Method for fabricating active-matrix display device
View Patent ↗A method for fabricating a display device having a thin film transistor. When forming wirings and electrode patterns made of a metal layer on a mother substrate, the metal wiring and the electrode patterns are patterned and, simultaneously, the metal layer within a predetermined range of the outermost region of the mother substrate is removed. Removing the metal layer in the outermost region of the mother substrate when patterning the metal layer may obtain stability in the process of fabricating the display device and lower a device failure rate, thereby increasing productivity.
1. A method for fabricating a display device having a plurality of gate lines and data lines on a mother substrate to define a plurality of pixel portions, a plurality of gate pad portions and data pad portions coupled to the plurality of gate lines and data lines, respectively, and at least one thin film transistor arranged in each pixel portion, the method comprising:
forming a metal pattern in the pixel portion simultaneously with removing a metal layer along an edge of the mother substrate.
2. The method of claim 1 , wherein the metal layer to be removed is within 10 mm from the edge of the mother substrate.
3. The method of claim 1 , wherein the metal layer to be removed is within 5 mm from the edge of the mother substrate.
4. The method of claim 1 , further comprising removing the metal layer with an etching process after forming a photoresist pattern.
5. The method of claim 4 , wherein the etching process is a wet etching process or a dry etching process.
6. The method of claim 1 , wherein forming the metal pattern includes forming a gate electrode, a gate line, a gate pad electrode, and a storage electrode.
7. The method of claim 1 , wherein forming the metal pattern includes forming a source electrode, a drain electrode, a data line, a data pad electrode and a power line.
8. The method of claim 1 , wherein forming the metal pattern includes forming a reflective electrode.
9. The method according to claim 1 , wherein the metal pattern comprises Mo, Ti, Ta, Al, Cr, MoW, or AlNd.
10. The method according to claim 1 , wherein the pixel portion includes a liquid crystal cell or an organic electroluminescence element.
11. The method according to claim 1 , wherein the metal layer that exists along the edge of the mother substrate is simultaneously removed while forming the metal patterns by an etching process after forming a photoresist pattern using an additional mask.