Patent Assignment
Reel/Frame 056719/0881
Change of Address
Recorded: 2021-06-30
Pages: 34
Assignor
SILTRONIC AG
Executed: 2020-03-12
Assignee
SILTRONIC AG
EINSTEINSTRASSE 172, 81677 MÜNCHEN, GERMANY
Covered Properties
(221)
Process for Producing a Semiconductor Wafer
Method and Apparatus for Doping a Melt with a Dopant
Semiconductor Wafer Made from Silicon and Method for Producing the Semiconductor Wafer
Process for the Double-Side Polishing of Semiconductor Wafers and Carrier for Carrying Out the Process
Single-Crystal Rod and Process for Its Production
Double-Side Polishing Process with Reduced Scratch Rate and Device for Carrying Out the Process
Process for the Surface Polishing of Silicon Wafers
Process and Apparatus for Producing a Silicon Single Crystal
Method for Cutting Slices from a Workpiece
Process for Material-Removing Machining of Both Sides of Semiconductor Wafers
Silicon Single Crystal Produced by Crucible-Free Float Zone Pulling
Method and Device for the Production of a Single Crystal
Semiconductor Wafer with Improved Local Flatness, and Method for Its Production
Silicon Semiconductor Substrate and Process for Producing the Same
Silicon Semiconductor Substrate and Preparation Thereof
Silicon Semiconductor Substrate and Method for Production Thereof
Single Crystal Production Method
Double-Sided Polishing Process for Producing a Multiplicity of Silicon Semiconductor Wafers
Seed Crystal for Production of Silicon Single Crystal and Method for Production of Silicon Single Crystal
Process for the Heat Treatment of a Silicon Wafer, and Silicon Wafer Produced
Film or Layer Made of Semi-Conductive Material and Method for Producing Said Film or Layer
Two Layer Lto Temperature Oxide Backside Seal for a Wafer
Process for Machining a Wafer-Like Workpiece
Process for Producing a Silicon Single Crystal Which Is Doped with Highly Volatile Foreign Substances
Soi Wafer and Process for Producing It
Coated Semiconductor Wafer, and Process and Device for Producing the Semiconductor Wafer
Silicon Wafer and Process for Producing It
Method for Supply of Constant-Concentration Ozonated Water
High-Purity Alkali Etching Solution for Silicon Wafers and Use Thereof
Process for Producing a Semiconductor Wafer
Device for the Simultaneous Double-Side Grinding of a Workpiece in Wafer Form
Soi Wafer and Method for Producing It
Semiconductor Substrate and Process for Producing It
Process for Producing Doped Semiconductor Wafers from Silicon, and the Wafers Produced Thereby
Multilayer Structure Comprising a Substrate and a Layer of Silicon and Germanium Deposited Heteroepitaxially Thereon, and a Process for Producing It
Coated Semiconductor Wafer, and Process and Apparatus for Producing the Semiconductor Wafer
Method for Removing Material from a Semiconductor Wafer
Film or Layer of Semiconducting Material, and Process for Producing the Film or Layer
Silicon Wafer and Process for the Heat Treatment of a Silicon Wafer
Process for Producing Silicon Semiconductor Wafers with Defined Defect Properties, and Silicon Semiconductor Wafers Having These Defect Properties
Silicon Wafer and Process for Producing It
Method for Machining a Semiconductor Wafer on Both Sides in a Carrier, Carrier, and a Semiconductor Wafer Produced by the Method
Semiconductor Wafer and Process for Producing a Semiconductor Wafer
Silicon Single Crystal, and Process for Producing It
Method and Device for the Production of a Silicon Single Crystal, Silicon Single Crystal, and Silicon Semiconductor Wafers with Determined Defect Distributions
Epitaxially Coated Silicon Wafer and Method for Producing Epitaxially Coated Silicon Wafer
Epitaxially Coated Silicon Wafer and Method for Producing Epitaxially Coated Silicon Wafers
Epitaxially Coated Silicon Wafer and Method for Producing Epitaxially Coated Silicon Wafers
Unpolished Semiconductor Wafer and Method for Producing an Unpolished Semiconductor Wafer
Annealed wafer and manufacturing method of annealed wafer
Epitaxial Wafer and Method for Producing Epitaxial Wafers
Semiconductor layer structure comprising a cavity layer and method for fabricating the semiconductor layer structure
Polished Semiconductor Wafer and Process for Producing It
Method and Apparatus for the Treatment of a Semiconductor Wafer
Method and Appartus for Detection of Mechanical Defects in an Ingot Piece Composed of Semiconductor Material
Sawing Strip and Method for Simultaneously Cutting Off a Multiplicity of Slices from a Cylindrical Workpiece Using a Sawing Strip
Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method for Producing It
Silicon Wafer for Semiconductor and Manufacturing Method Thereof
Process for Producing P-Doped and Epitaxially Coated Semiconductor Wafers from Silicon
Crystal Pulling Apparatus and Method for the Production of Heavy Crystals
Alkaline Etching Solution for Semiconductor Wafers and Alkaline Etching Method
Silicon Wafer Having Good Intrinsic Getterability and Method for Its Production
Method for Simultaneously Slicing at Least Two Cylindrical Workpieces into a Multiplicity of Wafers
Silicon Wafer and Method for Manufacturing the Same
Method for Slicing a Multiplicity of Wafers from a Workpiece
Epitaxially Coated Semiconductor Wafer and Device and Method for Producing an Epitaxially Coated Semiconductor Wafer
Semiconductor Wafers of Silicon and Method for Their Production
Soi Wafer and Method for Producing It
Layered Semiconductor Wafer with Low Warp and Bow, and Process for Producing It
Method for Reducing and Homogenizing the Thickness of a Semiconductor Layer Which Lies on the Surface of an Electrically Insulating Material
Semiconductor Wafer and Process for Its Production
Wire Guide Roll For Wire Saw and Method
Single Crystal Manufacturing Method
Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer
Method for Grinding Semiconductor Wafers
Semiconductor Wafer With An Epitaxially Deposited Layer, And Process For Producing The Semiconductor Wafer
Simultaneous Double-Side Grinding of Semiconductor Wafers
Semiconductor Substrate and Process for Producing It
Method for the Wet-Chemical Treatment of a Semiconductor Wafer
Semiconductor Wafer of Single Crystalline Silicon and Process for Its Manufacture
Method for producing an epitaxially coated semiconductor wafer
Semiconductor Wafer with a Heteroepitaxial Layer and a Method for Producing the Wafer
Crystal Pulling Apparatus and Method for the Production of Heavy Crystals
Epitaxially Coated Silicon Wafer and Method for Producing Epitaxially Coated Silicon Wafers
Method for Depositing a Layer on a Semiconductor Wafer by Means of Cvd and Chamber for Carrying Out the Method
Method for Polishing a Semiconductor Wafer
Method for Producing a Semiconductor Wafer
Semiconductor Wafer Composed of Monocrystalline Silicon and Method for Producing It
Device for Pulling a Single Crystal
Method for Simultaneously Cutting a Compound Rod of Semiconductor Material into a Multiplicity of Wafers
Cleaning method of semiconductor wafer
Process for the Preparation of Silicon Wafer with Reduced Slip and Warpage
Method for the Treatment of a Semiconductor Wafer
Micro Bubble Generating Device and Silicon Wafer Cleaning Apparatus
Silicon Wafer and Method of Manufacturing the Same
Epitaxially Coated Silicon Wafer and Method for Producing Epitaxially Coated Silicon Wafers
Silicon wafer and method for producing the same
Epitaxially Coated Silicon Wafer and Method for Producing an Epitaxially Coated Silicon Wafer
Method for Producing Epitaxially Coated Silicon Wafers
Method for Producing a Wafer Comprising a Silicon Single Crystal Substrate Having a Front and a Back Side and a Layer of Sige Deposited on the Front Side
Method For Pulling A Silicon Single Crystal
Methods for Producing and Processing Semiconductor Wafers
Method And An Apparatus For Growing A Silicon Single Crystal From A Melt
Methods For Producing Epitaxially Coated Silicon Wafers
SOI WAFERS HAVING Mx Oy OXIDE LAYERS ON A SUBSTRATE WAFER AND AN AMORPHOUS INTERLAYER ADJACENT THE SUBSTRATE WAFER
Method For Producing A Polished Semiconductor Wafer
Method for the Production of a Semiconductor Structure
Method for Grinding a Semiconductor Wafer
Epitaxial Wafer and Production Method Thereof
Method for Producing a Semiconductor Wafer
Graphite Crucible and Silicon Single Crystal Manufacturing Apparatus
Method for Pulling a Single Crystal Composed of Silicon with a Section Having a Diameter That Remains Constant
Silicon Wafer and Production Method Therefor
Silicon Wafer and Method for Producing the Same
Method for Producing Semiconductor Wafers Composed of Silicon Having a Diameter of at Least 450 Mm, and Semiconductor Wafer Composed of Silicon Having a Diameter of 450 Mm
Method for Slicing a Multiplicity of Wafers from a Crystal Composed of Semiconductor Material
Method for Producing a Semiconductor Wafer Composed of Silicon with an Epitaxially Deposited Layer
Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby
Method for Polishing a Semiconductor Wafer
Semiconductor Layer Structure and Method for Fabricating a Semiconductor Layer Structure
