Thin film transistor and method of fabricating the same

1. A thin film transistor, comprising:

an insulating substrate; and

a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate,

wherein the gate insulating layer comprises a filtering oxide layer having a thickness of 1 to 20 Å and the semiconductor layer is formed of a polysilicon layer crystallized by a super grain silicon (SGS) crystallization technique.

2. The transistor of claim 1 , wherein the gate insulating layer further comprises a single or dual layer of a silicon oxide layer or/and a silicon nitride layer.

3. The transistor of claim 1 , wherein the filtering oxide layer filters a diffusion of a metal catalyst so that a small amount of the metal catalyst is diffused.

4. The transistor of claim 1 , wherein the filtering oxide layer is deposited by a CVD or PVD technique or is an oxide layer formed by a UV oxidation technique, a thermal oxidation technique, an oxygen plasma oxidation technique or a natural oxidation technique.

5. The transistor of claim 1 ,

wherein the filtering oxide layer is a filtering natural oxide layer.

6. The transistor of claim 5 , wherein the gate insulating layer further comprises a single or dual layer of a silicon oxide layer or/and a silicon nitride layer.

7. The transistor of claim 5 , wherein the filtering natural oxide layer filters a diffusion of a metal catalyst so that a small amount of the metal catalyst is diffused.

8. The transistor of claim 5 , wherein the filtering natural oxide layer is naturally formed natural oxide layer that a surface of the amorphous silicon layer is exposed to the air or a vacuum.