Single mask via method and device

1. A device comprising:

a first element having a first contact structure;

a second element having a second contact structure;

said first element bonded to said second element;

a first via formed in said first element and extending from a back surface of said first element to said first contact structure;

a second via extending from said first contact structure to said second contact structure and communicating with said first via;

said first contact structure directly connected to said second contact structure; and

a contact member connected to said first and second contact structures.

2. A device as recited in claim 1 , comprising:

said first contact structure having a planar surface connected to said contact member.

3. A device as recited in claim 1 , comprising:

said first contact structure having a planar surface and a side surface connected to said contact member.

4. A device as recited in claim 1 , comprising:

said first contact structure having an aperture; and

said contact member extending through said aperture to second contact structure.

5. A device as recited in claim 1 , comprising:

said first contact structure comprising at least a pair of contact structures with a space between said contact structures; and

said contact member extending through said space to said second contact structure.

6. A device as recited in claim 1 , comprising:

a back surface of said first contact structure connected to said contact member.

7. A device as recited in claim 1 , comprising:

a dielectric film formed on sides of said first via; and

said contact member comprising a first metal layer formed on said dielectric film and a second metal layer formed on said first metal layer.

8. A device as recited in claim 1 , comprising:

a mask formed on said first element.

9. A device as recited in claim 8 , comprising:

said mask having a high etch selectivity to material etched from said first element to form said first via.

10. A device as recited in claim 9 , comprising:

said mask having a high etch selectivity to material etched from said second element to form said second via.

11. A device as recited in claim 9 , comprising:

said mask comprising at least one or a combination of aluminum, tungsten, platinum, nickel, or molybdenum.

12. A device as recited in claim 8 , comprising:

said first contact structure having an aperture;

said mask defining a width of said first via; and

said aperture defining a width of said second via.

13. A device as recited in claim 1 , wherein:

said first element is a first semiconductor device; and

said second element is one of a second semiconductor device and a module.

14. A device as recited in claim 1 , comprising:

a mask material formed on said first contact structure.

15. A device as recited in claim 1 , comprising:

an electroless plated layer formed on said first contact structure.

16. A device as recited in claim 1 , wherein:

said first element is directly bonded to said second element.

17. A device as recited in claim 1 , wherein:

said first element comprises a first non-metallic region;

said second element comprises a second non-metallic region; and

said first and second non-metallic regions are directly bonded.

18. A device comprising:

a first element having a first contact structure;

a second element having a second contact structure;

said first element disposed on said second element;

said first contact structure directly connected to said second contact structure; and

a via formed in said first element and exposing said first contact structure,

said first element comprising a surface having an insulating material and said contact structure; and

said second contact structure being in contact with said insulating material.

19. A device as recited in claim 18 , comprising:

a contact member formed in said via and connected to said first contact structure.

20. A device as recited in claim 19 , comprising:

said first contact structure having a planar surface connected to said contact member.

21. A device as recited in claim 19 , comprising:

a back surface of said first contact structure connected to said contact member.

22. A device as recited in claim 19 , comprising:

a dielectric film formed on sides of said via.

23. A device as recited in claim 22 , comprising:

said contact member comprising a first metal layer formed on said dielectric film and a second metal layer formed on said first metal layer.

24. A device as recited in claim 22 , comprising:

said contact member formed on said dielectric film and said first contact structure.

25. A device as recited in claim 18 , comprising:

an electroless plated layer formed on said first contact structure.

26. A device as recited in claim 18 , comprising:

said first element having first and second opposing surfaces;

said first surface bonded to said second element; and

said via extending from said second surface to said first contact structure.

27. A device as recited in claim 18 , wherein:

said first element is directly bonded to said second element.

28. A device as recited in claim 18 , wherein:

said first element comprises a first non-metallic region;

said second element comprises a second non-metallic region; and

said first and second non-metallic regions are directly bonded.

29. A device as recited in claim 18 , wherein said first element comprises a semiconductor substrate.

30. A device as recited in claim 18 , wherein said first element is bonded to second element.