IP Library Granted Patent US 7,647,574
Granted Patent B2
US 7,647,574 · App. 11/589,186 · Granted Jan 12, 2010

Basic cell design method for reducing the resistance of connection wiring between logic gates

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Quick Facts
Patent No.
US 7,647,574
App. No.
11/589,186
Granted
Jan 12, 2010
Kind
B2
Abstract

The basic cell design method of the present invention is a method for carrying out: extended pattern formation for extending the patterns of input wiring and output wiring in the longitudinal direction, forming first extended patterns that extend with a prescribed dimensional width in a direction perpendicular to the longitudinal direction at the ends of the extended patterns, and forming second extended patterns that extend with the prescribed dimensional width from the input wiring and the output wiring at the center of the cell in the longitudinal direction; and dummy pattern formation for subsequently arranging dummy patterns in vacant areas within the cell.

Claims (56)

1. A basic cell design method of logic gates having input wiring and output wiring within a cell, comprising:

carrying out extended pattern formation on a computer, comprising:

extending patterns of said input wiring and said output wiring in a longitudinal direction of the patterns;

forming first extended patterns that extend in a direction perpendicular to the longitudinal direction with a prescribed dimensional width at ends of the extended patterns; and

forming second extended patterns that extend with said prescribed dimensional width from the input wiring and the output wiring at a center of said cell in said longitudinal direction: and

after carrying out said extended pattern formation, carrying out dummy pattern formation, for arranging dummy patterns in vacant areas within the cell.

2. A basic cell design method according to claim 1 , wherein, after carrying out said dummy pattern formation, portions of said first extended patterns within a prescribed range from corners of said cell are removed.

3. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 2 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

4. A basic cell design method according to claim 1 , wherein, after carrying out said dummy pattern formation, said first extended patterns and said second extended patterns are removed, and further, the patterns of said input wiring and said output wiring are reduced.

5. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 4 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

6. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 1 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

7. The basic cell design method according to claim 1 , wherein each of the dummy patterns is formed between the first and second extended patterns.

8. The basic cell design method according to claim 1 , wherein the extended pattern formation comprises:

extending the patterns of the input wiring and the output wiring in the longitudinal direction as far as positions separated by one-half of a minimum lithographic dimension from cell boundaries; and

extending the first extended patterns and the second extended patterns as far as positions separated by one-half of the minimum lithographic dimension from cell boundaries.

9. A basic cell design method of logic gates having input wiring and output wiring within a cell, comprising:

carrying out extended pattern formation on a computer, comprising:

extending patterns of said input wiring and said output wiring in a longitudinal direction of the patterns;

forming first extended patterns that extend in a direction perpendicular to the longitudinal direction with a prescribed dimensional width at ends of the extended patterns; and

forming second extended patterns that extend with said prescribed dimensional width from the input wiring and the output wiring at a center of said cell in said longitudinal direction: and

after carrying out said extended pattern formation, carrying out dummy pattern formation, for arranging dummy patterns in vacant areas within the cell,

wherein said extended pattern formation includes processes of extending the patterns of said input wiring and said output wiring in said longitudinal direction as far as positions separated by one-half of a minimum lithographic dimension from cell boundaries and extending said first extended patterns and said second extended patterns as far as positions separated by one-half of said minimum lithographic dimension from cell boundaries, and

wherein said dummy pattern formation includes a process of arranging said dummy patterns such that a distance of at least said minimum lithographic dimension is maintained with other patterns within said cell and a distance of one-half said minimum lithographic dimension is maintained from cell boundaries.

10. A basic cell design method according to claim 9 , wherein, after carrying out said dummy pattern formation, portions of said first extended patterns within a prescribed range from corners of said cell are removed.

11. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 10 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

12. A basic cell design method according to claim 9 , wherein, after carrying out said dummy pattern formation, said first extended patterns and said second extended patterns are removed, and further, the patterns of said input wiring and said output wiring are reduced.

13. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 12 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

14. A layout design method of a logic circuit that uses basic cells according to the basic cell design method according to claim 9 , wherein:

a plurality of said basic cells are arranged in accordance with logic circuit information that includes a number of said logic gates and connection relations of said logic gates; and

the patterns of said input wiring and said output wiring between said plurality of basic cells are connected in the same layer as patterns in accordance with said logic circuit information.

15. A design device comprising:

a memory unit for storing configuration information of logic gates having input wiring and output wiring within a cell; and

a control unit for, upon an input of configuration of said logic gates and instructions indicating that a basic cell of said logic gates is to be designed, extending patterns of said input wiring and said output wiring in a longitudinal direction of said patterns, forming first extended patterns that extend in a direction perpendicular to the longitudinal direction with a prescribed dimensional width at ends of said extended patterns, forming second extended patterns that extend with said prescribed dimensional width from the input wiring and the output wiring at a center of said cell in the longitudinal direction, and arranging dummy patterns in vacant areas within said cell.

16. The design device according to claim 15 , wherein the control unit extends the patterns of the input wiring and the output wiring in the longitudinal direction as far as positions separated by one-half of a minimum lithographic dimension from cell boundaries, and extends the first extended patterns and the second extended patterns as far as positions separated by one-half of the minimum lithographic dimension from cell boundaries.

17. The design device according to claim 16 , wherein the control unit arranges the dummy patterns such that a distance of at least the minimum lithographic dimension is maintained with other patterns within the cell and a distance of one-half the minimum lithographic dimension is maintained from cell boundaries.

18. A computer-readable storage medium tangibly embodying a computer program for causing a computer to execute a design method of a basic cell that uses logic gates having input wiring and output wiring within a cell, said program causing the computer to execute processes for:

carrying out extended pattern formation for:

extending patterns of said input wiring and said output wiring in a longitudinal direction of the patterns,

forming first extended patterns that extend with a prescribed dimensional width in a direction perpendicular to the longitudinal direction at ends of the extended patterns; and

forming second extended patterns that extend with said prescribed dimensional width from the input wiring and the output wiring at a center of said cell in said longitudinal direction; and

after carrying out said extended pattern formation, carrying out dummy pattern formation for arranging dummy patterns in vacant areas within said cell.

19. The computer-readable storage medium tangibly embodying a computer program according to claim 18 , wherein the extended pattern formation comprises:

extending the patterns of the input wiring and the output wiring in the longitudinal direction as far as positions separated by one-half of a minimum lithographic dimension from cell boundaries; and

extending the first extended patterns and the second extended patterns as far as positions separated by one-half of the minimum lithographic dimension from cell boundaries.

20. The computer-readable storage medium tangibly embodying a computer program according to claim 19 , wherein the dummy pattern formation comprises:

arranging the dummy patterns such that a distance of at least the minimum lithographic dimension is maintained with other patterns within the cell and a distance of one-half the minimum lithographic dimension is maintained from cell boundaries.

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2014
From: ELPIDA MEMORY, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 032645/0422 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 30, 2006
From: HARUKI, TADASHI
To: ELPIDA MEMORY, INC.
Reel/Frame 018478/0781 →