IP Library Granted Patent US 7,262,442
Granted Patent B2
US 7,262,442 · App. 11/013,972 · Granted Aug 28, 2007

Triac operating in quadrants Q1 and Q4

Assignee: STMicroelectronics S.A.
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Quick Facts
Patent No.
US 7,262,442
App. No.
11/013,972
Granted
Aug 28, 2007
Kind
B2
Abstract

A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected to a control terminal and the second portion being connected with said region to the main front surface terminal.

Claims (28)

1. A triac comprising on its front surface an autonomous starting well of a first conductivity type containing a region of a second conductivity type arranged to divide the starting well, in top view, into a first and a second well portion, the first portion being connected to a control terminal and the second portion being connected with said region to a main front surface terminal.

2. The triac of claim 1 , wherein the starting well is an auxilliary well that is arranged in the immediate vicinity of a main front surface well.

3. A triac, comprising;

a first well coupled to a first terminal of the triac; and

a second well coupled to the first terminal of the triac and to a control terminal of the triac;

wherein the second well comprises a second region of a first conductivity type and the control terminal of the triac corn rises a second metallization that contacts the second region of the first conductivity type;

wherein the first terminal of the triac further comprises a third metallization that contacts the second region of the first conductivity type.

4. The triac of claim 3 , wherein the first well comprises a first region of a first conductivity type and the first terminal of the triac comprises a first metallization that contacts the first region of the first conductivity type.

5. The triac of claim 4 , wherein the first conductivity type is type P.

6. The triac of claim 3 , wherein the second well further comprises a first region of a second conductivity type that contacts the third metallization.

7. The triac of claim 6 , wherein the first region of the second conductivity type is disposed within the second region of the first conductivity type.

8. The triac of claim 6 , wherein the first region of the second conductivity type contacts the third metallization closer to the second metallization than the second region of the first conductivity type contacts the third metallization.

9. The triac of claim 6 , wherein the first region of the second conductivity type contacts the third metallization approximately along a diagonal of an approximately rectangular region formed by the second region of the first conductivity type.

10. The triac of claim 3 , wherein the first well is a main well of the triac and the second well is an auxiliary starting well of the triac.

11. The triac of claim 3 , wherein the second well is an autonomous starting well of a first conductivity type comprising a region of a second conductivity type arranged to divide the starting well, in top view, into a first and second well portion, the first portion being coupled to a control terminal and the second portion being coupled with the second region to a main front surface terminal.

12. A triac, comprising:

a control terminal;

a first well coupled to a first terminal of the triac; and

a second well coupled to the first terminal of the triac such that the second well turns on the triac in response to a positive voltage being applied to the control terminal;

wherein the second well comprises a second region of a first conductivity type and the control terminal of the triac comprises a second metallization that contacts the second region of the first conductivity type;

wherein the first terminal of the triac further comprises a third metallization that contacts the second region of the first conductivity type.

13. The triac of claim 12 , wherein the first well comprises a first region of a first conductivity type and the first terminal of the triac comprises a first metallization that contacts the first region of the first conductivity type.

14. The triac of claim 12 , wherein the second well further comprises a first region of a second conductivity type that contacts the third metallization.

15. The triac of claim 14 , wherein the first region of the second conductivity type is disposed within the second region of the first conductivity type.

16. The triac of claim 14 , wherein the first region of the second conductivity type contacts the third metallization closer to the second metallization than the second region of the first conductivity type contacts the third metallization.

17. The triac of claim 14 , wherein the first region of the second conductivity type contacts the third metallization approximately along a diagonal of an approximately rectangular region formed by the second region of the first conductivity type.

18. The triac of claim 12 , wherein the first well is a main well of the triac and the second well is an auxiliary starting well of the triac.

19. The triac of claim 12 , wherein the second well is an autonomous starring well of a first conductivity type comprising a region of a second conductivity type arranged to divide the starting well, in top view, into a first and second well portion, the first portion being coupled to a control terminal and the second portion being coupled with the second region to a main front surface terminal.

Assignments (2)
CHANGE OF NAME Recorded Jan 21, 2024
From: STMICROELECTRONICS SA
To: STMICROELECTRONICS FRANCE
Reel/Frame 066357/0531 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2004
From: MENARD, SAMUEL
To: STMICROELECTRONICS, S.A.
Reel/Frame 016103/0402 →
Priority Claims (1)
FR 03 51138 · Dec 19, 2003 · national
Continuity (1)
Related Publication 20050133815A1 · Jun 23, 2005