High-purity alkali etching solution for silicon wafers and use thereof
View Patent ↗A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution contains sodium hydroxide containing 1 ppb or less of the elements Cu, Ni, Mg, and Cr, 5 ppb or less of the elements Pb and Fe, 10 ppb or less of the elements Al, Ca, and Zn, and 1 ppm or less of chloride, sulfate, phosphate, and nitrogen compounds other than nitrate and nitrite, and containing 0.01 to 10 wt % of nitrate and/or nitrite.
1. A method of production of a silicon wafer, comprising providing a silicon wafer,
etching at least one surface of said silicon wafer with an aqueous etching solution comprising
40 to 60 wt % of high-purity sodium hydroxide, and containing
1 ppb or less of each of the elements Cu, Ni, Mg, and Cr,
5 ppb or less of each of the elements Pb and Fe,
10 ppb or less of each of the elements Al, Ca, and Zn, and
1 ppm or less of chloride, sulfate, phosphate, and nitrogen compounds other than nitrate and nitrite; and further comprising,
0.01 to 10 wt % of nitrate.
2. The method of claim 1 , wherein the surface of said silicon wafer after etching contains 1×10 10 atoms/cm 2 or less of heavy metals after etching.
3. The method of claim 1 , wherein said silicon wafer after etching has a degradation of surface flatness Δ TTV of 1 μm or less.
4. The method of claim 2 , wherein said silicon wafer after etching has a degradation of surface flatness Δ TTV of 1 μm or less.
5. The method of claim 2 , wherein said heavy metals are one or more of Cu, Ni, Cr, Fe, Zn, and Pb.
6. The process of claim 1 , wherein nitrate is present in a total amount of 0.05 to 10 weight percent.
7. The process of claim 1 , wherein sodium hydroxide is present in an amount of from 50 to 55 weight percent based on the total weight of the alkali etching solution.
8. The process of claim 1 , wherein the alkali etching solution further comprises from 0.01 to 20 weight percent of salts other than nitrate based on the weight of the alkali etching solution.
9. The process of claim 8 , wherein at least a portion of the salts other than nitrate are formed in situ by addition of an acid.
10. The process of claim 1 , wherein said etching is performed after lapping of the wafer.
11. A method of production of a silicon wafer, comprising providing a silicon wafer,
etching at least one surface of said silicon wafer with an aqueous etching solution comprising
40 to 60 wt % of high-purity sodium hydroxide, and containing
not more than 1 ppb of each of the elements Cu, Ni, Mg, and Cr,
not more than 5 ppb of each of the elements Pb and Fe,
not more than 10 ppb of each of the elements Al, Ca, and Zn, and
not more than 1 ppm of chloride, sulfate, phosphate, and nitrogen compounds other than nitrate and nitrite; and further comprising,
0.01 to 10 wt % of nitrate.
12. A method of production of a silicon wafer, comprising providing a silicon wafer,
providing an aqueous etching solution comprising:
40 to 60 wt % of high-purity sodium hydroxide, and containing
1 ppb or less of each of the elements Cu, Ni, Mg, and Cr,
5 ppb or less of each of the elements Pb and Fe,
10 ppb or less of each of the elements Al, Ca, and Zn, and
1 ppm or less of chloride, sulfate, phosphate, and nitrogen compounds other than nitrate and nitrite; and further comprising,
0.01 to 10 wt % of nitrate; and
etching at least one surface of said silicone wafer with the aqueous etching solution.