Thin film transistor and method of fabricating the same
View Patent ↗A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The method includes: forming a first capping layer on a metal catalyst layer; forming and patterning a second capping layer on the first capping layer; forming an amorphous silicon layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. The crystallization catalyst diffuses at a uniform low concentration to control a position of a seed formed of the catalyst such that a channel region in the polysilicon layer is close to a single crystal. Therefore, the characteristics of the thin film transistor device may be improved and uniformed.
1. A thin film transistor, comprising:
a substrate;
a metal catalyst layer formed on and across the entire substrate;
a first capping layer formed on and across the entire metal catalyst layer;
a second capping layer pattern formed on and across less than the entire first capping layer; and
a semiconductor layer pattern formed on the second capping layer pattern and crystallized by a metal catalyst of the metal catalyst layer,
wherein the metal catalyst layer is between the substrate and the first capping layer, the first capping layer is between the metal catalyst layer and the second capping layer pattern, and the second capping layer pattern is between the first capping layer and the semiconductor layer pattern, and
wherein the semiconductor layer pattern comprises a channel layer and the channel layer is formed apart from an end of the second capping layer pattern by 1 to 5 μm.
2. The thin film transistor according to claim 1 , wherein the first capping layer is formed of any one of a silicon nitride layer and a silicon oxide layer.
3. The thin film transistor according to claim 1 , wherein the second capping layer pattern is formed of any one of a silicon nitride layer and a silicon oxide layer.
4. The thin film transistor according to claim 1 , wherein the second capping layer pattern is thicker than the first capping layer.
5. The thin film transistor according to claim 1 , wherein the second capping layer pattern has a higher density than the first capping layer.
6. The thin film transistor according to claim 1 , wherein the second capping layer pattern comprises a plurality of portions having an interval of 1 to 50 μm therebetween.
7. The thin film transistor according to claim 1 , wherein the metal catalyst is formed of nickel (Ni).
8. The thin film transistor according to claim 1 , wherein the first capping layer is a metal catalyst diffusible layer, and the second capping layer pattern is a metal catalyst non-diffusible layer.
9. A thin film transistor, comprising:
a substrate;
a metal catalyst layer formed on and across the entire substrate;
a first capping layer pattern formed on and across less than the entire metal catalyst layer;
a second capping layer formed on the first capping layer pattern and across the entire substrate; and
a semiconductor layer pattern formed on the second capping layer and crystallized by a metal catalyst of the metal catalyst layer,
wherein the metal catalyst layer is between the substrate and the first capping layer pattern, the first capping layer pattern is between the metal catalyst layer and the second capping layer, and the second capping layer is between the first capping layer pattern and the semiconductor layer pattern, and
wherein the semiconductor layer pattern comprises a channel layer and the channel layer is formed apart from an end of the first capping layer pattern by 1 to 5 μm.
10. The thin film transistor according to claim 9 , wherein the first capping layer pattern is formed of any one of a silicon nitride layer and a silicon oxide layer.
11. The thin film transistor according to claim 9 , wherein the second capping layer is formed of any one of a silicon nitride layer and a silicon oxide layer.
12. The thin film transistor according to claim 9 , wherein the first capping layer pattern is thicker than the second capping layer.
13. The thin film transistor according to claim 9 , wherein the first capping layer pattern has a higher density than the second capping layer.
14. The thin film transistor according to claim 9 , wherein the first capping layer pattern comprises a plurality of portions having an interval of 1 to 50 μm therebetween.
15. The thin film transistor according to claim 9 , wherein the metal catalyst is formed of nickel (Ni).
16. The thin film transistor according to claim 9 , wherein the first capping layer pattern is a metal catalyst non-diffusible layer, and the second capping layer is a metal catalyst diffusible layer.