Semiconductor component comprising areas with a high platinum concentration
A structure formed in a semiconductor substrate having at least one area having a high concentration of atoms of a metal such as platinum or gold, in which the area is surrounded with at least one first trench penetrating into the substrate.
1. A structure formed in a semiconductor substrate comprising at least one area having a high concentration of atoms of a metal, wherein said area is surrounded with at least one first trench penetrating into the substrate, the number n, the depth p, the spacing e, and the width t of trenches being a function of the depth 1 ′ of the area and the ratio k between the surface diffusion speed and the volume diffusion speed of the said metal according to the following relation: (2p+e+t)*n>k*1′.
2. The structure of claim 1 , wherein said at least one first trench is filled with an insulator.
3. The structure of claim 2 , wherein said insulator comprises silicon oxide.
4. The structure of claim 1 , wherein said at least one first trench has a depth ranging between 5 and 50 μm.
5. The structure of claim 1 , further comprising at least one second trench in the substrate surface opposite to that comprising said at least one first trench, and substantially opposite thereto.
6. The structure of claim 1 , wherein said area corresponds to all or part of the semiconductor areas constitutive of a diode.
7. The structure of claim 1 , wherein said at least one first trench is formed in an insulating wall insulating a component comprising said area from other components.
8. The structure of claim 1 , comprising a fast diode and of a slow diode formed of a semiconductor region of a first type formed in a layer of a second type, said at least one trench being formed inside the periphery of said region.
9. The A method for forming, in a semiconductor substrate, an area having a high concentration of atoms of a metal, comprising:
forming at least one first trench penetrating into the substrate around said area, the number n, the depth p, the spacing e, and the width t of trenches being a function of the depth 1 ′ of the area and the ratio k between the surface diffusion speed and the volume diffusion speed of the said metal according to the following relation: (2p+e+t)*n>k*1′;
depositing said metal substantially above the central portion of said area; and
diffusing the metal into all of said area.
10. The structure of claim 1 , wherein said metal comprises one of platinum and gold.
11. The structure of claim 1 , wherein the at least one first trench comprises multiple trenches.
12. The structure of claim 9 , wherein said metal comprises platinum.