Granted Patent B2

US 7,256,144 · App. 10/808,193 · Granted Aug 14, 2007

Abstract

Claims (51)

1. A method for forming a semiconductor device comprising the steps of:

depositing a monoatomic film including a metal on a base by using a metal source including a compound containing said metal and no oxygen;

depositing a metal oxide film including oxide of said metal on said monoatomic film by using a CVD technique; and

before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

2. The method according to claim 1 , wherein said oxidizing gas includes heated H 2 O.

3. The method according to claim 1 , wherein said oxidizing gas includes at least one gas selected from the group consisting O 2 , active oxygen, ozone, and N 2 O.

4. The method according claim 1 , further comprising, before said monoatomic film depositing step, the step of supplying hydrofluoric acid onto a surface of said base.

5. The method according to claim 1 , wherein said metal source includes at least one said compound selected from the group consisting of TaCl 5 , TaF 5 and Ta(N(C 2 H 5 ) 2 ) 3 , and said metal oxide film is tantalum oxide.

6. The method according to claim 1 , wherein said metal source includes Al(CH 3 ) 3 , and said metal oxide is aluminum oxide.

7. The method according to claim 1 , wherein said metal source includes TiC 4 or Ti(N(CH 3 ) 2 ) 4 and said metal oxide is titanium oxide.

8. The method according to claim 1 , wherein said metal source includes at least one said compound selected from the group consisting of Hf(NCH 3 ) 2 ) 4 , Hf(N(C 2 H 5 )(CH 3 )) 4 and Hf(C 2 H 5 ) 2 ) 4 , and said metal oxide is hafnium oxide.

9. The method according to claim 1 , wherein said metal source includes at least one said compound selected from the group consisting of NbCl 5 , NbF 5 and Nb(N(C 2 H 5 ) 2 ) 3 , and said metal oxide is niobium oxide.

10. The method according to claim 1 , further comprising, between said monoatomic film depositing step and said metal oxide film depositing step, the step of supplying oxidizing gas onto a surface of said monoatomic film.

11. The method according to claim 1 , wherein said base is either silicon substrate, polysilicon film, silicon nitride film or a metallic film.

12. The method according to claim 1 , further comprising the step of forming a conductive film on said metal oxide film, wherein said steps are used for forming a capacitor including said base as a bottom electrode, said metal oxide film as a capacitor insulation film, and said conductive film as a top electrode.

13. A method for forming a semiconductor device comprising:

depositing a monoatomic film including a metal on a base in an oxygen-free environment; and

depositing a metal oxide film including an oxide of the metal on the monoatomic film using a CVD technique; and

before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

14. The method of claim 13 , wherein the semiconductor device is adapted to function as a capacitor.

15. The method of claim 13 , wherein the depositing of the monoatomic film including the metal includes using a metal source including a compound containing the metal.

16. A semiconductor device formed by a method, the method comprising:

depositing a monoatomic film including a metal an a base in an oxygen-free environment; and

depositing a metal oxide film including an oxide of the metal on the monoatomic film using a CVD technique; and

before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

17. The semiconductor device of claim 16 , wherein the semiconductor device is adapted to function as a capacitor.

18. A method to form a semiconductor device comprising the steps of:

depositing a monoatomic seed layer containing a metal on a base by using a metal source including a compound containing said metal and no oxygen, said deposition done via an atomic layer deposition (ALD) technique; and

introducing an oxygen source to convert said monoatomic seed layer containing metal to a monoatomic seed layer containing a metal oxide and depositing a film of the same metal oxide on said monoatomic seed layer via a CVD technique; and

before said monoatomic seed layer depositing step, the step of supplying oxidizing gas onto a surface of said base.

19. The method of claim 18 , wherein said metal source includes at least one said compound selected from the group consisting of TaCl 5 , TaF 5 and Ta(N(C 2 H 5 ) 2 ) 3 , and said metal oxide film is tantalum oxide.

20. The method of claim 18 , wherein said oxygen source is O 2 gas.

21. The method of claim 18 , wherein said metal source includes at least one said compound selected from the group consisting of Hf(NCH 3 ) 2 ) 4 , Hf(N(C 2 H 5 )(CH 3 )) 4 and Hf(C 2 H 5 ) 2 ) 4 , and said metal oxide is hafnium oxide.

22. The method of claim 18 , wherein said metal source includes at least one said compound selected from the group consisting of NbCl 5 , NbF 5 and Nb(N(C 2 H 5 ) 2 ) 3 , and said metal oxide is niobium oxide.

23. A method for forming a semiconductor device comprising the steps of:

forming a bottom electrode having thereon hemi-spherical grains;

forming a silicon nitride film on said bottom electrode by using a rapid thermal nitration technique;

forming a capacitor insulator film on said silicon nitride film; and

forming a top electrode on said capacitor insulator film, said capacitor insulator film forming step including:

providing oxidizing gas to bind oxygen atoms onto a surface of said silicon nitride film;

depositing a monoatomic film including a metal, by using an atomic layer deposition technique using a source gas including said metal, onto said silicon nitride film bound with said oxygen atoms; and

forming, subsequent to said depositing step, a metal oxide film including oxide of said metal on said monoatomic film by using a CVD technique.

24. A method for forming a semiconductor device comprising the steps of:

forming a bottom electrode having thereon hemi-spherical grains;

forming a silicon nitride film on said bottom electrode by using a rapid thermal nitration technique;

forming a capacitor insulator film on said silicon nitride film; and

forming a top electrode on said capacitor insulator film, said capacitor insulator film forming step including;

providing oxidizing gas to bind oxygen atoms onto a surface of said silicon nitride film;

depositing a monoatomic film including a metal by using an atomic layer deposition technique using a source gas including said metal, onto said silicon nitride film bound with said oxygen atoms;

oxidizing said monoatomic film to form a metal oxide film including said metal; and

depositing another metal oxide film including oxide of said metal onto said metal oxide film by using a CVD technique.

Assignments (8)