Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same
View Patent ↗This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon substrate highly reliable one. Specifically, this invention provides a method for manufacturing a semiconductor silicon substrate including at least two of: a cleaning step of cleaning a substrate to be treated in a presence of carbon dioxide in a supercritical state; a film forming step of forming at least one of a conducting film, an insulating film and barrier film on the substrate to be treated in the presence of carbon dioxide in the supercritical state; an etching step of etching the substrate to be treated in the presence of carbon dioxide in the supercritical state; and a resist removing step of removing a resist on the substrate to be treated in the presence of carbon dioxide in the supercritical state.
1. A method for manufacturing a semiconductor silicon substrate comprising:
a film forming step of forming an electrically conductive film, an insulating film and barrier film on a substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 150 to 350° C. and a pressure of from 7.5 to 12 MPa; and at least one of:
a cleaning step of cleaning the substrate in a presence of carbon dioxide in a supercritical state under conditions of a temperature of from 31 to 100° C. and a pressure of from 18 to 40 MPa;
an etching step of etching the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 31 to 100° C. and a pressure of from 18 to 40 MPa; and
a resist removing step of removing a resist on the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 31 to 80° C. and a pressure of from 18 to 40 MPa.
2. The method of claim 1 , wherein the film forming step comprises:
a first step of forming a barrier film on the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 200 to 350° C. and a pressure of from 7.5 to 12 MPa; and
a second step of forming the electrically conductive film on the substrate Be treated in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 150 to 300° C. and a pressure of from 7.5 to 12 MPa.
3. The method of claim 1 , wherein the film forming step comprises:
a first step of forming the electrically conductive film on the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 200 to 350° C. and a pressure of from 7.5 to 12 MPa;
a second step of forming an insulating film in contact with the electrically conductive film on the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 150 to 350° C. and a pressure of from 7.5 to 12 MPa; and
a third step of forming another electrically conductive film in contact with the insulating film on the substrate in the presence of carbon dioxide in the supercritical state under conditions of a temperature of from 200 to 350° C. and a pressure of from 7.5 to 12 MPa.
4. The method of claim 1 , wherein the steps are performed with inside one vessel.
5. The method of claim 2 , wherein the steps are performed inside one vessel.
6. The method of claim 3 , wherein the steps are performed inside one vessel.
7. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 1 .
8. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 2 .
9. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 3 .
10. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 4 .
11. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 5 .
12. A semiconductor device including a semiconductor silicon substrate obtained by the method of claim 6 .