Semiconductor device having a bonding pad structure including an annular contact
View Patent ↗A bonding pad structure in a semiconductor device includes a contact pad connected to an interconnect, a bonding pad overlying the contact pad with an intervention of an insulating film and exposed from an opening of a passivation film, and an annular contact disposed between the contact pad and the bonding pad for electric connection therebetween. The annular contact encircles the opening as viewed normal to the substrate surface.
1. A semiconductor device comprising:
a substrate;
a first pad overlying said substrate and connected to an interconnect;
an insulating film formed on said first pad;
a second pad formed on said insulating film and overlying said first pad;
a passivation film formed on said second pad and having an opening to expose therethrough at least a central area of said second pad the central area of the second pad exposed by the opening of the passivation film being capable of making a direct contact with a probe pin; and
an annular contact disposed within said insulating film between said first pad and said second pad for connecting together said first pad and said second pad, said annular contact continuously surrounding said opening as viewed normal to said substrate and having an innermost edge outside the opening as viewed normal to said substrate to be completely hidden by the passivation film as viewed normal to the substrate.
2. The semiconductor device according to claim 1 , wherein said first pad, said second pad and said annular contact define a closed space receiving therein a portion of said insulating film.
3. The semiconductor device according to claim 1 , further comprising another annular contact disposed within said insulating film between said first pad and said second pad, said another annular contact continuously surrounding said annular contact as viewed normal to said substrate.
4. The semiconductor device according to claim 3 , wherein said first pad, said second pad, said annular contact and said another annular contact define a closed space receiving therein a portion of said insulating film.
5. The semiconductor device according to claim 1 , further comprising at least one reinforcement contact disposed within said insulating film between said first pad and said second pad, said annular contact encircling said reinforcement contact as viewed normal to said substrate.
6. The semiconductor device according to claim 5 , wherein said at least one reinforcement contact include an array of said reinforcement contacts.
7. The semiconductor device according to claim 6 , wherein said reinforcement contacts are rectangular plates and disposed parallel to one another.
8. A semiconductor device comprising:
a substrate;
a first pad overlying said substrate;
an insulating film covering said first pad;
a second pad formed on said insulating film and overlying said first pad, said second pad having a lower surface on the insulating film and an upper surface opposing to the lower surface, the upper surface of the second pad including a first inner portion and a first peripheral portion surrounding the first inner portion;
a passivation film covering said second pad and having an opening to expose the first inner portion of the upper surface of the second pad covered by the passivation film while keeping the first peripheral portion of the upper surface of the second pad covered by the passivation film, the lower surface of the second pad thereby including a second inner portion corresponding to the first inner portion of the upper surface and a second peripheral portion corresponding to the first peripheral portion of the upper surface; and
an annular contact embedded in said insulating film to form an electrical path between said first and second pads, the annular contact being in contact with the second peripheral portion of the lower surface of the second pad and having an innermost edge outside the opening as viewed normal to said substrate so that the annular contact surrounds a portion of the insulating film under the second inner portion of the lower surface of the second pad.
9. The device as claimed in claim 8 , wherein said annular contact is a first annular contact and said device further comprising a second annular contact which is embedded in the insulating film to surround the portion of the insulating film under the second inner portion of the lower surface of the second pad with an intervention of the first annular contact therebetween, the second annular contact being in contact with the second peripheral portion of the lower surface of the second pad.
10. The device as claimed in claim 9 , wherein the first inner portion of the upper surface of the second pad exposed by the opening is capable of making a contact with a probe pin.
11. The device as claimed in claim 8 , further comprising a plurality of reinforcement contacts embedded in the portion of the insulating film under the second inner portion of the lower surface of the second pad surrounded by the annular contact.
12. The device as claimed in claim 11 , wherein the reinforcement contacts are arranged in a matrix of a plurality of rows and columns.
13. The semiconductor device according to claim 1 , wherein said first pad, said second pad and said annular contact define a closed space receiving therein a portion of said insulating film; and
wherein said closed space is free of further contacts interconnecting said first and second pads.
14. The semiconductor device according to claim 8 , wherein said first pad, said second pad and said annular contact define a closed space receiving therein a portion of said insulating film; and
wherein said closed space is free of further contacts interconnecting said first and second pads.