Laser induced thermal imaging method and a method of fabricating organic light emitting display
View Patent ↗A laser induced thermal imaging method includes preparing a donor element and a substrate; facing a transfer layer of the donor element to the substrate and then patterning the transfer layer onto the substrate; and annealing the patterned substrate.
1. A laser induced thermal imaging method, comprising:
preparing a donor element and a substrate;
facing a transfer layer of the donor element to the substrate and then patterning the transfer layer onto the substrate; and
annealing the patterned substrate, wherein the annealing process is performed in an inert gas atmosphere,
wherein the annealing process at the inert gas atmosphere is performed after controlling water vapor density in the inert gas to be more than 0 ppm and less than 10 ppm, and
wherein annealing the patterned substrate is performed before forming a layer on the patterned transfer layer.
2. The method of claim 1 , wherein the transfer layer is a monomer organic layer.
3. The method of claim 1 , wherein the donor element is a framed one.
4. The method of claim 1 , further comprising, laminating the donor element and the substrate before patterning the transfer layer.
5. The method of claim 1 , wherein the transfer layer is a light emitting layer of an OLED.
6. The method of claim 1 , wherein the annealing process at the inert gas atmosphere is performed after controlling oxygen density in the inert gas to less than 50 ppm.
7. The method of claim 1 , wherein the annealing process at the inert gas atmosphere is performed in a range of a temperature of less than a glass transition temperature of the transfer layer.
8. A laser induced thermal imaging method, comprising:
preparing a donor element and a substrate;
facing a transfer layer of the donor element to the substrate and then patterning the transfer layer onto the substrate; and
annealing the patterned substrate at an inert gas atmosphere,
wherein the annealing process at the inert gas atmosphere is performed after controlling oxygen density in the inert gas to be more than 0 ppm and less than 50 ppm, and
wherein annealing the patterned substrate is performed before forming a layer on the patterned transfer layer.
9. The method of claim 8 , wherein the annealing process at the inert gas atmosphere is performed after controlling water vapor density in the inert gas to be less than 10 ppm.
10. The method of claim 8 , wherein the annealing process at the inert gas atmosphere is performed in a range of a temperature of less than a glass transition temperature of the transfer layer.
11. The method of claim 8 , wherein the donor element is a framed one.
12. The method of claim 8 , further comprising, laminating the donor element and the substrate before patterning the transfer layer.
13. The method of claim 8 , wherein the transfer layer is a light emitting layer of an OLED.
14. A laser induced thermal imaging method, comprising:
preparing a donor element and a substrate;
facing a transfer layer of the donor element to the substrate and then patterning the transfer layer onto the substrate, at an inert gas atmosphere; and
annealing the patterned substrate at an inert gas atmosphere,
wherein the annealing process at the inert gas atmosphere is performed after controlling water vapor density in the inert gas to be more than 0 ppm and less than 10 ppm, and
wherein annealing the patterned substrate is performed before forming a layer on the patterned transfer layer.
15. The method of claim 14 , wherein the annealing process at the inert gas atmosphere is performed after controlling oxygen density in the inert gas to less than 50 ppm.
16. The method of claim 14 , wherein the annealing process at the inert gas atmosphere is performed in a range of a temperature of less than a glass transition temperature of the transfer layer.
17. The method of claim 14 , wherein the donor element is a framed one.
18. The method of claim 14 , further comprising, laminating the donor element and the substrate before patterning the transfer layer.
19. The method of claim 14 , wherein the transfer layer is a light emitting layer of an OLED.
20. The method of claim 19 , wherein the transfer layer includes one or more selected from a group comprised of a hole injecting layer, a hole transporting layer, a hole blocking layer, and an electron injecting layer.
21. A method of fabricating an organic light emitting display, comprising:
forming a transfer layer on a donor element;
forming arrays having thin film transistors, capacitors and lines on a substrate;
forming pixel electrodes connected to each of thin film transistors;
patterning the transfer layer on the substrate after laminating the donor element and the substrate;
annealing the patterned transfer layer; and
forming an opposite electrode on the annealed transfer layer, wherein the annealing process is performed in an inert gas atmosphere,
wherein the annealing process at the inert gas atmosphere is performed after controlling water vapor density in the inert gas to be more than 0 ppm and less than 10 ppm, or
wherein the annealing process at the inert gas atmosphere is performed after controlling oxygen density in the inert gas to be more than 0 ppm and less than 50 ppm.
22. The method of claim 21 , wherein the patterning process is performed at an inert gas atmosphere.
23. The method of claim 21 , wherein the annealing process at the inert gas atmosphere is performed in a range of a temperature of less than a glass transition temperature of the transfer layer.