Method of manufacturing a semiconductor device having fin-field effect transistor
View Patent ↗A semiconductor device includes an element isolation region formed in a semiconductor substrate, an active region surrounded by the element isolation region, and a gate electrode formed in one direction to cross the active region. The semiconductor substrate includes two gate trenches formed in parallel to a major axis direction of the active region in the active region, and a fin-shaped part which is located between the two gate trenches. The gate electrode is buried in the two gate trenches and formed on the fin-shaped part. The fin-shaped part serves as a channel region. A fin field effect transistor in which a width of the channel region is smaller than a gate length is thereby obtained.
1. A method of manufacturing a semiconductor substrate comprising steps of:
forming a mask layer on a semiconductor substrate, the mask layer covering up a region to serve as an active region and including an opening for exposing a region to serve as an STI region;
forming a trench for the STI region using the mask layer;
forming a first insulating film in the trench and in the opening of the mask layer without removing the mask layer;
forming a second opening corresponding to the mask layer in the first insulating film by selectively removing the mask layer;
forming a sidewall insulating film on an inner wall of the second opening;
forming a second insulating film in the second opening in which the sidewall insulating film is formed;
selectively removing the sidewall insulating film in a region in which a gate electrode is to be formed;
forming two trenches in the region in which the gate electrode is to be formed on the semiconductor substrate using the first insulating film and the second insulating film as a mask, and forming a fin-shaped part which is located between the two gate trenches, which is a part of the semiconductor substrate, and which is to serve as a channel region;
forming a gate insulating film at least on an upper surface and a side surface of the fin-shaped part; and
forming the gate electrode buried in the two gate trenches and covering up the fin-shaped part.
2. The method of manufacturing the semiconductor device as claimed in claim 1 , wherein a width of the channel region is smaller than a gate length.
3. The method of manufacturing the semiconductor device as claimed in claim 1 , further comprising:
forming a source region and a drain region by implanting impurity ions into the semiconductor substrate using the gate electrode as a mask; and
selectively removing the gate insulating film formed on surfaces of the source region and the drain region, thereby forming contact regions on the surfaces of the source region and the drain region, respectively.
4. The method of manufacturing the semiconductor device as claimed in claim 2 , further comprising:
forming a source region and a drain region by implanting impurity ions into the semiconductor substrate using the gate electrode as a mask; and
selectively removing the gate insulating film formed on surfaces of the source region and the drain region, thereby forming contact regions on the surfaces of the source region and the drain region, respectively.
5. The method of manufacturing the semiconductor device as claimed in claim 3 , wherein a width of the contact region in one direction to cross the active region is larger than a width of the channel region.
6. The method of manufacturing the semiconductor device as claimed in claim 4 , wherein a width of the contact region in one direction to cross the active region is larger than a width of the channel region.
7. The method of manufacturing the semiconductor device as claimed in claim 1 , wherein the gate insulating film is formed on both side surfaces of the fin-shaped part.
8. The method of manufacturing the semiconductor device as claimed in claim 2 , wherein the gate insulating film is formed on both side surfaces of the fin-shaped part.
9. The method of manufacturing the semiconductor device as claimed in claim 3 , wherein the gate insulating film is formed on both side surfaces of the fin-shaped part.
10. The method of manufacturing the semiconductor device as claimed in claim 4 , wherein the gate insulating film is formed on both side surfaces of the fin-shaped part.