IP Library Patent Application 11011962
Patent Application
App. No. 11/011,962

Flash memory system and erase method thereof

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Quick Facts
Patent No.
US None
App. No.
11/011,962
Abstract

A flash memory system in which data for erase stored in a flash memory for main storage is stored in a flash memory for erase information storage, the data for erase stored in the flash memory for main storage is erased firstly, and the data for erase stored in the flash memory for erase information storage is then erased secondarily, and erase method thereof are provided. Twice erase commands are performed, unlike an existing flash memory system in which data is erased at once. Therefore, it is possible to prevent data from being erased by mistake when the data is stored.

Claims (14)

1 . An erase method of a flash memory system including at least one flash memory for main storage, at least one flash memory for erase information storage, and a controller for controlling the flash memory for main storage and the flash memory for erase information storage, comprising:

requesting a temporary erase command for temporarily erasing data to the flash memory for main storage;

determining whether a free space in which data can be stored exists in the flash memory for erase information storage;

if it is determined that the free space exists in the flash memory for erase information storage, storing data for erase, which is stored in the flash memory for main storage, in the flash memory for erase information storage;

firstly erasing the data for erase, which is stored in the flash memory for main storage;

requesting a complete erase command for completely erasing data to the flash memory for erase information storage; and

secondarily completely erasing the data for erase, which is stored in the flash memory for, erase information storage.

2 . The erase method as claimed in claim 1 , further comprising: if it is determined that the free space does not exist in the flash memory for erase information storage, directly requesting the complete erase command to the flash memory for erase information storage and then completely erasing the data for erase, which is stored in the flash memory for erase information storage, whereby temporary erase is made possible.

3 . A flash memory system, comprising:

at least one flash memory for main storage to which a temporary erase command for temporarily erasing data is requested;

at least one flash memory for erase information storage to which a complete erase command for completely erasing data is requested; and

a controller for determining whether a free space in which data can be stored exists in the flash memory for erase information storage,

wherein if it determined that the free space exists in the flash memory for erase information storage, the controller requests the temporary erase command to the flash memory for main storage, stores data for erase, which is stored in the flash memory for main storage, in the flash memory for erase information storage, firstly erases the data for erase, which is stored in the flash memory for main storage, requests the complete erase command to the flash memory for erase information storage, and then secondarily erases the data for erase, which is stored in the flash memory for erase information storage.

4 . The flash memory system as claimed in claim 3 , wherein, if it determined that the free space does not exist in the flash memory for erase information storage, the controller directly requests the complete erase command to the flash memory for erase information storage and completely erases the data for erase, which is stored in the flash memory for erase information storage, whereby temporary erase is possible.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2006
From: HYNIX SEMICONDUCTOR INC.
To: HYNIX SEMICONDUCTOR INC.; STMICROELECTRONICS S.R.L.
Reel/Frame 018207/0057 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2005
From: CHANG, SEUNG HO
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 015895/0620 →