Silicon wafer having good intrinsic getterability and method for its production
View Patent ↗Silicon wafers in the entire volume of which crystal lattice vacancies are the prevalent point defect type, have a rotationally symmetric region whose width is at least 80% of the wafer radius, crystal lattice vacancy agglomerates of at least 30 nm in a density ≦6·10 3 cm −3 , crystal lattice vacancy agglomerates of from 10 nm to 30 nm in a density of 1·10 5 cm −3 to 3·10 7 cm −3 , OSF seeds in a density of 0 to 10 cm −2 , and an average bulk BMD density of 5·10 8 cm −3 to 5·10 9 cm −3 , which varies at most by a factor of 10 radially over the entire silicon wafer, and a BMD-free layer on the front side, wherein the first BMD is found at a depth of at least 5 μm and on average at a depth of at least 8 μm.
1. A silicon wafer, in the entire volume of which crystal lattice vacancies represent the prevalent point defect type, the silicon wafer having a region which is rotationally symmetric with respect to its axis and has a width of at least 80% of the radius of the silicon wafer, this region comprising agglomerates of crystal lattice vacancies with a size of at least 30 nm in a density of at most 6 10 3 cm −3 and agglomerates of crystal lattice vacancies with a size of from 10 nm to 30 nm in a density of from 1·10 5 cm −3 to 3·10 7 cm −3 , the silicon wafer comprising OSF seeds in a density of from 0 to 10 cm −2 and an average BMD density in its interior of from 5·10 4 cm −2 to 5·10 5 cm −2 , the BMD density varying at most by a factor of 10 in the radial direction over the entire radius of the silicon wafer, and wherein the silicon wafer comprises a BMD-free denuded zone layer at least on a front side of the silicon wafer, which is distinguished in that the first BMD on the entire front side of the silicon wafer is found at a depth of at least 5 μm and the first BMD is found on average at a depth of at least 8 μm.
2. The silicon wafer of claim 1 , which is not doped with nitrogen.
3. The silicon wafer claim 1 , wherein the total length of slips existing in the silicon wafer does not exceed 1 cm.
4. The silicon wafer of claim 1 , wherein the rotationally symmetric region covers the entire surface of the silicon wafer.
5. The silicon wafer claim 1 , comprising an OSF seed density of from 0 to 2 cm −2 .
6. The silicon wafer of claim 1 , comprising an interstitial oxygen concentration [O i ] in the range of from 4.2·10 17 cm −3 to 5.5·10 17 cm −3 .
7. The silicon wafer of claim 6 , comprising an interstitial oxygen concentration [O i ] in the range of from 4.2·10 17 cm −3 to 5.2·10 17 cm −3 .
8. A method for producing a silicon wafer of claim 1 , comprising the following steps:
a) preparing a silicon wafer having an interstitial oxygen concentration [O i ] in the range of from 4.5·10 17 cm −3 to 5.8·10 17 cm −3 , in the entire volume of which crystal lattice vacancies represent the prevalent point defect type, the silicon wafer having a region which is rotationally symmetric with respect to its axis and has a width of at least 80% of the radius of the silicon wafer, this region comprising agglomerates of crystal lattice vacancies with a size of at least 30 nm in a density of at most 6·10 3 cm −3 and agglomerates of crystal lattice vacancies with a size of from 10 nm to 30 nm in a density of from 1·10 5 cm −3 to 3·10 7 cm −3 ,
b) heat treating the silicon wafer in an inert or reducing atmosphere, wherein the silicon wafer is heated starting from a loading temperature of from 350° C. to 750° C. with a heating rate of 0.5 K/min to 8 K/min to a temperature of 1000° C., and further with a heating rate of from 0.1 K/min to 4 K/min until a holding temperature in the range of from 1025° C. to 1175° C. is reached, is subsequently kept at the holding temperature for a duration of from 1 hour to 4 hours, and is then cooled to an unloading temperature
wherein the silicon wafer thus produced, in the entire volume of which crystal lattice vacancies represent the prevalent point defect type, the silicon wafer having a region which is rotationally symmetric with respect to its axis and has a width of at least 80% of the radius of the silicon wafer, this region comprising agglomerates of crystal lattice vacancies with a size of at least 30 nm in a density of at most 6·10 3 cm −3 and agglomerates of crystal lattice vacancies with a size of from 10 nm to 30 nm in a density of from 1·10 5 cm −3 to 3·10 7 cm −3 , the silicon wafer comprising OSF seeds in a density of from 0to 10 cm −2 and an average BMD density in its interior of from 5·10 4 cm −2 to 5·10 5 cm −2, the BMD density varying at most by a factor of 10 in the radial direction over the entire radius of the silicon wafer, and wherein the silicon wafer comprises a BMD-free denuded zone layer at least on a front side of the silicon wafer, which is distinguished in that the first BMD on the entire front side of the silicon wafer is found at a depth of at least 5 μm and the first BMD is found on average at a depth of at least 8 μm.
9. The method of claim 8 , wherein the silicon wafer is not doped with nitrogen.
10. The method of claim 8 , wherein the silicon wafer has an interstitial oxygen concentration [O i ] in the range of from 4.5·10 17 cm −3 to 5.5·10 17 cm −3 before heat treatment.
11. The method of claim 8 , wherein the heating rate is from 0.5 K/min to 5 K/min in the temperature range up to at most 1000° C.
12. The method of claim 8 , wherein the holding temperature is in the range of from 1025° C. to 1125° C.
13. The method of claim 12 , wherein the holding temperature is in the range of from 1050° C. to 1100° C.
14. The method of claim 8 , wherein the silicon wafer is kept at the holding temperature for a duration of from 2 hours to 3 hours.
15. The method of claim 8 , wherein the claimed heat treatment is the sole heat treatment.
16. The method of claim 8 , wherein the heat treatment is carried out simultaneously on a multiplicity of silicon wafers in a batch oven.