Semiconductor device having a modified dielectric film
View Patent ↗A semiconductor device has a plurality of interconnect layers each including a plurality of interconnect lines. The semiconductor device includes a dielectric film (HDP film) formed by means of high density plasma-enhanced CVD and including an edge formed on the side surface of the topmost-layer interconnect lines, a silicon oxide film formed by modifying a SOG film on the HDP film between adjacent two of the topmost-layer interconnect lines in the element forming region, and a passivation film formed to cover the HDP film and the topmost-layer interconnect lines.
1. A semiconductor device comprising:
a multilayer interconnection structure overlying a substrate, said multilayer interconnection structure including a plurality of topmost-layer interconnect lines and at least one another-layer interconnect lines underlying said topmost-layer interconnect lines;
a dielectric film having an edge in contact with a sidewall of said topmost-layer interconnect lines, the edge tapering to zero thickness on said sidewall at an angle different than a corresponding angle of said sidewall;
a silicon oxide film covering said dielectric film in a space between adjacent two of said interconnect lines, wherein a combined thickness of said silicon oxide film and said dielectric film is less than a corresponding height of said topmost-layer interconnect lines; and
a passivation film formed on said silicon oxide film and said topmost-layer interconnect lines.
2. The semiconductor device according to claim 1 , wherein said dielectric film includes silicon oxide.
3. The semiconductor device according to claim 1 , further comprising an organic dielectric film covering said passivation film.
4. The semiconductor device according to claim 3 , wherein said organic dielectric film includes polyimide.
5. The semiconductor device according to claim 1 , wherein said passivation film includes SiON and/or SiN.
6. The semiconductor device according to claim 1 , further comprising a fuse formed as a common layer with said another-layer interconnect lines, wherein a portion of said silicon oxide film overlying said fuse is removed.
7. The semiconductor device according to claim 6 , wherein said fuse includes aluminum.
8. The semiconductor device according to claim 1 , wherein said at least one interconnect layer of said multilayer interconnection structure includes aluminum.