Semiconductor device with a selection circuit selecting a specific pad
View Patent ↗A semiconductor device includes a selection circuit for selecting a specific pad of a semiconductor memory. The semiconductor device is configured to produce a signal determined by a pin array by the selection circuit.
1. A device comprising:
a semiconductor memory chip configured to perform data read and write operations in one of 8-bit, 16-bit and 32-bit units; and
a package substrate on which the semiconductor memory chip is mounted, the package substrate including a plurality of pins;
the semiconductor memory chip comprising:
at least two rows of chip pads, each of the rows including a plurality of chip pads electrically connected to the pins of the package substrate, respectively,
a first circuit producing a read data strobe signal,
a second circuit producing a data signal, and
a selection circuit provided among one of the chip pads, the first circuit and the second circuit, the selection circuit electrically connecting the one of the chip pads to the first circuit when the semiconductor memory chip is configured to perform the data read and write operations in 8-bit unit and to the second circuit when the semiconductor memory chip is configured to perform the data read and write operations in 16-bit unit.
2. The device as claimed in claim 1 , wherein said semiconductor memory chip is of a SDRAM chip of a DDR2 type.
3. The device as claimed in claim 1 , wherein said semiconductor memory chip further comprises a third circuit producing a data strobe signal, and the selection circuit electrically connects the one of the chip pads to the third circuit when the semiconductor memory chip is configured to perform the data read and write operations in 32-bit unit.
4. The device as claimed in claim 3 , wherein said semiconductor memory chip is of a SDRAM chip of a DDR2 type.
5. The device as claimed in claim 3 , wherein the selection circuit comprises a fuse circuit comprising first through third fuses, the first fuse being disposed between one of the chip pads and the first circuit, the second fuse being disposed between one of the chip pads and the second circuit, the third fuse being disposed between one of the chip pads and the third circuit.
6. The device as claimed in claim 3 , wherein the selection circuit comprises a bonding circuit comprising first through third anti-fuses, the first anti-fuse being disposed between one of the chip pads and the first circuit, the second anti-fuse being disposed between one of the chip pads and the second circuit, the third anti-fuse being disposed between one of the chip pad and the third circuit.
7. The device as claimed in claim 3 , wherein the selection circuit comprises:
a decoder circuit; and
first through third tri-state buffers which are controlled by the decoder circuit, the first tri-state buffer being disposed between one of the chip pads and the first circuit, the second tri-state buffer being disposed between one of the chip pads and the second circuit, the third tri-state buffer being disposed between one of the chip pads and the third circuit.
8. The device as claimed in claim 7 , wherein each of the first through the third tri-state buffer comprises two sub tri-state buffers which are faced in the opposite direction each other.
9. The device as claimed in claim 7 , wherein the decoder circuit delivers a control signal of a logic “1” level to one of the first through the third tri-state buffers and delivers a control signal of a logic “0” level to remaining two of the first through the third tri-state buffers,
wherein said one of the first through the third tri-state buffers is put into a high/low state, said remaining two of the first through the third tri-state buffers being put into a high impedance state.
10. A device comprising a SDRAM chip of a DDR2 type, the SDRAM chip comprising:
a plurality of chip pads; and
a control circuit assigning one of the chip pads to a first signal when the SDRAM chip performs data read and write operations in 8-bit unit, to a second signal different from the first signal when the SDRAM chip performs data read and write operations in 16-bit unit and to a third signal different from each of the first and the second signals when the SDRAM chip performs data read and write operations in 32-bit unit.
11. The device as claimed in claim 10 ,
wherein the first signal is used as a read data strobe signal and the second signal is used as a data signal.
12. The device as claimed in claim 11 , wherein the third signal is used as a data strobe signal.
13. The device as claimed in claim 10 , wherein the SDRAM chip further comprises a first circuit producing the first signal, a second circuit producing the second signal and a third circuit producing the third signal, and the control circuit includes a selection circuit selecting one of the first, second and third circuits to electrically connect the one of the first, second and third circuits to the one of the chip pads.
14. The device as claimed in claim 13 , wherein the first circuit produces a read data strobe signal as the first signal, the second circuit produces a data signal as the second signal, and the third circuit produces a data strobe signal as the third signal.
15. The device as claimed in claim 14 , wherein the read data strobe signal is used when the SDRAM chip performs a data read operation of the data read and write operations to output data from an inside of the device to an outside of the device, the data signal is used as one bit of sixteen bits of data which are read from or written into the SDRAM chip, and the data strobe signal is used when the SDRAM chip performs either a data read operation or a data write operation of the data read and write operations.
16. A device comprising:
a SDRAM chip of a DDR2 type which may be configured to perform data read and write operations in one of the 8-bit, 16-bit and 32-bit units; and
a package substrate including a plurality of electrode pins, the SDRAM chip being mounted on the package substrate;
the SDRAM chip comprising:
a plurality of electrode pads each electrically connected to an associated one of the electrode pins of the package substrate;
a first circuit producing a read data strobe signal when the SDRAM chip is configured to perform the data read and write operations in 8-bit unit;
a second circuit producing a data signal when the SDRAM chip is configured to perform the data read and write operations in 16-bit unit;
a third circuit producing a data strobe signal when the SDRAM chip is configured to perform the data read and write operations in 32-bit unit; and
a control circuit forming a first electrical path between one of the electrode pads and the first circuit when the SDRAM chip is configured to perform the data read and write operations in 8-bit unit, a second electrical path between the one of the electrode pads and the second circuit when the SDRAM chip is configured to perform the data read and write operations in 16-bit unit, and a third electrical path between the one of the electrode pads and the third circuit when the SDRAM chip is configured to perform the data read and write operations in 32-bit unit.
17. The device as claimed in claim 16 , wherein the read date strobe signal is used when the SDRAM chip performs a data read operation on the data read and write operations to output data from an inside of the device to an outside of the device, the data signal is used as one bit of sixteen bits of data which are read from or written into the SDRAM chip, and the data strobe signal is used when the SDRAM chip performs either a data read operation or a date write operation of the data read and write operations.