Method for manufacturing capacitor
View Patent ↗A method for manufacturing a capacitor includes depositing an interlayer insulating film on or above a plug connected to a switching element, forming a hole in the interlayer insulating film such that the opening portion of the hole is surrounded by an overhang structure and that the plug is exposed in the bottom of the hole, removing the overhang structure, forming a lower electrode on the inner surface of the deep hole, forming a dielectric on the lower electrode, and forming an upper electrode on the dielectric. The above steps prevent the formation of a gap in the capacitor, since the overhang structure as a cause of the gap is removed. The coverage by the dielectric is also prevented from being poor.
1. A method for manufacturing a semiconductor device, comprising:
depositing an interlayer insulating film on or above a plug connected to a switching element;
forming a hole in said interlayer insulating film such that an opening portion of said hole is surrounded by an overhang structure and that said plug is exposed in a bottom of said hole;
removing said overhang structure;
forming a lower electrode of a capacitor on an inner surface of said hole;
forming a dielectric on said lower electrode; and
forming an upper electrode of the capacitor on said dielectric.
2. The method for manufacturing a semiconductor device, according to claim 1 , wherein said hole is formed to have a bowing shape in which said hole has a maximum hole width, and
wherein said overhang structure is removed such that a hole width of said hole in said opening portion after said removing is greater than said maximum hole width.
3. The method for manufacturing a semiconductor device, according to claim 1 , wherein said depositing said interlayer insulating film comprises:
depositing a first interlayer insulating film on or above said plug; and
depositing a second interlayer insulating film on said first interlayer insulating film,
wherein an etching rate of said second interlayer insulating film is greater than an etching rate of said first interlayer insulating film upon wet etching with a predetermined condition, and
wherein said removing said overhang structure comprises etching said overhang structure by wet etching method with said predetermined condition.
4. The method for manufacturing a semiconductor device, according to claim 1 , wherein said removing said overhang structure comprises:
forming a member in said hole to protect a first portion of a sidewall and not to protect a second portion of said sidewall; and
removing said second portion, wherein said hole is surrounded by said sidewall, and wherein said opening portion is surrounded by said second portion.
5. The method for manufacturing a semiconductor device, according to claim 4 , wherein said member is formed to cover said first portion and not to cover said overhang structure, and
wherein a widest portion of said hole is surrounded by said first portion.
6. The method for manufacturing a semiconductor device, according to claim 4 , wherein said member comprises an organic photoresist film.
7. The method for manufacturing a semiconductor device, according to claim 1 , wherein said forming said hole comprises:
forming a hard mask on said interlayer insulating film;
removing a portion of said hard mask; and forming said hole to have a bowing shape, arranged in said hard mask, in which said hole has a maximum hole width, and
wherein said removing said overhang structure comprises removing said hard mask.
8. The method for manufacturing a semiconductor devices according to claim 1 , wherein said depositing said interlayer insulating film comprises:
depositing a first interlayer insulating film of a first material on or above said plug; and
depositing a second interlayer insulating film of a second material on said first interlayer insulating film,
wherein an etching rate of said second material is greater than an etching rate of said first material upon wet etching with a predetermined condition, and
wherein said removing said overhang structure comprises etching said overhang structure by wet etching method with said predetermined condition.
9. A method of manufacturing a semiconductor device, comprising:
depositing an interlayer insulating film on a semiconductor substrate, said depositing said interlayer insulating film comprising:
depositing a first interlayer insulating film; and
depositing a second interlayer insulating film on said first interlayer insulating film;
forming a hole in said interlayer insulating film such that a top portion of the hole has an inner surface in a shape of an overhang; and
removing said top portion of the hole,
wherein an etching rate of said second interlayer insulating film is greater than an etching rate of said first interlayer insulating film upon wet etching, and
wherein said removing the top portion of the hole comprises removing a top portion of the second interlayer insulating film by the wet etching.