Phase change memory device
View Patent ↗A phase change memory device comprises an insulating layer and a phase change layer formed on the insulating layer. A phase change layer has a pad portion. The pad portion is formed with at least one slit.
1. A phase change memory device comprising an insulating layer and a phase change layer formed on the insulating layer,
the phase change layer having a pad portion,
the pad portion being provided with at least one slit.
2. A phase change memory device as claimed in claim 1 , wherein
the pad portion has a periphery portion and a center portion, the center portion being surrounded by the periphery portion, the at least one slit is formed on the center portion.
3. A phase change memory device as claimed in claim 2 , wherein
the center portion has an outline of a circular shape, a size of the outline being not larger than the pad portion.
4. A phase change memory device as claimed in claim 1 , further comprising a metal layer formed on the phase change layer, the metal layer being provided with at least one additional slit communicating with the slit of the phase change layer.
5. A phase change memory device as claimed in claim 1 , wherein an adhesive layer is provided between the insulating layer and the phase change layer.
6. A phase change memory device as claimed in claim 1 , further comprising a metal layer formed on the phase change layer, the phase change layer having a thermal expansion rate which is larger than that of the metal layer and of the insulating layer.
7. A phase change memory device as claimed in claim 1 , wherein the at least one slit comprises at least one first slit extending in a first direction and at least one second slit extending in a second direction perpendicular to the first direction.
8. A phase change memory device as claimed in claim 7 , wherein the first slit and the second slit are coupled with each other.