IP Library Granted Patent US 40,842
Granted Patent E1
US 40,842 · App. 11/008,755 · Granted Jul 14, 2009

Memory elements and methods for making same

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Quick Facts
Patent No.
US 40,842
App. No.
11/008,755
Granted
Jul 14, 2009
Kind
E1
Abstract

Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

Claims (12)

1. A memory cell comprising:

a substrate;

a structure protruding from the substrate, the structure having at least one corner, the structure comprising one of a first conductive material and a first memory material;

a layer of insulating material disposed over the structure in a manner that leaves the at least one corner of the structure exposed to form at least one point contact;

at least one layer of material disposed over the at least one point contact, the at least one layer of material comprising a second conductive material if the structure comprises the first memory material, and the at least one layer of material comprising a second memory material if the structure comprises the first conductive material; and

a conductive layer disposed over the at least one layer of material if the at least one layer of material comprises the second memory material.

2. The memory cell of claim 1 , wherein the substrate comprises a semiconductor substrate.

3. The memory cell of claim 1 , wherein the first and second memory materials comprise a chalcogenide material.

4. The memory cell of claim 1 , wherein the substrate comprises a conductive region in electrical contact with the structure.

5. The memory cell of claim 1 , wherein the structure comprises a pillar.

6. The memory cell of claim 5 , wherein the pillar is substantially square and comprises four corners.

7. The memory cell of claim 5 , wherein the pillar contact is substantially rectangular and comprises four corners.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: MICRON TECHNOLOGY, INC.
To: ROUND ROCK RESEARCH, LLC
Reel/Frame 023786/0416 →