Method for Producing a Multiplicity of Semiconductor Wafers by Processing a Single Crystal
Method for Producing Semiconductor Wafers Composed of Silicon with Reduced Pinholes
Apparatus FOR WORKING THE LAYERS OF A DOUBLE-SIDE GRINDING APPARATUS
Silicon Single Crystal Production Method
Silicon Wafer and Method for Producing It
Semiconductor Wafers of Silicon and Method for Their Production
Monocrystalline Semiconductor Wafer Comprising Defect-Reduced Regions and Method for Producing It
Support Ring for Supporting a Semiconductor Wafer Composed of Monocrystalline Silicon During a Thermal Treatment, Method for the Thermal Treatment of Such a Semiconductor Wafer, and Thermally Treated Semiconductor Wafer Composed of Monocrystalline Silicon
Insert Carrier and Method for the Simultaneous Double-Side Material-Removing Processing of Semiconductor Wafers
Method for Cleaning a Semiconductor Wafer Composed of Silicon Directly After a Process of Polishing of the Semiconductor Wafer
Method for the Simultaneous Material-Removing Processing of Both Sides of at Least Three Semiconductor Wafers
Method For Recharging Raw Material Polycrystalline Silicon
Method for Cooling a Workpiece Made of Semiconductor Material During Wire Sawing
Method for Providing a Respective Flat Working Layer on Each of the Two Working Disks of a Double-Side Processing Apparatus
Method and Apparatus for Depositing a Material Layer Originating from Process Gas on a Substrate Wafer
Method for Slicing Wafers from a Workpiece
Method for Slicing Wafers from a Workpiece
Method for Cutting Workpiece with Wire Saw
Device and Method for Buffer-Storing a Multiplicity of Wafer-Type Workpieces
Ring-Shaped Resistance Heater For Supplying Heat To A Growing Single Crystal
Method for Polishing a Semiconductor Wafer
Patent:
44,986 →
Application:
13/553,133 →
Method and Apparatus For Depositing A Layer On A Semiconductor Wafer by Vapor Deposition In A Process Chamber
P-Type Silicon Single Crystal and Method Of Manufacturing The Same
Silicon Single Crystal Substrate and Method of Manufacturing the Same
Cleaning Apparatus, Measurement Method and Calibration Method
Method For The Treatment Of A Semiconductor Wafer
Method and Apparatus For Producing A Single Crystal
Apparatus and Method for Simultaneously Slicing a Multiplicity of Slices from a Workpiece
Silicon Wafer and Method Of Manufacturing The Same
Patent:
45,238 →
Application:
13/766,020 →
Method and an Apparatus for Growing a Silicon Single Crystal from a Melt
Ultrasonic Cleaning Method and Ultrasonic Cleaning Apparatus
Ultrasonic Cleaning Method and Ultrasonic Cleaning Apparatus
Method for Simultaneously Slicing a Multiplicity of Wafers from a Cylindrical Workpiece
Semiconductor Wafer Composed of Monocrystalline Silicon and Method for Producing It
Method of Manufacturing Silicon Single Crystal, Silicon Single Crystal, and Wafer
Method of Manufacturing Annealed Wafer
Dissolved Nitrogen Concentration Monitoring Method, Substrate Cleaning Method, and Substrate Cleaning Apparatus
Method for Resuming a Wire Sawing Process of a Workpiece After an Unplanned Interruption
Method for Polishing a Semiconductor Wafer
Layered Semiconductor Substrate with Reduced Bow Having a Group Iii Nitride Layer and Method for Manufacturing It
Method for Conditioning Polishing Pads for the Simultaneous Double-Side Polishing of Semiconductor Wafers
Method for Trimming the Working Layers of a Double-Side Grinding Apparatus
Apparatus for Trimming the Working Layers of a Double-Side Grinding Apparatus
Semiconductor Wafer with a Layerof ALZGA1-Zn and Process for Producing It
Method for Polishing Semiconductor Wafers by Means of Simultaneous Double-Side Polishing
Method for Controlling the Diameter of a Single Crystal to a Set Point Diameter
Method for Manufacturing Single-Crystal Silicon
Method for Manufacturing Single-Crystal Silicon
Device for Depositing a Layer on a Semiconductor Wafer by Means of Vapour Deposition
Device for Producing a Monocrystal by Crystallizing Said Monocrystal in a Melting Area
Method for the Double-Side Polishing of a Semiconductor Wafer
Method for Simultaneously Cutting a Multiplicity of Wafers from a Workpiece
Method for Slicing Wafers from a Workpiece by Means of a Wire Saw
Epitaxial Wafer and a Method of Manufacturing Thereof
Method for Slicing Wafers from a Workpiece Using a Sawing Wire
Method for Simultaneously Cutting a Multiplicity of Slices of Particularly Uniform Thickness from a Workpiece
Semiconductor Wafer Composed of Silicon and Method for Producing Same
