Semiconductor device and manufacturing method thereof
View Patent ↗To provide a semiconductor device including a first silicon pillar, an interlayer dielectric film provided on an upper surface of the first silicon pillar and having a through-hole filled with a conductive material, and a first-diffusion-layer contact plug provided on an upper-side opening of the through-hole. An area of a lower-side opening of the through-hole is equal to an area of the upper surface of the first silicon pillar, and an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole. With this configuration, an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.
1. A semiconductor device comprising:
a substrate;
a first silicon pillar projecting substantially perpendicularly with respect to a main surface of the substrate;
an interlayer dielectric film that covers the main surface of the substrate, the interlayer dielectric film having a through-hole into which a conductive material is buried, the through-hole having a lower-side opening that exposes an upper surface of the first silicon pillar and an upper side opening;
a first diffusion layer formed in or neighboring an upper part of the first silicon pillar;
a second diffusion layer formed in or neighboring a lower part of the first silicon pillar;
a first-diffusion-layer contact plug provided on the upper-side opening of the through-hole so as to contact the conductive material within the through-hole; and
a gate electrode that covers a side surface of the first silicon pillar via a first gate dielectric film, wherein
an area of the lower-side opening of the through-hole is substantially equal to an area of the upper surface of the first silicon pillar,
an area of the upper-side opening of the through-hole is larger than the area of the lower-side opening of the through-hole, and
an area of a contact surface between the conductive material within the through-hole and the first-diffusion-layer contact plug is larger than the area of the upper surface of the first silicon pillar.
2. The semiconductor device as claimed in claim 1 , wherein an area of a cross section parallel to the main surface at a relatively upper position of the through-hole is larger than an area of a cross section parallel to the main surface at a relatively lower position of the through-hole.
3. The semiconductor device as claimed in claim 1 , wherein a center of the through-hole and a center of the first silicon pillar match each other as viewed from perpendicular direction with respect to the main surface of the substrate.
4. The semiconductor device as claimed in claim 1 , further comprising a sidewall dielectric film that covers an inner wall of the through-hole.
5. The semiconductor device as claimed in claim 1 , wherein the conductive material within the through-hole serves as the first diffusion layer.
6. The semiconductor device as claimed in claim 1 , further comprising:
a second silicon pillar parallel to the first silicon pillar;
a cap insulation film that covers an upper part of the second silicon pillar; and
a gate contact plug, wherein
the gate electrode also covers a side surface of the second silicon pillar via a second gate dielectric film, and
the gate contact plug is connected to the upper surface of the gate electrode that is positioned at a part of a periphery of the second silicon pillar.
7. The semiconductor device as claimed in claim 6 , wherein the interlayer dielectric film comprises a silicon oxide, and the cap insulation film comprises a silicon nitride.
8. The semiconductor device as claimed in claim 1 , further comprising a second-diffusion-layer contact plug connected to the second diffusion layer.