulating film on the first insulating film;

forming an electrode penetrating the first and the second insulating films;

removing a part of the second insulating film and a part of the electrode so that a first hole is formed in the second insulating film, a first portion of the electrode being exposed through the first hole; and

removing a part of the first portion of the electrode by an isotropic etching.

2. The method according to claim 1 , wherein removing the part of the first portion of the electrode comprises rounding at least one surface of the first portion of the electrode.

3. The method according to claim 1 , wherein the isotropic etching is performed by wet etching using a solution containing at least one of ammonia peroxide mixture, sulfate peroxide mixture, and hydrochloric peroxide mixture.

4. The method according to claim 1 , wherein forming the electrode comprises:

forming a capacitor hole penetrating the first and the second insulating films; and

forming an electrode film covering a bottom surface and a side surface of the capacitor hole.

5. The method according to claim 4 , further comprising:

forming a first mask over the electrode film and the second insulating film after forming the electrode film, the first mask having a second hole partially overlapping the electrode film on the side surface of the capacitor hole in plan view; and

etching the part of the second insulating film and a part of the electrode film using the first mask so that the first portion of the electrode remains under the second hole.

6. The method according to claim 5 , wherein the first portion has a first top surface and a first side surface, the first side surface being defined by an edge of the second hole, and the first top surface and the first side surface are rounded by the isotropic etching.

7. The method according to claim 5 , wherein the first mask is formed by a photoresist film, and the first mask is removed before performing the isotropic etching.

8. The method according to claim 5 , further comprising:

after forming the electrode film, forming a third insulating film filling the capacitor hole, the first mask being formed after forming the third insulating film.

9. The method according to claim 8 , further comprising:

after removing the part of the first portion of the electrode, removing the first insulating film and the third insulating film to expose an outer surface and an inner surface of the electrode.

10. The method according to claim 5 , further comprising:

before forming the first mask, forming a mask insulating film on the electrode film and the second insulating film, the first mask being formed on the mask insulating film, a hole defined by the second hole being formed in the mask insulating film; and

removing the first mask before performing the isotropic etching, wherein the mask insulating film remains on the electrode during the isotropic etching.

11. The method according to claim 1 , further comprising:

after removing the part of the first portion of the electrode, removing the first insulating film to expose an outer surface of the electrode.

12. The method according to claim 11 , further comprising:

after removing the first insulating film, forming a capacitor insulating film on the outer surface of the electrode; and

forming an upper electrode on the capacitor insulating film.

13. The method according to claim 1 , wherein the electrode comprise: at least one material of titanium, titanium nitride, and tungsten.

14. The method according to claim 1 , wherein the isotropic etching is performed by dry etching using a chlorine gas.

15. A method of manufacturing a semiconductor device, comprising:

forming a first insulating film over a substrate;

forming a second insulating film on the first insulating film;

forming a capacitor hole penetrating the second insulating film and the first insulating film;

forming an electrode film covering a bottom surface and a side surface of the first capacitor hole;

forming a mask on the electrode and the second insulating film, the mask having a second hole, the second hole being disposed over a part of the capacitor hole;

removing a part of the second insulating film and a part of the electrode film by dry etching so that a first hole is formed in the second insulating film, the first hole being defined by the second hole, a first portion of the electrode film being exposed through the first hole;

removing the mask; and

removing a part of the first portion of the electrode by an isotropic etching.

16. The method according to claim 15 , wherein a part of the first insulating film under the second hole is removed by removing the part of the second insulating film and the part of the electrode film.

17. The method according to claim 16 , wherein the isotropic etching is performed by wet etching using a solution including hydrogen peroxide water.

18. The method according to claim 17 , further comprising:

after removing the part of the first portion of the electrode, removing the first insulating film to expose an outer surface of the electrode film;

forming a capacitor insulating film on the outer surface of the electrode film; and

forming an upper electrode on the capacitor insulating film.

19. The method according to claim 16 , wherein the isotropic etching is performed by dry etching.

20. The method according to claim 19 , further comprising:

after removing the part of the first portion of the electrode, removing the first insulating film to expose an outer surface of the electrode film;

forming a capacitor insulating film on the outer surface of the electrode film; and

forming an upper electrode on the capacitor insulating film.

Assignments (8)