Method for manufacturing single-crystal silicon
View Patent ↗Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied.
1. A method for manufacturing single-crystal silicon using a multi-pulling method for pulling up a plurality of pieces of single-crystal silicon from a material melt in an identical crucible within a chamber by a Czochralski method, the method comprising the steps of:
preparing said material melt in said crucible, wherein the crucible has a diameter of 24 inches or more, and a layer containing barium is formed on an inner wall of the crucible in an amount related to the diameter of the crucible such that the amount of barium is about 2.2×10 14 atoms·cm −2 for a crucible of 24 inch diameter, 5.4×10 13 atoms·cm −2 or more and 2.2×10 14 atoms·cm −2 or less for a crucible of 32 inch diameter, and 1.1×10 13 atoms·cm −2 or more and 5.4×10 13 atoms·cm −2 or less for a crucible of 40 inch diameter;
pulling up a single-crystal silicon from the material melt;
additionally charging a polycrystalline material into a material melt remaining after pulling up the single-crystal silicon and melting the polycrystalline material in the material melt while continuing heating of the material melt; and
pulling up a further single-crystal silicon from the material melt having had the polycrystalline material additionally charged and melted therein, wherein
the step of additionally charging and melting the polycrystalline material and the step of pulling up the further single-crystal silicon are repeated one or more times, wherein
in at least one of the steps of pulling up a single-crystal silicon or the step of pulling up a further single-crystal silicon, which is repeated one or more times, the single-crystal silicon is grown in a magnetic field.
2. The method for manufacturing single-crystal silicon of claim 1 , wherein
at least one of the steps of pulling up a single-crystal silicon or the step of pulling up a further single-crystal silicon, which is repeated one or more times, includes a step of omitting at least a part of formation of a tail part of the single-crystal silicon and separating the single-crystal silicon from the material melt.
3. The method for manufacturing single-crystal silicon using a multi-pulling method of claim 1 , wherein the crucible selected a is 32 inch nominal diameter crucible having a layer containing barium on the inner wall of the crucible in an amount of from ≧5.4×10 13 atoms·cm −2 to ≦2.2×10 14 atoms·cm −2 .
4. The method for manufacturing single-crystal silicon using a multi-pulling method of claim 1 , wherein the crucible selected is a 40 inch nominal diameter crucible having a layer containing barium on the inner wall of the crucible in an amount of from ≧1.1×10 13 atoms·cm −2 to ≦5.4×10 13 atoms·cm −2 .
5. The method for manufacturing single-crystal silicon using a multi-pulling method of claim 1 , wherein the layer containing barium is prepared by spraying an aqueous solution of a barium salt onto the inside of the previously formed crucible.
6. The method of claim 5 , wherein the aqueous solution of a barium salt is an aqueous solution of barium carbonate or barium hydroxide.
7. The method of claim 5 , wherein the aqueous solution of a barium salt is an aqueous solution of barium hydroxide.
8. The method of claim 5 , wherein the amount of barium is varied at different portions of the inner crucible walls by varying the amount of the aqueous solution of barium salt sprayed onto the inside of the crucible at different portions of the inner crucible walls.