Patent Assignment
Reel/Frame 028868/0387
Merger
Recorded: 2012-08-29
Pages: 12
Assignor
SAMSUNG MOBILE DISPLAY CO., LTD.
Executed: 2012-07-02
Assignee
SAMSUNG DISPLAY CO., LTD.
95, SAMSUNG 2 RO, GIHEUNG-GU, GYEONGGI-DO, YONGIN-CITY, KOREA, REPUBLIC OF
Covered Properties
(50)
Donor Substrate for Laser Induced Thermal Imaging Method, Method of Fabricating the Donor Substrate, and Method of Fabricating Organic Light Emitting Display Using the Donor Substrate
Methods of Fabricating Organic Light Emitting Display and Donor Substrate
Thin Film Transistor and Method of Fabricating the Same
Method of Fabricating Thin Film Transistor
Thin Film Transistor and Method of Fabricating the Same
Organic Light Emitting Display with Circuit Measuring Pad and Method of Fabricating the Same
Thin Film Transistor and Method of Fabricating the Same
White light emitting organic electroluminescent device and organic electroluminescent display having the same
Application:
11/019,461 →
Publication:
US 2005/0164033
Laser Induced Thermal Imaging Apparatus
Laser Irradiation Apparatus and Method of Fabricating Organic Light Emitting Display Using the Same
Method of Fabricating Organic Light Emitting Display
Method of Fabricating Organic Light Emitting Display
Lamination Apparatus and Laser-Induced Thermal Imaging Method Using the Same
Laser Induced Thermal Imaging Apparatus, Laser Induced Thermal Imaging Method Using the Apparatus, and Method of Fabricating Organic Light Emitting Display Using the Apparatus
Method of Fabricating Organic Light Emitting Display
Laser Irradiation Apparatus and Method of Fabricating Organic Light Emitting Display Using the Same
An Organic Light Emitting Device Having Metal Electrodes in a Groove with Steps in a Substrate
Laser induced thermal imaging method and a method of fabricating organic light emitting display
Method for Manufacturing Organic El Device Having Conductive Interface Pad
Method of Fabricating Thin Film Transistor with Multiple Gates Using Super Grain Silicon Crystallization
Thin Film Transistor with Multiple Gates Fabricated Using Super Grain Silicon Crystallization
Flat Panel Display
Method for Encapsulating Organic Electroluminescent Device and an Organic Electroluminescent Panel Using the Same
Organic Electro Luminescence Display Including an Insulating Layer Having Contact Holes in a Region Where a Power Line Overlaps an Electrode
Organic Electroluminescent Display Device
Methods of Manufacturing Thin Film Transistors Using Masks to Protect the Channel Regions from Impurities While Doping a Semiconductor Layer to Form Source/Drain Regions
Apparatus and Method for Inspecting Poly-Silicon
Thin Film Transistor Having Ldd Structure
Ir Compound and Organic Electroluminescent Device Using the Same
Organic Electroluminescent Display Device
Active Matrix Type Organic Electroluminescent Device
Organic Field-Effect Transistor, Flat Panel Display Device Including the Same, and a Method of Manufacturing the Organic Field-Effect Transistor
Organic Electroluminescence Display Device
Flat Panel Display with High Capacitance and Method of Manufacturing the Same
Flat Panel Display and Method for Fabricating the Same
Method for Fabricating Active-Matrix Display Device
Flat Display Device Having a Covering Film and Interconnection Line Inside a Patterned Portion Completely Covered by Only One Sealant
Electroluminescence Display Device Having Electrode Power Supply Line
Vertical Field-Effect Transistor, Method of Manufacturing the Same, and Display Device Having the Same
Top-Emission Organic Light-Emitting Display Device
Flat Panel Display Device Having Molybdenum Conductive Layer
Method of Fabricating Semiconductor Device and Semiconductor Fabricated by the Same Method
Top-Emission Type Organic Electroluminescence Display Device and Method for Fabricating the Same
Flat Display Device
Capacitor and Light Emitting Display Using the Same
Thin Film Transistor and Organic Electroluminescence Display Using the Same
Fluorene-Based Compound and Organic Electroluminescent Display Device Using the Same
Flat Panel Display
Thin Film Transistor with Multiple Gates Using Metal Induced Lateral Crystallization and Method of Fabricating the Same
Thin Film Transistor with Multiple Gates Using Metal Induced Lateral Crystallization and Method of Fabricating the Same