Epitaxial wafer and production method thereof
View Patent ↗The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×10 13 cm −3 to 3×10 14 cm −3 , preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.
1. A method for producing an epitaxial wafer comprising the following steps:
growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×10 13 cm −3 to 3×10 14 cm −3 , wherein the hydrogen is added to said silicon melt by growing said silicon crystal under an atmosphere with a hydrogen partial pressure of from 0.1 mbar to 0.4 mbar and wherein the cooling rate of said silicon crystal at 1100 to 1200° C. is equal to or higher than 3.5° C./minute,
preparing a silicon substrate by machining the silicon crystal, and
forming an epitaxial layer at the surface of the silicon substrate.
2. The method of claim 1 , wherein the number of bubble-like void aggregates having a plurality of irregular voids aggregated relative to the total number of voids existing in the silicon substrate is below 0.4.
3. An epitaxial wafer having an epitaxial layer formed at the surface of a silicon substrate wafer having a nitrogen concentration in the range of 3×10 13 cm −3 to 3×10 14 cm −3 , wherein the number of bubble-like void aggregates having a plurality of irregular voids aggregated relative to the total number of voids existing in the silicon substrate wafer is below 0.4.
4. The method of claim 1 , wherein the epitaxial layer is deposited directly following machining of the silicon wafer.
5. The method of claim 1 , wherein the nitrogen concentration is in the range of 5×10 13 cm −3 to 2×10 14 cm −3 .
6. The method of claim 1 , wherein the hydrogen partial pressure is from 0.1 mbar to 0.35 mbar.
7. The method of claim 5 , wherein the hydrogen partial pressure is from 0.1 mbar to 0.35 mbar.
8. The method of claim 1 , wherein the hydrogen partial pressure is from 0.2 mbar to 0.35 mbar.
9. The method of claim 1 , wherein the cooling rate of the silicon crystal at 1100° C. to 1150° C. is ≧3.5° C./minute.