Water-soluble material, chemically amplified resist and pattern formation method using the same
View Patent ↗A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
1. A pattern formation method comprising the steps of:
forming a chemically amplified resist film on a substrate;
forming, on said resist film, a water-soluble film including a water-soluble polymer, an acid generator and an inclusion compound for incorporating said acid generator;
performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film; and
developing said resist film after removing said water-soluble film after the pattern exposure.
2. The pattern formation method of claim 1 , wherein said inclusion compound is cyclic oligosaccharide.
3. The pattern formation method of claim 2 , wherein said cyclic oligosaccharide is cyclodextrin.
4. The pattern formation method of claim 3 , wherein said cyclodextrin is α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin or δ-cyclodextrin.
5. The pattern formation method claim 1 , wherein said water-soluble polymer is polyvinyl alcohol, polyvinyl pyrrolidone, polystyrene sulfonic acid, polyacrylic acid or pullulan.
6. The pattern formation method of claim 1 , wherein said water-soluble material further includes a surface active agent.
7. The pattern formation method of claim 6 , wherein said surface active agent is a cationic surface active agent or a nonionic surface active agent.
8. The pattern formation method of claim 7 , wherein said cationic surface active agent is cetylmethylammonium chloride, stearylmethylammonium chloride, cetyltrimethylammonium chloride, stearyltrimethylammonium chloride, distearyldimethylammonium chloride, stearyldimethylbenzylammonium chloride, dodecylmethylammonium chloride, dodecyltrimethylammonium chloride, benzylmethylammonium chloride, benzyltrimethylammonium chloride or benzalkonium chloride.
9. The pattern formation method of claim 7 , wherein said nonionic surface active agent is nonyl phenol ethoxylate, octylphenyl polyoxyethylene ether, lauryl polyoxyethylene ether, cetyl polyoxyethylene ether, sucrose fatty ester, polyoxyethylene lanolin fatty ester, polyoxyethylene sorbitan fatty ester, polyoxyethylene glycol mono fatty ester, fatty monoethanolamide, fatty dietanolamide or fatty triethanolamide.
10. The pattern formation method of claim 1 , wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, ArKr laser, Ar 2 laser, extreme UV of a wavelength band not shorter than 1 nm and not longer than 30 nm, or electron beams.
11. A pattern formation method comprising the steps of:
forming a chemically amplified resist film on a substrate;
forming, on said resist film, a water-soluble film including a water-soluble polymer, an acid generator and an inclusion compound for incorporating said acid generator;
performing pattern exposure by selectively irradiating said resist film with exposing light through said water-soluble film; and
developing said resist film and removing said water-soluble film after the pattern exposure.
12. The pattern formation method of claim 11 , wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2 laser, ArKr laser, Ar 2 laser, extreme UV of a wavelength band not shorter than 1 nm and not longer than 30 nm, or electron beams.