Method for the production of a semiconductor structure
View Patent ↗Semiconductor structures are produced by providing a 3C—SiC semiconductor layer containing a monocrystalline 3C—SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity ≧80% or being substantially transparent.
1. A method for producing a semiconductor structure, comprising:
a) providing a 3C—SiC semiconductor layer structure containing an exposed, monocrystalline 3C—SiC layer generated by implantation of carbon in silicon on a silicon substrate,
b) applying an epitaxial layer of a gallium nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C—SiC semiconductor layer structure,
c) depositing an electrically conductive reflective metal film directly onto the gallium nitride compound semiconductor epitaxial layer to form a metal reflective film coated gallium nitride layer,
d) removing the silicon substrate and 3C—SiC layer; and
e) bonding the surface of the gallium nitride layer which formerly was in contact with the 3C—SiC layer onto a second substrate comprising a metal or metal alloy with a reflectivity greater than 80%, or onto a transparent or partially transparent substrate.
2. The method of claim 1 , further comprising adhesively bonding the reflective metal film coated gallium nitride layer to a carrier prior to removing the silicon substrate and 3C—SiC layer.
3. The method of claim 2 , wherein the carrier comprises a carrier wafer or carrier film.
4. The method of claim 2 , wherein the step of adhesively bonding employs an adhesive composition comprising a wax or a solvent-soluble resin.
5. The method of claim 2 , further comprising removing the adhesively bonded carrier wafer after step e).
6. The method of claim 1 , wherein the 3C—SiC semiconductor layer is generated by heat treatment of the silicon substrate after implantation of carbon ions to a depth in the silicon substrate, so that a buried monocrystalline layer of 3C—SiC is formed at a depth in the silicon wafer, subsequently removing the layers lying above the buried 3C—SiC layer until the 3C—SiC layer is exposed, and subsequently chemical-mechanical polishing the exposed surface of the monocrystalline 3C—SiC layer.
7. The method of claim 6 , wherein the exposed 3C—SiC layer is smoothed to a surface roughness of 0.05-0.5 nm RMS by the polishing.
8. The method of claim 1 , wherein the second substrate consists of a metal or a metal alloy.
9. The method of claim 8 , wherein the second substrate consists of a copper alloy.
10. The method of claim 1 , wherein the second substrate is a glass substrate.
11. The method of claim 1 , wherein the removal of the silicon and layers containing silicon carbide of the 3C—SiC layer structure is carried out by grinding, lapping, or polishing, by wet or dry chemical etching processes, or by a combination of mechanical and chemical removal.
12. The method of claim 1 , wherein the silicon substrate is a wafer of float zone-grown silicon material.
13. The method of claim 1 , wherein the silicon substrate is a wafer of Czochralski-grown silicon material.
14. The method of claim 1 , wherein the second substrate is transparent or partially transparent, with a transmission coefficient greater than 50%.
15. The method of claim 1 , wherein prior to adhesively bonding, the electrically conductive metal reflective layer is coated with a carbon layer film.