IP Library Granted Patent US 7,109,060
Granted Patent B2
US 7,109,060 · App. 11/014,572 · Granted Sep 19, 2006

Manufacturing method of semiconductor device, semiconductor device, circuit substrate and electronic equipment

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Quick Facts
Patent No.
US 7,109,060
App. No.
11/014,572
Granted
Sep 19, 2006
Kind
B2
Abstract

A method of manufacturing a semiconductor device is provided. The method includes embedding and forming a coupling terminal as an external electrode of an electronic circuit on an active surface side of a substrate having an active surface formed with a plurality of electronic circuits, exposing a part of the coupling terminal by polishing a back surface side of the substrate, mounting a semiconductor chip on the back surface side of the substrate via the coupling terminal, sealing the semiconductor chip mounted on the substrate by a sealing material, and cutting the substrate for every forming area of each electronic circuit and dividing it into a plurality of semiconductor devices.

Claims (17)

1. A method of manufacturing a semiconductor device, comprising:

providing a substrate having an active surface side formed with a plurality of electronic circuits and a back surface side positioned on an opposite side of the substrate from the active surface side;

embedding a coupling terminal on the active surface side of the substrate such that a protruding portion of the coupling terminal is embedded into the active surface of the substrate, the coupling terminal forming an external electrode of one of the electronic circuits;

exposing a part of the protruding portion of the coupling terminal by polishing the back surface side of the substrate;

mounting a semiconductor chip on the back surface side of the substrate via the coupling terminal;

sealing the semiconductor chip mounted on the substrate with a sealing material; and

cutting the substrate along at least the one electronic circuit to yield the semiconductor device.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein the cutting step further comprises cutting from the active surface side of the substrate.

3. The method of manufacturing a semiconductor device according to claim 2 , wherein the cutting step further comprises dicing the substrate using the sealing material as a supporting material.

4. The manufacturing method of manufacturing a semiconductor device according to claim 1 , further comprising a step of collectively testing each semiconductor chip prior to the cutting step.

5. The method of manufacturing a semiconductor device according to claim 1 , further comprising:

testing each electronic circuit formed on the active surface prior to the mounting step; and

wherein the mounting step further comprises mounting the semiconductor chip only with respect to the electronic circuit that proves non-defective in the testing step.

6. The method of manufacturing a semiconductor device according to claim 5 , wherein the mounting step further comprises mounting a dummy chip with respect to the electronic circuit that proves defective in the testing step.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein:

the mounting step further comprises depositing a plurality of the semiconductor chips on the back surface side of the substrate via a through electrode provided in each of the plurality of semiconductor chips.

8. The method of manufacturing a semiconductor device according to claim 1 , further comprising forming a rearrangement wiring on the active surface side of the substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SEIKO EPSON CORPORATION
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028153/0654 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2004
From: FUKAZAWA, MOTOHIKO
To: SEIKO ESPON CORPORATION
Reel/Frame 016104/0089 →