Semiconductor device having a fuse and a low heat conductive section for blowout of fuse
View Patent ↗In a semiconductor device having a fuse 11 which makes connection between a first interconnection 10 and a second interconnection 12 , and a first low heat-conductive section 13 which makes connection between the first interconnection 10 and a third interconnection 14 at a site of the first interconnection 10 where the fuse 11 is not connected, the first low heat-conductive section 13 is fabricated from a material having a heat conductivity lower than that of the material to form the first interconnection 10 . When the fuse is blown with the laser beam irradiation, the heat dissipation through the heat conduction along the fuse and the interconnection is to be suppressed, and thereby a satisfactory disconnection at the fuse is to be achieved.
1. A semiconductor device, comprising:
a first wire having a first portion and a second portion different from said first portion, said first wire having a first heat conductivity;
a fuse connected to said first portion of said first wire;
said fuse having a second heat conductivity lower than said first heat conductivity;
a first conductive portion connected to said second portion of said first wire, said first conductive portion having a third heat conductivity lower than said first heat conductivity;
a second wire having a first part connected to said fuse; and
a third wire connected to said first conductive portion.
2. The device as claimed in claim 1 , said device further comprising:
a second conductive portion connected to a second part of said second wire, and
a fourth wire connected to said second conductive portion and having a fourth heat conductivity lower than said first heat conductivity.
3. The device as claimed in claim 2 , wherein said first and fourth wires are formed at a first layer level and said second and third wires are formed on a second layer level.
4. The device as claimed in claim 2 , wherein said first, second, third and fourth wires are formed at the same layer level.
5. The device as claimed in claim 1 , wherein said first conductive portion has a plurality of through contact plugs.
6. The device as claimed in claim 1 , said device further comprising a second conductive portion connected to a third portion of said wire, said third portion different from said first and second portions; and a fourth wire connected to said second conductive portion.
7. The device as claimed in claim 1 , wherein said first, second and third wires are formed at the same layer level.