Method For Monitoring The Operational State Of A Surface Inspection System For Detecting Defects On The Surface Of Semiconductor Wafers
Method Of Supporting A Growing Single Crystal During Crystallization Of The Single Crystal According To The FZ Method
Ultrasonic Cleaning Method
Method for Growing a Single Crystal by Crystallizing the Single Crystal from a Float Zone
Method for Depositing a Layer on a Semiconductor Wafer by Vapor Deposition in a Process Chamber
Method for Dressing Polishing Pads
Ultrasonic Cleaning Method
Susceptor for Holding a Semiconductor Wafer Having an Orientation Notch, a Method for Depositing a Layer on a Semiconductor Wafer, and Semiconductor Wafer
Epitaxially Coated Semiconductor Wafer, and Method for Producing an Epitaxially Coated Semiconductor Wafer
Semiconductor Wafer Comprising a Monocrystalline Group-Iiia Nitride Layer
Screen Plate for Screening Plants for Mechanical Classification of Polysilicon
Monocrystalline Semiconductor Wafer and Method for Producing a Semiconductor Wafer
Method for Producing a Semiconductor Wafer with Epitaxial Layer in a Deposition Chamber, Apparatus for Producing a Semiconductor Wafer with Epitaxial Layer, and Semiconductor Wafer with Epitaxial Layer
Semiconductor Wafer Made of Monocrystalline Silicon, and Method for Producing Same
Method for Determining and Regulating a Diameter of a Single Crystal During Pulling of the Single Crystal
Susceptor for Holding a Semiconductor Wafer Having an Orientation Notch, a Method for Depositing a Layer on a Semiconductor Wafer, and Semiconductor Wafer
Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer
Silicon Wafer with Homogeneous Radial Oxygen Variation
Method for the Vapour Phase Etching of a Semiconductor Wafer for Trace Metal Analysis
Method for Producing a Semiconductor Wafer of Monocrystalline Silicon, Device for Producing a Semiconductor Wafer of Monocrystalline Silicon and Semiconductor Wafer of Monocrystalline Silicon
Susceptor for Holding a Semiconductor Wafer, Method for Depositing an Epitaxial Layer on a Front Side of a Semiconductor Wafer, and Semiconductor Wafer with Epitaxial Layer
Method and Device for Producing Coated Semiconductor Wafers
Device for Handling a Semiconductor Wafer in an Epitaxy Reactor and Method for Producing a Semiconductor Wafer Having an Epitaxial Layer
Method for Pulling a Single Crystal Composed of Semiconductor Material from a Melt Contained in a Crucible
Method for Polishing a Semiconductor Wafer on Both Sides
Semiconductor Wafer Composed of Single-Crystal Silicon with High Gate Oxide Breakdown, and a Process for the Manufacture Thereof
Separating Apparatus for Polysilicon
Method for pulling a single crystal by the FZ method comprising dynamically adapting the power of a melting apparatus based on a position of lower and upper phase boundaries
Method for Pulling a Single Crystal by the Fz Method Comprising Reducing the Power of a Melting Apparatus Based on Geometrical Dimensions of the Drop
Method and Apparatus for Pulling a Single Crystal by the Fz Method
Wire Saw, Wire Guide Roll and Method for Simultaneously Cutting a Multiplicity of Wafers from an Ingot
Susceptor for Holding a Semiconductor Wafer with an Orientation Notch During the Deposition of a Layer on a Front Side of the Semiconductor Wafer and Method for Depositing the Layer by Using the Susceptor
Method, Control System and Plant for Processing a Semiconductor Wafer, and Semiconductor Wafer
Method, Control System, and System for Machining a Semiconductor Wafer, and Semiconductor Wafer
Semiconductor Wafer Made of Single-Crystal Silicon and Process for the Production Thereof
Epitaxially Coated Semiconductor Wafer of Monocrystalline Silicon and Method for Production Thereof
Semiconductor Wafer of Monocrystalline Silicon and Method of Producing the Semiconductor Wafer
Heteroepitaxial Wafer and Method for Producing a Heteroepitaxial Wafer
Single Crystal of Silicon with <100> Orientation, Which Is Doped with N-Type Dopant, and Method for Producing Such a Single Crystal
Semiconductor Wafer Composed of Monocrystalline Silicon
Application:
16/758,417 →
Publication:
US 2020/0248333
Method for Depositing an Epitaxial Layer on a Front Side of a Semiconductor Wafer and Device for Carrying Out the Method
Semiconductor Wafer Having Epitaxial Layer
Method for Polishing a Semiconductior Wafer
Application:
16/968,689 →
Publication:
US 2022/0080549
Process for Producing Semiconductor Wafers
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.