Semiconductor device and manufacturing method of the same
View Patent ↗A manufacturing method of a semiconductor device includes a step of defining an element region by etching a semiconductor substrate using a first dielectric film as a mask, a step of reducing the first dielectric film by isotropic etching, a step of forming a side wall on a side surface of the reduced first dielectric film, a step of removing the first dielectric film, and a step of forming a trench in the element region by etching using the side wall as a mask to form a plurality of fin portions at the element region.
1. A method for manufacturing a semiconductor device, comprising:
defining an element region by etching a semiconductor substrate using a first dielectric film as a mask;
reducing the first dielectric film to form a reduced dielectric film;
covering the reduced dielectric film with a second dielectric film different from the first dielectric film, the second dielectric film including a first portion over an upper surface of the reduced dielectric film and a second portion surrounding a side surface of the reduced dielectric film;
etching back the second dielectric film to remove the first portion and leave the second portion;
removing the reduced dielectric film while leaving the second portion; and
forming a trench in the element region by using the second portion as a mask to form a plurality of fin portions.
2. The method claimed in claim 1 , further comprising:
embedding the element region with a third dielectric film after the defining step;
planarizing the third dielectric film; and
aligning a surface of the third dielectric film with a surface of the element region.
3. The method claimed in claim 2 , further comprising:
removing the second portion; and
aligning the surface of the third dielectric film with a bottom of the trench.
4. A method for manufacturing a semiconductor device, comprising:
defining an element region by etching a semiconductor substrate using a first dielectric film as a mask;
reducing the first dielectric film to form a reduced dielectric film;
covering the reduced dielectric film with a second dielectric film different from the first dielectric film, the second dielectric film including a first portion over an upper surface of the reduced dielectric film and a second portion surrounding a side surface of the reduced dielectric film;
etching back the second dielectric film to remove the first portion and leave the second portion;
removing the reduced dielectric film while leaving the second portion;
forming a trench in the element region by using the second portion as a mask to form a plurality of fin portions;
the trench including a center portion and third and fourth portions sandwiching the center portion therebetween; and
filling a gate electrode in the center portion of the trench while leaving each of the third and fourth portions of the trench unfilled with the gate electrode.
5. The method claimed in claim 4 , further comprising:
embedding the element region with a third dielectric film after the defining;
planarizing the third dielectric film; and
aligning a surface of the third dielectric film with a surface of the element region.
6. The method claimed in claim 5 , further comprising:
removing the second portion; and
aligning the surface of the third dielectric film with a bottom of the trench.